FJN3303FTA

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FJN3303F High Voltage Fast-Switching NPN Power Transistor Features • • • • High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Green packaging TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) * 3 A IB Base Current (DC) 0.75 A IBP Base Current (Pulse) * 1.5 A TJ Junction Temperature 150 °C -65 to +150 °C Value Units 1.1 650 W mW TSTG Storage Temperature range * Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Parameter Total Device Dissipation TC = 25°C TA = 25°C RθJC Thermal Resistance Junction-Case 48 °C/W RθJA Thermal Resistance Junction-Ambient 190 °C/W Ordering Information Part Number Marking Info. Package Packing Method Remarks FJN3303FBU J3303F TO-92 (Straight) BULK Green EMC FJN3303FTA J3303F TO-92 (Form) AMMO Green EMC © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 1 FJN3303F — High Voltage Fast-Switching NPN Power Transistor December 2009 Symbol TA = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 700 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 ICBO Collector Cut-off Current VCB = 700V, IE = 0 10 μA IEBO Emitter Cut-off Current VEB = 9V, IC = 0 10 μA hFE1 hFE2 DC Current Gain VCE = 2V, IC = 0.5A VCE = 2V, IC = 1.0A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A IC = 1.5A, IB = 0.5A 0.5 1.0 3.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A IC = 1.0A, IB = 0.25A 1.0 1.2 V V fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time VCC = 125V, IC = 1A IB1 = - IB2 = -0.2A RL = 125Ω tF Fall Time © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 9 14 5 V 23 4 MHz 1.1 μs 4.0 μs 0.7 μs www.fairchildsemi.com 2 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Figure 1. Static Characteristic Figure 2. DC Current Gain 100 1.6 VCE = 2V 1.4 o TA = 75 C o 1.2 hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT TA = 125 C IB = 120 mA 1.0 0.8 IB = 40 mA 0.6 IB = 20 mA 0.4 o TA = - 25 C o TA = 25 C 10 0.2 1 1E-3 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 o TA = 75 C VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE o TA = 125 C IC = 4 IB o TA = 25 C 1 o TA = - 25 C 0.1 0.01 0.01 0.1 1 IC = 4 I B o 1 o TA = - 25 C o o TA = 125 C 0.1 0.01 10 TA = 25 C TA = 75 C 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time 10 tSTG & tF [μs], SWITCHING TIME tSTG & tF [μs], SWITCHING TIME 10 tSTG 1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 tF 0.1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 tSTG www.fairchildsemi.com 3 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 10 IC (DC) IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 10 1 0.1 0.01 o TC = 25 C Single Pulse 1E-3 0.1 1 10 100 1 IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.1 100 1000 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating PC [W], COLLECTOR POWER DISSIPATION 1.4 1.2 1.0 o TA = 25 C 0.8 o TC = 25 C 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 175 o TA [ C], AMBIENT TEMPERATURE © 2009 Fairchild Semiconductor Corporation FJN3303F Rev. A1 www.fairchildsemi.com 4 FJN3303F — High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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