DATA SHEET
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3 A Output Current, High
Speed MOSFET Gate Driver
Optocoupler
FOD3182
PDIP8 6.6x3.81, 2.54P
CASE 646BW
8
1
PDIP8 9.655x6.61, 2.54P
CASE 646CQ
8
1
Description
The FOD3182 is a 3 A Output Current, High Speed MOSFET Gate
Drive Optocoupler. It consists of a aluminium gallium arsenide
(AlGaAs) light emitting diode optically coupled to a CMOS detector
with PMOS and NMOS output power transistors integrated circuit
power stage. It is ideally suited for high frequency driving of power
MOSFETS used in Plasma Display Panels (PDPs), motor control
inverter applications and high performance DC/DC converters.
The device is packaged in an 8−pin dual in−line housing compatible
with 260°C reflow processes for lead free solder compliance.
PDIP8 GW
CASE 709AC
8
1
PDIP8 GW
CASE 709AD
8
1
MARKING DIAGRAM
Features
• High Noise Immunity Characterized by 50 kV/ms (Typ.) Common
Mode Rejection @ VCM = 2,000 V
• Guaranteed Operating Temperature Range of −40°C to +100°C
• 3 A Peak Output Current
• Fast Switching Speed
♦ 210 ns Max. Propagation Delay
♦ 65 ns Max. Pulse Width Distortion
• Fast Output Rise/Fall Time
• Offers Lower Dynamic Power Dissipation
• 250 kHz Maximum Switching Speed
• Wide VDD Operating Range: 10 V to 30 V
• Use of P−Channel MOSFETs at Output Stage Enables Output
Voltage Swing Close to the Supply Rail (Rail−to−Rail Output)
• 5000 Vrms, 1 Minute Isolation
• Under Voltage Lockout Protection (UVLO) with Hysteresis –
Optimized for Driving MOSFETs
• Minimum Creepage Distance of 8.0 mm
• Minimum Clearance Distance of 10 mm to 16 mm (Option TV or
TSV)
• Minimum Insulation Thickness of 0.5 mm
• UL and VDE*
• 1,414 Peak Working Insulation Voltage (VIORM)
*Requires “V” Ordering Option
ON
3182
VXXYYB
3182 = Device Number
V
= VDE Mark (Note: Only appears on parts
ordered with DIN EN/IEC 60747−5−2 option − See
ordering table)
XX
= Two Digit Year Code, e.g., “11”
YY
= Digit Work Week Ranging from “01” to “53”
B
= Assembly Package Code
FUNCTIONAL BLOCK DIAGRAM
NC
1
8
VDD
ANODE
2
7
VO2
CATHODE
3
6
VO1
NC
4
5
VSS
NOTE:
A 0.1 mF bypass capacitor must be
connected between pins 5 and 8.
Applications
•
•
•
•
•
Plasma Display Panel
High Performance DC/DC Convertor
High Performance Switch Mode Power Supply
High Performance Uninterruptible Power Supply
Isolated Power MOSFET Gate Drive
© Semiconductor Components Industries, LLC, 2010
September, 2021 − Rev. 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 16 of
this data sheet.
1
Publication Order Number:
FOD3182/D
FOD3182
TRUTH TABLE
LED
VDD – VSS “Positive Going” (Turn−on)
VDD – VSS “Negative Going” (Turn−off)
VO
Off
0 V to 30 V
0 V to 30 V
Low
On
0 V to 7.4 V
0 V to 7 V
Low
On
7.4 V to 9 V
7 V to 8.5 V
Transition
On
9 V to 30 V
8.5 V to 30 V
High
PIN DEFINITIONS
Pin No.
Name
1
NC
2
Anode
3
Cathode
Description
Not Connected
LED Anode
LED Cathode
4
NC
Not Connected
5
VSS
Negative Supply Voltage
6
VO2
Output Voltage 2 (internally connected to VO1)
7
VO1
Output Voltage 1
8
VDD
Positive Supply Voltage
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−2. This optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Min.
Typ.
Max.
