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FOD3182
3A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Applications
■ High noise immunity characterized by 50kV/µs (Typ.)
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
■
common mode rejection @ VCM = 2,000V
Guaranteed operating temperature range of
-40°C to +100°C
3A peak output current
Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
Fast output rise/fall time
– Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide VDD operating range: 10V to 30V
Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply rail
(rail-to-rail output)
5000Vrms, 1 minute isolation
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving MOSFETs
Minimum creepage distance of 8.0mm
Minimum clearance distance of 10mm to 16mm
(option TV or TSV)
Minimum insulation thickness of 0.5mm
UL and VDE*
1,414 peak working insulation voltage (VIORM)
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET gate drive
Description
The FOD3182 is a 3A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
*Requires ‘V’ ordering option
Functional Block Diagram
Package Outlines
NC 1
8 VDD
ANODE 2
7 VO2
8
8
1
1
CATHODE 3
6 VO1
NC 4
5 VSS
8
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
8
1
1
www.fairchildsemi.com
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
February 2011
LED
VDD – VSS “Positive Going”
(Turn-on)
VDD – VSS “Negative Going”
(Turn-off)
VO
Off
0V to 30V
0V to 30V
Low
On
0V to 7.4V
0V to 7V
Low
On
7.4V to 9V
7V to 8.5V
Transition
On
9V to 30V
8.5V to 30V
High
Pin Definitions
Pin #
Name
Description
1
NC
2
Anode
3
Cathode
4
NC
5
VSS
Negative Supply Voltage
6
VO2
Output Voltage 2 (internally connected to VO1)
7
VO1
Output Voltage 1
8
VDD
Positive Supply Voltage
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
Not Connected
LED Anode
LED Cathode
Not Connected
www.fairchildsemi.com
2
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Truth Table
As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety
limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150Vrms
I–IV
For Rated Mains Voltage < 300Vrms
I–IV
For Rated Mains Voltage < 450Vrms
I–III
For Rated Mains Voltage < 600Vrms
I–III
For Rated Mains Voltage < 1000Vrms (Option T, TS)
I–III
Climatic Classification
40/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test with
tm = 1 sec., Partial Discharge < 5pC
2651
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test with
tm = 60 sec.,Partial Discharge < 5 pC
2121
VIORM
Max Working Insulation Voltage
1,414
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
8
mm
External Clearance
7.4
mm
10.16
mm
0.5
mm
Case Temperature
150
°C
Input Current
25
mA
Output Power (Duty Factor ≤ 2.7%)
250
mW
109
Ω
External Clearance (for Option T or TS - 0.4” Lead Spacing)
Insulation Thickness
Safety Limit Values – Maximum Values Allowed in the
Event of a Failure
TCase
IS,INPUT
PS,OUTPUT
RIO
Insulation Resistance at TS, VIO = 500V
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
3
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Safety and Insulation Ratings
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
°C
260 for 10 sec.
°C
TJ
TSOL
Lead Solder Temperature – Wave solder
(Refer to Reflow Temperature Profile, pg. 22)
IF(AVG)
Average Input Current(1)
25
mA
IF(tr, tf)
LED Current Minimum Rate of Rise/Fall
250
ns
VR
Reverse Input Voltage
5
V
IOH(PEAK)
“High” Peak Output
Current(2)
3
A
IOL(PEAK)
“Low” Peak Output Current(2)
3
A
VDD – VSS
Supply Voltage
-0.5 to 35
V
VO(PEAK)
Output Voltage
0 to VDD
V
250
mW
295
mW
Dissipation(4)
PO
Output Power
PD
Total Power Dissipation(5)
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Value
Units
Power Supply
10 to 30
V
IF(ON)
Input Current (ON)
10 to 16
mA
VF(OFF)
Input Voltage (OFF)
-3.0 to 0.8
V
VDD – VSS
Parameter
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
4
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,
unless otherwise specified.
Symbol
Parameter
IOH
High Level Output Current
IOL
Low Level Output Current
VOH
Test Conditions
Min.
Typ.
