FQT4N20LTF

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. March 2013 N-Channel QFET® MOSFET 200 V, 0.85 A, 1.40 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A • Low Gate Charge (Typ. 4 nC) • Low Crss (Typ. 6 pF) • 100% Avalanche Tested • Low Level Gate Drive Requirments Allowing Direct Operation From Logic Drives D ! D " G! S G Absolute Maximum Ratings Symbol VDSS ID ! " " " SOT-223 ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) FQT4N20L 200 Unit V 0.85 A 0.68 A 3.4 A IDM Drain Current VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 52 mJ IAR Avalanche Current (Note 1) 0.85 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 0.22 5.5 2.2 0.018 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient * Typ -- Max 57 Unit °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 www.fairchildsemi.com FQT4N20L N-Channel MOSFET FQT4N20L Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 200 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 VDS = 200 V, VGS = 0 V -- -- 1 µA VDS = 160 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.425 A VGS = 5 V, ID = 0.425 A -- 1.10 1.13 1.35 1.40 Ω gFS Forward Transconductance VDS = 30 V, ID = 0.425 A -- 1.42 -- S -- 240 310 pF -- 36 45 pF -- 6 8 pF ns IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 3.8 A, RG = 25 Ω (Note 4, 5) VDS = 160 V, ID = 3.8 A, VGS = 5 V (Note 4, 5) -- 7 25 -- 70 150 ns -- 15 40 ns -- 40 90 ns -- 4.0 5.2 nC -- 1.0 -- nC -- 1.9 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 0.85 ISM -- -- 3.4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.85 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 3.8 A, dIF / dt = 100 A/µs (Note 4) -- 90 -- ns -- 0.25 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 108mH, IAS = 0.85A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 www.fairchildsemi.com FQT4N20L N-Channel MOSFET Electrical Characteristics 0 ID , Drain Current [A] 10 Bottom : VGS 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V ID , Drain Current [A] Top : ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 150℃ 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test -1 10 -1 -1 0 10 10 1 10 10 0 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 8 VGS = 5 V 0 10 VGS = 10V 4 2 0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test -1 0 2 4 6 8 10 0.2 0.4 0.6 ID , Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 450 10 Capacitance [pF] Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 150 100 Crss 50 VGS, Gate-Source Voltage [V] Ciss 250 200 1.2 1.4 1.6 1.8 12 VDS = 40V 350 300 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 0.8 VSD , Source-Drain Voltage [V] VDS = 100V 8 VDS = 160V 6 4 2 ※ Note : ID = 3.8 A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 0 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQT4N20L N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.425 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.0 1 Operation in This Area is Limited by R DS(on) 10 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 0.8 100 µs 1 ms 0 10 0.6 DC -1 10 0.4 ※ Notes : -2 10 0.2 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.0 25 -3 10 -1 10 0 1 10 2 10 10 50 75 Figure 9. Maximum Safe Operating Area 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 2 D = 0 .5 10 ※ N o te s : 1 . Z θ J C( t ) = 5 7 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 1 0 .1 0 .0 5 10 0 .0 2 0 PDM 0 .0 1 θ JC (t), T h e rm a l R e s p o n s e 10 100 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t1 Z s in g le p u ls e 10 t2 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 www.fairchildsemi.com FQT4N20L N-Channel MOSFET Typical Characteristics FQT4N20L N-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 5V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V tp ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQT4N20L N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 www.fairchildsemi.com FQT4N20L N-Channel MOSFET Package Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 0.70 ±0.10 (0.95) 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2001 Fairchild Semiconductor Corporation FQT4N20L Rev. C0 www.fairchildsemi.com FQT4N20L N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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