−
I–IV
−
For Rated Mains Voltage < 300 Vrms
−
I–IV
−
For Rated Mains Voltage < 450 Vrms
−
I–III
−
For Rated Mains Voltage < 600 Vrms
−
I–III
−
For Rated Mains Voltage < 1000 Vrms (Option T, TS)
Symbol
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150 Vrms
−
I–III
−
Climatic Classification
−
40/100/21
−
Pollution Degree (DIN VDE 0110/1.89)
−
2
−
Unit
CTI
Comparative Tracking Index
175
−
−
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test with tm = 1 second,
Partial Discharge < 5 pC
2651
−
−
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 seconds,
Partial Discharge < 5 pC
2121
−
−
VIORM
Max Working Insulation Voltage
1,414
−
−
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
−
−
Vpeak
External Creepage
8
−
−
mm
External Clearance
7.4
−
−
mm
10.16
−
−
mm
Insulation Thickness
0.5
−
−
mm
Safety Limit Values – Maximum Values Allowed in the Event of a Failure
Case Temperature
150
−
−
°C
Input Current
25
−
−
mA
Output Power (Duty Factor ≤ 2.7%)
250
−
−
mW
Insulation Resistance at TS, VIO = 500 V
109
−
−
W
External Clearance (for Option T or TS − 0.4” Lead Spacing)
TCase
IS,INPUT
PS,OUTPUT
RIO
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2
FOD3182
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Value
Unit
TSTG
Storage Temperature
−40 to +125
°C
TOPR
Operating Temperature
−40 to +100
°C
Junction Temperature
−40 to +125
°C
260 for 10 seconds
°C
TJ
TSOL
Parameter
Lead Solder Temperature – Wave Solder (Refer to Reflow Temperature Profile, page 15)
IF(AVG)
Average Input Current (Note 1)
25
mA
IF(tr, tf)
LED Current Minimum Rate of Rise/Fall
250
ns
Reverse Input Voltage
5
V
IOH(PEAK)
“High” Peak Output Current (Note 2)
3
A
IOL(PEAK)
“Low” Peak Output Current (Note 2)
3
A
VDD – VSS
Supply Voltage
−0.5 to 35
V
VO(PEAK)
Output Voltage
0 to VDD
V
VR
PO
Output Power Dissipation (Note 3)
250
mW
PD
Total Power Dissipation (Note 4)
295
mW
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Derate linearly above +79°C free air temperature at a rate of 0.37mA/°C.
2. Maximum pulse width = 10 ms, maximum duty cycle = 11%.
3. Derate linearly above +79°C, free air temperature at the rate of 5.73 mW/°C.
4. No derating required across operating temperature range.
RECOMMENDED OPERATING CONDITIONS
Symbol
Value
Unit
Power Supply
10 to 30
V
IF(ON)
Input Current (ON)
10 to 16
mA
VF(OFF)
Input Voltage (OFF)
−3.0 to 0.8
V
VDD – VSS
Parameter
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
FOD3182
ELECTRICAL−OPTICAL CHARACTERISTICS (DC) (Apply over all recommended conditions, typical value is measured at
VDD = 30 V, VSS = 0 V, TA = 25°C, unless otherwise specified.)
