FQD3P50TM

P-Channel QFET® MOSFET - 500 V, - 2.1 A, 4.9 Ω Features Description • - 2.1 A, - 500 V, RDS(on) = 4.9 Ω (Max.) @ VGS = - 10 V, ID = - 1.05 A This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D S ! G G! S ▶ ▲ D-PAK (TO252) Absolute Maximum Ratings Symbol VDSS ID ● ! TC = 25°C unless otherwise noted IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR PD TJ, TSTG TL - Pulsed D FQD3P50 Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -500 - Continuous (TC = 100°C) dv/dt ● ● (Note 1) Unit V -2.1 A -1.33 A -8.4 A ± 30 V (Note 2) 250 mJ Avalanche Current (Note 1) -2.1 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 5.0 -4.5 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/°C °C 300 °C FQD3P50 2.5 Unit °C/W (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case, Max. RθJA Thermal Resistance, Junction-to-Ambient, Max. * 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009Semiconductor Components Industries, LLC. October-2017,Rev.2 Publication Order Number: FQD3P50/D FQD3P50 P-Channel QFET® MOSFET FQD3P50 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -500 -- -- V -- 0.42 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = -500 V, VGS = 0 V -- -- -1 µA VDS = -400 V, TC = 125°C -- -- -10 µA Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.05 A -- 3.9 4.9 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.05 A -- 2.1 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 510 660 pF -- 70 90 pF -- 9.5 12 pF -- 12 35 ns -- 56 120 ns -- 35 80 ns -- 45 100 ns -- 18 23 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -250 V, ID = -2.7 A, RG = 25 Ω (Note 4) VDS = -400 V, ID = -2.7 A, VGS = -10 V (Note 4) -- 3.6 -- nC -- 9.2 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.1 ISM -- -- -8.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.1 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time 270 -- ns Reverse Recovery Charge VGS = 0 V, IS = -2.7 A, dIF / dt = 100 A/µs -- Qrr -- 1.5 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 102mH, IAS = -2.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature www.onsemi.com 2 FQD3P50 P-Channel QFET® MOSFET Elerical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V -I D, Drain Current [A] 0 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -2 10 0 10 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 6 VGS = - 20V 5 4 3 2 ※ Note : TJ = 25℃ 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1200 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1000 800 Capacitance [pF] -I DR , Reverse Drain Current [A] VGS = - 10V Ciss 600 Coss 400 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 200 0 -1 10 0 10 1 10 10 -V GS , Gate-Source Voltage [V] RDS(on) [ Ω ], Drain-Source On-Resistance 7 VDS = -100V VDS = -250V 8 VDS = -400V 6 4 2 ※ Note : ID = -2.7 A 0 0 2 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQD3P50 P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.35 A 0.5 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 Operation in This Area is Limited by R DS(on) 2.0 1 -I D, Drain Current [A] 100 µs 1 ms 10 ms 0 10 DC -1 10 ※ Notes : 1.5 1.0 0.5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 ※ N o te s : 1 . Z θ J C ( t ) = 2 . 5 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .0 5 -1 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e 10 125 Figure 10. Maximum Drain Current vs. Case Temperature 0 .1 10 100 D = 0 .5 0 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Z -I D, Drain Current [A] 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD3P50 P-Channel QFET® MOSFET Typical Characteristics FQD3P50 P-Channel QFET® MOSFET Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp VDD VDS (t) ID (t) IAS BVDSS www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQD3P50 P-Channel QFET® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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