N-Channel QFET® MOSFET
1000 V, 1.6 A, 9 Ω
Features
Description
This N-Channel enhancement mode power MOSFET is
produced
using
ON
Semiconductor’s
proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V,
ID = 0.8 A
• Low Gate Charge ( Typ. 12 nC)
• Low Crss ( Typ. 5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
I-PAK
D-PAK
G
D
G
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
TC = 25°C unless otherwise noted
Parameter
FQD2N100TM / FQU2N100TU
1000
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
Unit
V
1.6
A
1.0
A
6.4
A
± 30
V
(Note 2)
160
mJ
Avalanche Current
(Note 1)
1.6
A
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
5.0
5.5
2.5
mJ
V/ns
W
50
0.4
-55 to +150
W
W/°C
°C
300
°C
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
RJA
FQD2N100TM
FQU2N100TU
Parameter
Thermal Resistance, Junction to Case, Max.
2.5
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
110
2
Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max.
©2004 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Unit
o
C/W
50
Publication Order Number:
FQU2N100/D
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
FQD2N100 / FQU2N100
Device Marking
FQD2N100
Device
FQD2N100TM
FQU2N100
FQU2N100TU
Electrical Characteristics
Symbol
Package
DPAK
Reel Size
Tape Width
16 mm
330 mm
IPAK
-
Quantity
2500
-
70
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
1000
--
--
V
--
0.976
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 1000 V, VGS = 0 V
--
--
10
µA
VDS = 800 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.8 A
--
7.1
9
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 0.8 A
--
1.9
--
S
--
400
520
pF
--
40
52
pF
--
5
6.5
pF
--
13
35
ns
--
30
70
ns
--
25
60
ns
--
35
80
ns
--
12
15.5
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 500 V, ID = 2.0 A,
RG = 25 Ω
(Note 4)
VDS = 800 V, ID = 2.0 A,
VGS = 10 V
(Note 4)
--
2.5
--
nC
--
6.5
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.5
ISM
--
--
6.0
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 1.6 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
520
--
ns
Qrr
Reverse Recovery Charge
--
2.3
--
µC
VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
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FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
ID, Drain Current [A]
10
ID , Drain Current [A]
Top :
-1
10
150℃
0
10
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
-1
-2
10
-1
0
10
10
1
10
10
2
4
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
VGS , Gate-Source Voltage [V]
8
10
Figure 2. Transfer Characteristics
IDR , Reverse Drain Current [A]
RDS(on) , [ Ω ]
Drain-Source On-Resistance
20
15
VGS = 10V
0
10
10
VGS = 20V
5
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
※ Note : TJ = 25℃
0
0
1
2
3
4
-1
10
ID , Drain Current [A]
0.2
1.2
1.4
VDS = 200V
10
300
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
100
VGS , Gate-Source Voltage [V]
Capacitance [pF]
Coss
200
1.0
12
Ciss
500
400
0.8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
0.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
0.4
VDS = 500V
VDS = 1000V
8
6
4
2
※ Note : ID = 1.6 A
0
-1
10
0
0
10
1
10
0
2
6
8
10
12
14
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
4
Figure 6. Gate Charge Characteristics
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3
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250µA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 0.8 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.8
Operation in This Area
is Limited by R DS(on)
10
1.5
1 ms
0
10
10 ms
DC
-1
10
※ Notes :
o
1. TC = 25 C
1.2
0.9
0.6
0.3
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0.0
25
3
10
10
50
Figure 9. Maximum Safe Operating Area
10
0
75
100
125
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
ZJC(t), Thermal Response [oC/W]
ID, Drain Current [A]
100 µs
10 µs
ID, Drain Current [A]
1
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C ( t) = 2 .5 ℃ /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .1
0 .0 5
10
-1
0 .0 2
PDM
0 .0 1
t1
s i n g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
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10
1
150
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Typical Characteristics
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
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5
Time
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
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VDD
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-251 3L (IPAK)
Figure 17. TO-251 (I-PAK) Molded, 3 Lead Option AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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