Symbol
IOH
Parameter
High Level Output Current
Test Conditions
Min
Typ
Max
Unit
VOH = (VDD – VSS – 1 V)
0.5
0.9
−
A
VOH = (VDD – VSS – 6 V)
2.5
−
−
VOL = (VDD – VSS + 1 V)
0.5
1
−
IOL
Low Level Output Current
2.5
−
−
VOH
High Level Output Voltage (Note 5, 6)
IO = −100 mA
VDD – 0.5
−
−
V
VOL
Low Level Output Voltage (Note 5, 6)
IO = 100 mA
−
−
VSS + 0.5
V
IDDH
High Level Supply Current
Output Open, IF = 10 to 16 mA
−
2.6
4.0
mA
IDDL
Low Level Supply Current
Output Open, VF = −3.0 to 0.8 V
−
2.5
4.0
mA
IFLH
Threshold Input Current Low to High
IO = 0 mA, VO > 5 V
−
3.0
7.5
mA
VFHL
Threshold Input Voltage High to Low
IO = 0 mA, VO < 5 V
0.8
−
−
V
Input Forward Voltage
IF = 10 mA
1.1
1.43
1.8
V
DVF / TA
Temperature Coefficient of Forward Voltage
IF = 10 mA
−
−1.5
−
mV/°C
VUVLO+
UVLO Threshold
VO > 5V, IF = 10 mA
7
8.3
9
V
VO < 5V, IF = 10 mA
6.5
7.7
8.5
V
−
0.6
−
V
VOL = (VDD – VSS + 6 V)
VF
VUVLO–
UVLOHYST
UVLO Hysteresis
A
BVR
Input Reverse Breakdown Voltage
IR = 10 mA
5
−
−
V
CIN
Input Capacitance
f = 1 MHz, VF = 0 V
−
25
−
pF
5. In this test, VOH is measured with a dc load current of 100 mA. When driving capacitive load VOH will approach VDD as IOH approaches zero
amps.
6. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
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FOD3182
SWITCHING CHARACTERISTICS (Apply over all recommended conditions, typical value is measured at VDD = 30 V, VSS = 0 V,
TA = 25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
tPLH
Propagation Delay Time to High Output Level (Note 7)
tPHL
Propagation Delay Time to Low Output Level (Note 7)
PWD
Pulse Width Distortion (Note 8)
IF = 10 mA, Rg = 10 W,
f = 250 kHz,
Duty Cycle = 50%,
Cg = 10 nF
PDD
Propagation Delay Difference Between Any Two Parts
(tPHL – tPLH) (Note 9)
tr
Rise Time
tf
CL = 10 nF, Rg = 10 W
Min
Typ
Max
Unit
50
120
210
ns
50
145
210
ns
−
35
65
ns
−90
−
90
ns
−
38
−
ns
Fall Time
−
24
−
ns
tUVLO ON
UVLO Turn On Delay
−
2.0
−
ms
tUVLO OFF
UVLO Turn Off Delay
−
0.3
−
ms
| CMH |
Output High Level Common Mode Transient Immunity
(Note 10, 11)
TA = +25°C, If = 7 mA to
16 mA, VCM = 2 kV,
VDD = 30 V
35
50
−
kV/ms
| CML |
Output Low Level Common Mode Transient Immunity
(Note 10, 12)
TA = +25°C, Vf = 0 V,
VCM = 2 kV, VDD = 30 V
35
50
−
kV/ms
7. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO
signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the
VO signal.
8. PWD is defined as | tPHL – tPLH | for any given device.
9. The difference between tPHL and tPLH between any two FOD3182 parts under same operating conditions, with equal loads.
10. Pin 1 and 4 need to be connected to LED common.
11. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output
will remain in the high state (i.e. VO > 15 V).
12. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output
will remain in a low state (i.e. VO < 1.0 V).
INSULATION CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ*
Max
Unit
5000
−
−
Vrms
VISO
Withstand Isolation Voltage (Note 13, 14)
TA = 25°C, R.H. < 50%,
t = 1 minute, II−O ≤ 10 mA
RI−O
Resistance (Input to Output) (Note 14)
VI−O = 500 V
−
1011
−
W
CI−O
Capacitance (Input to Output)
Freq. = 1 MHz
−
1
−
pF
*Typical values at TA = 25°C
13. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000 Vrms, 60 Hz for 1 second (leakage
detection current limit II−O < 10 mA).
14. Device considered a two−terminal device: pins on input side shorted together and pins on output side shorted together.