VOH = (VDD – VSS – 1V)
0.5
0.9
A
VOH = (VDD – VSS – 6V)
2.5
VOL = (VDD – VSS + 1V)
0.5
1
A
VOL = (VDD – VSS + 6V)
2.5
High Level
Output Voltage(5)(6)
IO = -100mA
Output Voltage(5)(6)
IO = 100mA
Max.
VDD – 0.5
Unit
V
VOL
Low Level
VSS + 0.5
V
IDDH
High Level Supply Current
Output Open,
IF = 10 to 16mA
2.6
4.0
mA
IDDL
Low Level Supply Current
Output Open,
VF = -3.0 to 0.8V
2.5
4.0
mA
IFLH
Threshold Input Current Low to
High
IO = 0mA, VO > 5V
3.0
7.5
mA
VFHL
Threshold Input Voltage High to Low IO = 0mA, VO < 5V
0.8
1.1
V
Input Forward Voltage
IF = 10mA
∆VF / TA
Temperature Coefficient of Forward
Voltage
IF = 10mA
VUVLO+
UVLO Threshold
VO > 5V, IF = 10mA
7
8.3
9
V
VO < 5V, IF = 10mA
6.5
7.7
8.5
V
VF
VUVLO–
0.6
BVR
Input Reverse Breakdown Voltage
IR = 10µA
CIN
Input Capacitance
f = 1MHz, VF = 0V
1.8
-1.5
UVLOHYST UVLO Hysteresis
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
1.43
5
V
mV/°C
V
V
25
pF
www.fairchildsemi.com
5
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,
unless otherwise specified.
Symbol
Parameter
Test Conditions Min.
tPLH
Propagation Delay Time to High Output Level(7)
tPHL
Propagation Delay Time to Low Output Level(7)
PWD
Pulse Width Distortion(8)
IF = 10mA,
Rg = 10Ω,
f = 250kHz,
Duty Cycle = 50%,
Cg = 10nF
Propagation Delay Difference Between Any
PDD
(tPHL – tPLH) Two Parts(9)
tr
Rise Time
tf
Fall Time
tUVLO ON
UVLO Turn On Delay
tUVLO OFF
UVLO Turn Off Delay
Typ.
Max.
Unit
50
120
210
ns
50
145
210
ns
35
65
ns
90
ns
-90
CL = 10nF,
Rg = 10Ω
| CMH |
Output High Level Common Mode Transient
Immunity(10) (11)
TA = +25°C,
If = 7mA to 16mA,
VCM = 2kV,
VDD = 30V
35
| CML |
Output Low Level Common Mode Transient
Immunity(10) (12)
TA = +25°C,
Vf = 0V,
VCM = 2kV,
VDD = 30V
35
38
ns
24
ns
2.0
µs
0.3
µs
50
kV/µs
50
kV/µs
Isolation Characteristics
Symbol Parameter
Isolation Voltage(13) (14)
Test Conditions
VISO
Withstand
TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ≤ 10µA
RI-O
Resistance (input to output)(14)
VI-O = 500V
CI-O
Capacitance (input to output)
Freq. = 1MHz
Min.
Typ.*
5000
Max.
Unit
Vrms
1011
Ω
1
pF
*Typical values at TA = 25°C
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
6
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
6.
7.
Maximum pulse width = 1ms, maximum duty cycle = 20%.
tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
8.
PWD is defined as | tPHL – tPLH | for any given device.
The difference between tPHL and tPLH between any two FOD3182 parts under same operating conditions, with
equal loads.
10. Pin 1 and 4 need to be connected to LED common.
11. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 15V).
8.
12. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
13. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,
60Hz for 1 second (leakage detection current limit II-O < 10µA).
14. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
7
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Notes:
1. Derate linearly above +79°C free air temperature at a rate of 0.37mA/°C.
2. Maximum pulse width = 10µs, maximum duty cycle = 11%.
3 Derate linearly above +79°C, free air temperature at the rate of 5.73mW/°C.
4. No derating required across operating temperature range.
5. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VDD
as IOH approaches zero amps.
