FQD2N100TM

Silicon N-Channel Power MOSFET Features： FQD2N100TM CI5930-30A V DSS 1000 V  Fast Switching ID 2 A  Low Gate Charge and Rdson P D (T C =25℃) 85 W  Low Reverse transfer capacitances R DS(ON).TYPE. 7.8 Ω  100% Single Pulse avalanche energy Test TO-252 Applications： Power switch circuit of adaptor and charger.  Absolute（Tc= 25℃ unless otherwise specified）： Symbol V DSS Parameter Rating Units 1000 V 2 A 1.2 A 8 A Gate-to-Source Voltage ±30 V 160 mJ Drain-to-Source Voltage Continuous Drain Current ID Continuous Drain Current T C = 100 °C I DM a1 V GS Pulsed Drain Current E AS a2 Single Pulse Avalanche Energy E AR a1 Avalanche Energy ,Repetitive 10 mJ I AR a1 Avalanche Current 2.1 A Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 85 W 0.68 W/℃ 150， –55 to 150 ℃ 300 ℃ dv/dt a3 PD T J ， T stg TL Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering www.tokmas.com Silicon N-Channel Power MOSFET FQD2N100TM CI5930-30A Electrical Characteristics（Tc=25℃ unless otherwise specified）： OFF Characteristics Symbol V DSS Parameter Test Conditions Drain to Source Breakdown Voltage V GS =0V,I D =250µA ΔBV DSS /ΔT J Bvdss Temperature Coefficient Rating Min. Typ. Max. 1000 -- -- I D =250uA,Reference25℃ -- 1.5 -- V DS =1000V,V GS = 0V,T a =25℃ -- -- 1 V DS =800V,V=0V,Ta=125℃ -- -- 250 Units V V/℃ I DSS Drain to Source Leakage Current µA I GSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 100 nA I GSS(R) Gate to Source Reverse Leakage V GS =-30V -- -- 100 nA ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance V GS =10V,I D =1.0A V GS(TH) Gate Threshold Voltage V DS =V GS ,I D =250µA Rating Min. Typ. Max. Units -- 7.8 8.8 Ω 2.0 3.0 4.0 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Parameter Symbol g fs Forward Transconductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Test Conditions V DS =15V,I D =2.0A V GS =0V,V DS =25V f=1.0MHz Rating Min. Typ. Max. -- 2.1 -- -- 380 -- -- 40 -- -- 4 -- Units S pF Resistive Switching Characteristics Parameter Symbol t d(ON) tr t d(OFF) tf Test Conditions Turn-on Delay Time Rating Min. Typ. Max. -- 8 -- Rise Time I D =2.0A,V DD =500V -- 6 -- Turn-Off Delay Time V GS =10V,R G =12Ω -- 36 -- -- 15 -- -- 15 -- -- 2.1 -- -- 6 -- Fall Time Qg Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain (“ Miller ” )Charge I D =2.0A,V DD =500V V GS =10V www.tokmas.com Units ns nC Silicon N-Channel Power MOSFET FQD2N100TM CI5930-30A Source-Drain Diode Characteristics Test Conditions Rating Symbol Parameter IS Continuous Source Current (Body Diode) -- -- 2 A I SM Maximum Pulsed Current (Body Diode) -- -- 8 A V SD Diode Forward Voltage I S =2.0A,V GS =0V -- -- 1.5 V t rr Reverse Recovery Time I S =2.0A,T j = 25°C -- 500 -- ns Q rr Reverse Recovery Charge dI F /dt=100A/us,V GS =0V -- 1.2 -- uC Min. Typ. Max. Units Pulse width tp≤380µs,δ≤2% Symbol Parameter Typ. Units R θJC Junction-to-Case 1.47 ℃ /W 100 ℃ /W R θJA Junction-to-Ambient a1 ： Repetitive a2 ： L=10.0mH, a3 ： I SD rating; pulse width limited by maximum junction temperature Start T J =25℃ =2.0A,di/dt ≤100A/us,V DD ≤BV DS, Start T J =25℃ www.tokmas.com Silicon N-Channel Power MOSFET www.tokmas.com FQD2N100TM CI5930-30A Silicon N-Channel Power MOSFET www.tokmas.com FQD2N100TM CI5930-30A