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FOD3182
0.5
(VOH − VDD), HIGH OUTPUT VOLTAGE DROP (V)
(VOH − VDD), HIGH OUTPUT VOLTAGE DROP (V)
TYPICAL PERFORMANCE CURVES
Frequency = 200 Hz
Duty Cycle = 0.1%
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
VSS = 0 V
0
−0.5
−1.0
TA = −40°C
−1.5
−2.0
TA = 25°C
−2.5
−3.0
−3.5
TA =100°C
0
0.5
1.0
1.5
2.0
IOH, OUTPUT HIGH CURRENT (A)
2.5
Figure 1. Output High Voltage Drop vs. Output
High Current
VO = 6 V
VO = 3 V
2
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
3
−0.30
−40
6
TA =100°C
TA = 25°C
TA = −40°C
0.5
1.0
1.5
2.0
IOL, OUTPUT LOW CURRENT (A)
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
Frequency = 200 Hz
Duty Cycle = 0.5%
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
VO = 6 V
4
VO = 3 V
2
0.30
1
0
−0.25
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
Figure 4. Output High Current vs. Ambient
Temperature
2
0
−0.20
0
−40
VOL, OUTPUT LOW VOLTAGE (V)
VOL, OUTPUT LOW VOLTAGE (V)
Frequency = 200 Hz
Duty Cycle = 99.9%
VF(off) = 0.8 V
VDD = 15 V to 30 V
VSS = 0 V
−0.15
100
Figure 3. Output High Current vs. Ambient
Temperature
4
−0.10
8
4
0
−40
VDD = 15 V to 30 V
VSS = 0 V
IF = 10 mA to 16 mA
IO = −100 mA
Figure 2. Output High Voltage Drop vs. Ambient
Temperature
Frequency = 200 Hz
Duty Cycle = 0.2%
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
6
−0.05
IOH, OUTPUT HIGH CURRENT (A)
IOH, OUTPUT HIGH CURRENT (A)
8
0.00
0.25
0.20
0.15
0.10
0.05
0
−40
2.5
Figure 5. Output Low Voltage vs. Output Low
Current
VDD = 15 V to 30 V
VSS = 0 V
VF = −3 V to 0.8 V
IO = 100 mA
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Output Low Voltage vs. Ambient
Temperature
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6
100
FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
6
8
Frequency = 200 Hz
Duty Cycle = 99.8%
VF = 0.8 V
VDD = 15 V to 30 V
IOL, OUTPUT LOW CURRENT (A)
IOL, OUTPUT LOW CURRENT (A)
8
VO = 6 V
4
VO = 3 V
2
0
−40
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
IDD, SUPPLY CURRENT (mA)
IDD, SUPPLY CURRENT (mA)
IDDH (30 V)
IDDL (30 V)
2.8
2.6
2.4
2.2
−40
IDDH (15 V)
IDDL (15 V)
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
100
IF = 0 mA (for IDDL)
IF = 10 mA (for IDDH)
VSS = 0 V
TA = 25°C
3.2
2.8
IDDH
IDDL
2.4
15
20
25
VDD, SUPPLY VOLTAGE (V)
30
250
VDD = 15 V to 30 V
VSS = 0 V
Output = Open
tP, PROPAGATION DELAY (ns)
IFLH, LOW−to−HIGH INPUT CURRENT
THRESHOLD (mA)
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 10. Supply Current vs. Supply Voltage
3.6
3.2
3.0
2.8
2.6
2.4
2.2
−40
2
2.0
100
Figure 9. Supply Current vs. Ambient
Temperature
3.4
VO = 3 V
3.6
VDD = 15 V to 30 V
VSS = 0 V
IF = 0 mA (for IDDL)
IF = 10 mA (for IDDH)
3.0
VO = 6 V
4
Figure 8. Output Low Current vs. Ambient
Temperature
3.6
3.2
6
0
−40
100
Figure 7. Output Low Current vs. Ambient
Temperature
3.4
Frequency = 200 Hz
Duty Cycle = 99.5%
VF = 0.8 V
VDD = 15 V to 30 V
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
200
150
tPHL
tPLH
100
50
100
Figure 11. Low−to High Input Current Threshold
vs. Ambient Temperature
IF = 10 mA to 16 mA
TA = 25°C
RG = 10 W
CG = 10 nF
Duty Cycle = 50%