Fig. 2 Output High Voltage Drop vs. Ambient Temperature
0.5
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
(VOH - VDD) – HIGH OUTPUT VOLTAGE DROP (V)
Fig. 1 Output High Voltage Drop vs. Output High Current
Frequency = 200Hz
Duty Cycle = 0.1%
IF = 10mA to 16mA
VDD = 15V to 30V
VSS = 0V
0
-0.5
-1.0
TA = -40°C
-1.5
-2.0
TA = 25°C
TA =100°C
-2.5
-3.-0
-3.5
0
0.5
1.0
1.5
2.0
2.5
0.00
-0.05
VDD = 15V to 30V
VSS = 0V
IF = 10mA to 16mA
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
-20
Fig. 3 Output High Current vs. Ambient Temperature
40
60
80
100
8
Frequency = 200Hz
Duty Cycle = 0.2%
IF = 10mA to 16mA
VDD = 15V to 30V
IOH – OUTPUT HIGH CURRENT (A)
IOH – OUTPUT HIGH CURRENT (A)
20
Fig. 4 Output High Current vs. Ambient Temperature
8
6
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
Frequency = 100Hz
Duty Cycle = 0.5%
IF = 10mA to 16mA
VDD = 15V to 30V
6
VO = 6V
4
VO = 3V
2
0
-40
100
-20
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Output Low Voltage vs. Output Low Current
Fig. 6 Output Low Voltage vs. Ambient Temperature
4
0.30
Frequency = 200Hz
Duty Cycle = 99.9%
VF(off) = 0.8V
VDD = 15V to 30V
VSS = 0V
3
VOL – OUTPUT LOW VOLTAGE (V)
VOL – OUTPUT LOW VOLTAGE (V)
0
TA – AMBIENT TEMPERATURE (°C)
IOH – OUTPUT HIGH CURRENT (A)
TA =100°C
TA = 25°C
2
TA = -40°C
1
0.5
1.0
1.5
2.0
2.5
IOL – OUTPUT LOW CURRENT (A)
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
0.20
0.15
0.10
0.05
0
-40
0
0
0.25
VDD = 15V to 30V
VSS = 0V
VF = -3V to 0.8V
IO = 100mA
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
www.fairchildsemi.com
8
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 7 Output Low Current vs. Ambient Temperature
Fig. 8 Output Low Current vs. Ambient Temperature
8
Frequency = 200Hz
Duty Cycle = 99.8%
VF = 0.8V
VDD = 15V to 30V
IOL – OUTPUT LOW CURRENT (A)
IOL – OUTPUT LOW CURRENT (A)
8
6
VO = 6V
4
VO = 3V
2
0
-40
-20
0
20
40
60
80
Frequency = 100Hz
Duty Cycle = 99.5%
VF = 0.8V
VDD = 15V to 30V
6
VO = 6V
4
VO = 3V
2
0
-40
100
TA – AMBIENT TEMPERATURE (°C)
0
40
60
80
100
Fig. 10 Supply Current vs. Supply Voltage
Fig. 9 Supply Current vs. Ambient Temperature
3.6
IDD – SUPPLY CURRENT (mA)
VDD = 15V to 30V
VSS = 0V
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
3.4
3.2
IDDH(30V)
3.0
IDDL(30V)
2.8
IDDH(15V)
2.6
IF = 0mA (for IDDL)
IF = 10mA (for IDDH)
VSS = 0V
TA = 25°C
3.2
2.8
IDDH
IDDL
2.4
IDDL(15V)
2.4
2.2
-40
2.0
-20
0
20
40
60
80
15
100
20
Fig. 11 Low-to-High Input Current Threshold
vs. Ambient Temperature
30
Fig. 12 Propagation Delay vs. Supply Voltage
250
3.6
VDD = 15V to 30V
VSS = 0V
Output = Open
tP – PROPAGATION DELAY (ns)
3.4
25
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
IFLH – LOW-to-HIGH INPUT CURRENT THRESHOLD (mA)
20
TA – AMBIENT TEMPERATURE (°C)
3.6
IDD – SUPPLY CURRENT (mA)
-20
3.2
3.0
2.8
2.6
IF = 10mA to 16mA
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
150
tPHL
tPLH
100
2.4
2.2
-40
50
-20
0
20
40
60
80
15
100
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
18
21
24
27
30
VDD – SUPPLY VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
www.fairchildsemi.com
9
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 13 Propagation Delay vs. LED Forward Current
Fig. 14 Propagation Delay vs. Ambient Temperature
450
VDD = 15V to 30V
TA = 25°C
