FGH12040WD-F155

IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. www.onsemi.com C Features • • • • • • • Maximum Junction Temperature: TJ =175°C Positive Temperature Co−efficient for Easy Parallel Operating Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A 100% of the Parts Tested for ILM (Note 1) Short Circuit Ruggedness > 5 us @ 150°C High Input Impedance This Device is Pb−Free and is RoHS Compliant G E E Applications C G • Only for Welder TO−247 long leads CASE 340CH MARKING DIAGRAM $Y&Z&3&K FGH12040 WD $Y &Z &3 &K FGH12040WD = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2020 − Rev. 4 1 Publication Order Number: FGH12040WD−F155/D FGH12040WD ABSOLUTE MAXIMUM RATINGS Symbol FGH75T65SHDTL4 Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V TC = 25°C 80 A TC = 100°C 40 A TC = 25°C 100 A 100 A IC Description Collector Current ILM (Note 1) Clamped Inductive Load Current ICM (Note 2) Pulsed Collector Current IF IFM(Note 2) Diode Continuous Forward Current TC = 25°C 80 A Diode Continuous Forward Current TC = 100°C 40 A 100 A 5 us Diode Maximum Forward Current SCWT(Note 3) Short Circuit Withstand Time TC = 150°C PD Maximum Power Dissipation TC = 25°C 428 W TC = 100°C 214 W Operating Junction Temperature −55 to +175 °C Storage Temperature Range −55 to +175 °C 300 °C TJ TSTG TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 600 V, VGE = 15 V, IC = 100 A, RG = 23 , Inductive Load. 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. VCC = 600 V, VGE = 12 V THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SHDTL4 Unit RJC (IGBT) Thermal Resistance, Junction to Case 0.35 _C/W RJC (Diode) Thermal Resistance, Junction to Case 1.4 _C/W Thermal Resistance, Junction to Ambient 40 _C/W RJA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH12040WD−F155 FGH12040WD TO−247 Tube − − 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit VGE = 0 V, IC = 250 uA 1200 − − V VGE = 0 V, IC = 250 uA − 1.2 − V/°C OFF CHARACTERISTICS BVCES Collector to Emitter Breakdown Voltage  BVCES /  TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut−Off Current VCE = VCES, VGE = 0 V − − 250 uA IGES G−E Leakage Current VGE = VGES, VCE = 0 V − − ±400 nA www.onsemi.com 2 FGH12040WD ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit ON CHARACTERISTICS VGE(th) G−E Threshold Voltage IC = 40 mA, VCE = VGE 4.8 6.4 8.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40 A, VGE = 15 V, TC = 25°C − 2.3 2.9 V IC = 40 A, VGE = 15 V, TC = 175°C − 2.7 − V VCE = 30 V, VGE = 0 V, f = 1 MHz − 2800 − pF − 105 − pF − 60 − pF − 45 − ns − 70 − ns Turn−Off Delay Time − 560 − ns Fall Time − 15 − ns Eon Turn−On Switching Loss − 4.1 − mJ Eoff Turn−Off Switching Loss − 1.0 − mJ Ets Total Switching Loss − 5.1 − mJ Td(on) Turn−On Delay Time − 43 − ns − 73 − ns Turn−Off Delay Time − 572 − ns Fall Time − 58 − ns Eon Turn−On Switching Loss − 6.9 − mJ Eoff Turn−Off Switching Loss − 1.9 − mJ Ets Total Switching Loss − 8.8 − mJ Qg Total Gate Charge − 226 − nC Qge Gate to Emitter Charge − 18 − nC Qgc Gate to Collector Charge − 155 − nC DYNAMIC CHARACTERISTICS Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Td(on) Tr Td(off) Tf Tr Td(off) Tf Turn−On Delay Time Rise Time Rise Time VCC = 600 V, IC = 40 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 25°C VCC = 600 V, IC = 40 A, RG = 23 , VGE = 15 V, Inductive Load, TC = 175°C VCE = 600 V, IC = 40 A, VGE = 15 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 FGH12040WD ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted) Symbol VFM Parameter Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Erec Reverse Recovery Energy Test Conditions IF = 40 A Min Typ Max Unit TC = 25°C − 3.6 4.7 V TC = 175°C − 2.9 − − 71 − ns − 6.8 − A − 242 − nC − 690 − uJ − 500 − ns VR = 600 V, IF = 40 A, dIF/dt = 200 A/us, TC = 25°C VR = 600 V, IF = 40 A, dIF/dt = 200 A/s, TC = 175°C trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current − 17 − A Qrr Diode Reverse Recovery Charge − 4250 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 FGH12040WD TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE www.onsemi.com 5 FGH12040WD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics Figure 9. Turn−on Characteristics vs. Gate Resistance Figure 10. Turn−off Characteristics vs. Gate Resistance Figure 11. Switching Loss vs. Gate Resistance Figure 12. Turn−on Characteristics vs. Collector Current www.onsemi.com 6 FGH12040WD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Figure 13. Turn−off Characteristics vs. Collector Current Figure 14. Switching Loss vs. Collector Current Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current www.onsemi.com 7 FGH12040WD TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Figure 19. Reverse Recovery Time Figure 20. Stored Charge PDM t1 t2 Figure 21. Transient Thermal Impedance of IGBT PDM t1 Figure 22. Transient Thermal Impedance of Diode www.onsemi.com 8 t2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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