Frequency = 250 kHz
15
18
21
24
27
VDD, SUPPLY VOLTAGE (V)
30
Figure 12. Propagation Delay vs. Supply Voltage
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FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
450
VDD = 15 V to 30 V
TA = 25°C
RG = 10 W
CG = 10 nF
Duty Cycle = 50%
Frequency = 250 kHz
200
tP, PROPAGATION DELAY (ns)
tP, PROPAGATION DELAY (ns)
250
tPHL
150
tPLH
100
50
6
8
10
12
14
IF, FORWARD LED CURRENT (A)
tP, PROPAGATION DELAY (ns)
tP, PROPAGATION DELAY (ns)
tPHL
tPLH
0
10
20
30
40
RG, SERIES LOAD RESISTANCE (W)
IF, FORWARE CURRENT (mA)
VO, OUTPUT VOLTAGE (V)
20
15
10
5
0
1
2
3
4
IF, FORWARD LED CURRENT (mA)
100
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
RG = 10 W
Duty Cycle = 50%
Frequency = 250 kHz
350
250
tPHL
150
tPLH
0
20
40
60
80
CG, SERIES LOAD CAPACITANCE (nF)
100
100
25
0
−20
0
20
40
60
80
TA, AMBIENT TEMPERATURE (°C)
Figure 16. Propagation Delay vs. Series Load
Capacitance
VDD = 30 V
TA = 25°C
30
tPLH
50
50
Figure 15. Propagation Delay vs. Series Load
Resistance
35
tPHL
150
450
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
CG = 10 nF
Duty Cycle = 50%
Frequency = 250 kHz
250
50
250
Figure 14. Propagation Delay vs. Ambient
Temperature
450
150
350
50
−40
18
Figure 13. Propagation Delay vs. LED Forward
Current
350
IF = 10 mA to 16 mA
VDD = 15 V to 30 V
RG = 10 W
CG = 10 nF
Duty Cycle = 50%
Frequency = 250 kHz
10
1
0.1
0.001
5
Figure 17. Transfer Characteristics
TA = 100°C
0.01
0.6
25°C
−40°C
0.8
1.0
1.2
1.4
1.6
VR, FORWARE VOLTAGE (V)
1.8
Figure 18. Input Forward Current vs. Forward
Voltage
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FOD3182
TYPICAL PERFORMANCE CURVES (Continued)
20
VO, OUTPUT VOLTAGE (V)
18
16
14
12
10
8
6
4
2
0
0
5
10
15
(VDD − VSS), SUPPLY VOLTAGE (V)
Figure 19. Under Voltage Lockout
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20
FOD3182
TEST CIRCUIT
+
C1
0.1 mF
+
C2
47 mF
Power Supply
VDD = 10 V to 30 V
Pulse Generator
PW = 4.99 ms
Period = 5 ms
ROUT = 50 W
1
8
2
7
3
6
Pulse−In
R2
100 W
Iol
D1
VOL
LED−IFmon
4
5
R1
100 W
+
C3
0.1 mF
+
C4
47 mF
Power Supply
V=6V
To Scope
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 99.8%
VDD = 10 V to 30 V
VSS = 0 V
VF(OFF) = −3.0 V to 0.8 V
Figure 20. IOL Test Circuit
+
C1
0.1 mF
+
Power Supply
VDD = 10 V to 30 V
C2
47 mF
Pulse Generator
PW = 10 ms
Period = 5 ms
ROUT = 50 W
1
8
2
7
Pulse−In
R2
100 W
Ioh
6
3
VOH
LED−IFmon
4
5
R1
100 W
Test Conditions:
Frequency = 200 Hz
Duty Cycle = 0.2%
VDD = 10 V to 30 V
VSS = 0 V
IF = 10 mA to 16 mA
Figure 21. IOH Test Circuit
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10
D1
Current
Probe
+
C3
0.1 mF
To Scope
+
C4
47 mF
Power Supply
V=6V
–
FOD3182
TEST CIRCUIT (Continued)
1
8
2
7
0.1 mF
+
–
IF = 10 to 16 mA
3
VDD = 10 to 30 V
VO
6
100 mA
5
4
Figure 22. VOH Test Circuit
1
8
2
7
3
6
4
5
100 mA
+
– VDD = 10 to 30 V
0.1 mF
VO
Figure 23. VOL Test Circuit
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FOD3182
TEST CIRCUIT (Continued)
1
8
2
7
0.1 mF
IF = 10 to 16 mA
3
6
4
5
+
–
VDD = 30 V
+
–
VDD = 30 V
VO
Figure 24. IDDH Test Circuit
+
– VF = −0.3 to 0.8 V
1
8
2
7
3
6
4
5
0.1 mF