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
200
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
250
150
tPHL
tPLH
100
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
350
250
tPHL
150
tPLH
50
6
8
10
12
14
50
-40
18
IF – FORWARD LED CURRENT (mA)
20
40
60
80
100
Fig. 16 Propagation Delay vs. Series Load Capacitance
450
450
IF = 10mA to 16mA
VDD = 15V to 30V
CG = 10nF
Duty Cycle = 50%
Frequency = 250kHz
tP – PROPAGATION DELAY (ns)
tP – PROPAGATION DELAY (ns)
0
TA – AMBIENT TEMPERATURE (°C)
Fig. 15 Propagation Delay vs. Series Load Resistance
350
250
tPHL
150
-20
IF = 10mA to 16mA
VDD = 15V to 30V
RG = 10Ω
Duty Cycle = 50%
Frequency = 250kHz
350
250
tPHL
150
tPLH
tPLH
50
50
0
10
20
30
40
50
0
RG – SERIES LOAD RESISTANCE (Ω)
20
40
60
80
100
CG – SERIES LOAD CAPACITANCE (nF)
Fig. 17 Transfer Characteristics
Fig. 18 Input Forward Current vs. Forward Voltage
35
100
VDD = 30V
TA = 25°C
IF – FORWARE CURRENT (mA)
VO – OUTPUT VOLTAGE (V)
30
25
20
15
10
10
1
TA =100°C
0.1
-40°C
25°C
0.01
5
0
0
1
2
3
4
0.001
0.6
5
IF – FORWARD LED CURRENT (mA)
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
0.8
1.0
1.2
1.4
1.6
1.8
VR – FORWARE VOLTAGE (V)
www.fairchildsemi.com
10
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 19 Under Voltage Lockout
20
VO – OUTPUT VOLTAGE (V)
18
16
14
12
10
(8.30V)
8
6
4
2
(7.80)
0
0
5
10
15
20
(VDD – VSS) – SUPPLY VOLTAGE (V)
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
11
Power Supply
+
+
C1
0.1µF
VDD = 10V to 30V
C2
47µF
Pulse Generator
PW = 4.99ms
Period = 5ms
ROUT = 50Ω
1
8
2
7
3
6
Pulse-In
Iol
R2
100Ω
D1
VOL
LED-IFmon
4
Power Supply
+
+
C3
0.1µF
V = 6V
C4
47µF
5
R1
100Ω
To Scope
Test Conditions:
Frequency = 200Hz
Duty Cycle = 99.8%
VDD = 10V to 30V
VSS = 0V
VF(OFF) = -3.0V to 0.8V
Figure 20. IOL Test Circuit
Power Supply
+
+
C1
0.1µF
VDD = 10V to 30V
C2
47µF
Pulse Generator
PW = 10µs
Period = 5ms
ROUT = 50Ω
1
8
2
7
Pulse-In
+
+
C3
0.1µF
Ioh
R2
100Ω
3
6
4
5
Power Supply
V = 6V
–
VOH
LED-IFmon
C4
47µF
D1
Current
Probe
To Scope
R1
100Ω
Test Conditions:
Frequency = 200Hz
Duty Cycle = 0.2%
VDD = 10V to 30V
VSS = 0V
IF = 10mA to 16mA
Figure 21. IOH Test Circuit
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
12
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Test Circuit
1
8
2
7
0.1µF
+
–
IF = 10 to 16mA
VO
6
3
VDD = 10 to 30V
100mA
4
5
Figure 22. VOH Test Circuit
1
8
2
7
100mA
+
–
0.1µF
3
6
4
5
VDD = 10 to 30V
VO
Figure 23. VOL Test Circuit
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
13
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Test Circuit (Continued)
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Test Circuit (Continued)
1
8
2
7
0.1µF
IF = 10 to 16mA
3
6
4
5
+
–
VDD = 30V
+
–
VDD = 30V
VO
Figure 24. IDDH Test Circuit
+
–
1
8
2
7
0.1µF
VF = -0.3 to 0.8V
3
6
4
5
VO
Figure 25. IDDL Test Circuit
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
14
IF
1
8
2
7
3
6
4
5
0.1µF
+
–
VDD = 10 to 30V
+
–
VDD = 10 to 30V
VO > 5V
Figure 26. IFLH Test Circuit
+
–
1
8
2
7
0.1µF
VF = –0.3 to 0.8V
3
6
4
5
VO
Figure 27. VFHL Test Circuit
1
8
2
7
0.1µF
+
–
IF = 10mA
3
6
4
5
VO = 5V
10V or 30V
VDD Ramp
Figure 28. UVLO Test Circuit
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
15
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Test Circuit (Continued)
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Test Circuit (Continued)
1
8
0.1µF
2
+
–
Probe
F = 250kHz
DC = 50%
7
3
6
4
5
VO
+
–
VDD = 10 to 30V
Rg = 10Ω
Cg = 10nF
50Ω
IF
tr
tf
90%
50%
VOUT
10%
tPLH
tPHL
Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms
IF
1
8
2
7
A
0.1µF
+
–
B
5V
+
–
3
6
4
5
VDD = 30V
VO
+–
VCM = 2,000V
VCM
0V
∆t
VO
VOH
Switch at A: IF = 10mA
VO
VOL
Switch at B: IF = 0mA
Figure 30. CMR Test Circuit and Waveforms
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
16
Part Number
Package
Packing Method
FOD3182
DIP 8-Pin
Tube (50 units per tube)
FOD3182S
SMT 8-Pin (Lead Bend)
Tube (50 units per tube)
FOD3182SD
SMT 8-Pin (Lead Bend)
Tape and Reel (1,000 units per reel)
FOD3182V
DIP 8-Pin, IEC60747-5-2 option
Tube (50 units per tube)
FOD3182SV
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3182SDV
SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option
Tape and Reel (1,000 units per reel)
FOD3182TV
DIP 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3182TSV
SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tube (50 units per tube)
FOD3182TSR2
SMT 8-Pin, 0.4” Lead Spacing
Tape and Reel (700 units per reel)
FOD3182TSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option
Tape and Reel (700 units per reel)
Marking Information
1
3182
XX YY B
V
3
2
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with
DIN EN/IEC 60747-5-2 option – See order entry table)
4
Two digit year code, e.g., ‘11’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
17
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
D0
P0
t
K0
P2
E
F
A0
W1
d
t
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
16.0 ± 0.3
Tape Thickness
0.30 ± 0.05
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
7.5 ± 0.1
2.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
12.0 ± 0.1
10.30 ±0.20
B0
10.30 ±0.20
K0
4.90 ±0.20
W1
d
R
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
Cover Tape Width
13.2 ± 0.2
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
18
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications – Option S
D0
P0
t
K0
P2
E
F
A0
W1
d
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
24.0 ± 0.3
Tape Thickness
0.40 ± 0.1
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
11.5 ± 0.1
t
2.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
16.0 ± 0.1
12.80 ± 0.1
B0
10.35 ± 0.1
K0
5.7 ±0.1
W1
d
R
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
Cover Tape Width
21.0 ± 0.1
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
19
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications – Option TS
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
Temperature (°C)
TP
260
240
TL
220
200
180
160
140
120
100
80
60
40
20
0
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
tP
Tsmax
tL
Preheat Area
Tsmin
ts
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Freature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (tS) from (Tsmin to Tsmax)
60–120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60–150 seconds
Peak Body Package Temperature
260°C +0°C / –5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max.
Time 25°C to Peak Temperature
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
8 minutes max.
www.fairchildsemi.com
20
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