Figure 25. IDDL Test Circuit
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VO
FOD3182
TEST CIRCUIT (Continued)
IF
1
8
2
7
3
6
4
5
0.1 mF
+
–
VDD = 10 to 30 V
VO > 5 V
Figure 26. IFLH Test Circuit
+
–
1
8
2
7
3
6
4
5
0.1 mF
+
– VDD = 10 to 30 V
VF = −0.3 to 0.8 V
VO
Figure 27. IFHL Test Circuit
1
8
2
7
0.1 mF
IF = 10 mA
3
6
4
5
Figure 28. UVLO Test Circuit
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13
VO = 5 V
+
–
10 to 30 V
VDD Ramp
FOD3182
TEST CIRCUIT (Continued)
1
8
2
7
0.1 mF
+
–
F = 250 kHz Probe
DC = 50%
50 W
3
VO
+
–
VDD = 10 to 30 V
Rg = 10 W
6
Cg = 10 nF
5
4
IF
tr
tf
90%
50%
VOUT
10%
tPHL
tPLH
Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms
IF
A
B
5V +
–
1
8
2
7
3
6
4
5
0.1 mF
+
–
VDD = 30 V
VO
+−
VCM = 2,000 V
VCM
0V
Dt
VO
VOH
Switch at A: I F = 10 mA
VO
VOL
Switch at B: I F = 0 mA
Figure 30. CMR Test Circuit and Waveforms
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14
FOD3182
REFLOW PROFILE
260
240
220
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
tP
TL
200
Tsmax
Temperature (_C)
160
140
tL
Preheat Area
180
Tsmin
ts
120
100
80
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 31. Reflow Profile
Table 1.
Profile Freature
Pb−Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp−up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp−down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
8 minutes max.
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15
FOD3182
ORDERING INFORMATION
Package
Shipping†
FOD3182
PDIP8 9.655x6.61, 2.54P
DIP 8−Pin
50 Units / Tube
FOD3182S
PDIP8 GW
SMT 8−Pin (Lead Bend)
50 Units / Tube
FOD3182SD
PDIP8 GW
SMT 8−Pin (Lead Bend)
1,000 / Tape and Reel
PDIP8 9.655x6.61, 2.54P
DIP 8−Pin, IEC60747−5−2 option
50 Units / Tube
FOD3182SV
PDIP8 GW
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−2 option
50 Units / Tube
FOD3182SDV
PDIP8 GW
SMT 8−Pin (Lead Bend), DIN EN/IEC 60747−5−2 option
1,000 / Tape and Reel
FOD3182TV
PDIP8 6.6x3.81, 2.54P
DIP 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
50 Units / Tube
FOD3182TSV
PDIP8 GW
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
50 Units / Tube
PDIP8 GW
SMT 8−Pin, 0.4” Lead Spacing
700 / Tape and Reel
PDIP8 GW
SMT 8−Pin, 0.4” Lead Spacing, DIN EN/IEC 60747−5−2 option
700 / Tape and Reel
Part Number
FOD3182V
FOD3182TSR2
FOD3182TSR2V
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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16
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 6.6x3.81, 2.54P
CASE 646BW
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13445G
PDIP8 6.6X3.81, 2.54P
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 9.655x6.6, 2.54P
CASE 646CQ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13446G
PDIP8 9.655X6.6, 2.54P
DATE 18 SEP 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AC
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13447G
PDIP8 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP8 GW
CASE 709AD
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13448G
PDIP8 GW
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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