FQT7N10LTF

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQT7N10L N-Channel QFET® MOSFET 100 V, 1.7 A, 350 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A • Low Gate Charge (Typ. 5.8 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested D ! D " G! S G ! " " " SOT-223 ! S Absolute Maximum Ratings Symbol VDSS ID TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 70°C) FQT7N10L 100 Unit V 1.7 A 1.36 A 6.8 A IDM Drain Current VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ IAR Avalanche Current (Note 1) 1.7 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) (Note 1) 0.2 6.0 2.0 0.016 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient * Typ -- Max 62.5 Unit °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 www.fairchildsemi.com FQT7N10L N-Channel MOSFET July 2015 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 100 -- -- V -- 0.1 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.85 A VGS = 5 V, ID = 0.85 A -- 0.275 0.300 0.35 0.38 Ω gFS Forward Transconductance VDS = 30 V, ID = 0.85 A -- 2.75 -- S -- 220 290 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 55 72 pF -- 12 15 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 7.3 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 7.3 A, VGS = 5 V (Note 4, 5) -- 9 30 ns -- 100 210 ns -- 17 45 ns -- 50 110 ns -- 4.6 6.0 nC -- 1.0 -- nC -- 2.6 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.7 ISM -- -- 6.8 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.7 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/µs (Note 4) -- 70 -- ns -- 140 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 www.fairchildsemi.com FQT7N10L N-Channel MOSFET Electrical Characteristics FQT7N10L N-Channel MOSFET Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TA = 25℃ -1 10 -1 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 IDR , Reverse Drain Current [A] 1.2 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 5V 0.9 VGS = 10V 0.6 0.3 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ 0.0 -1 0 5 10 15 20 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 400 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss 300 Coss 200 Crss 100 10 VGS, Gate-Source Voltage [V] 500 Capacitance [pF] 25℃ VDS = 50V 8 VDS = 80V 6 4 2 ※ Note : ID = 7.3 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.85 A 0.5 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 1.6 100 µs ID, Drain Current [A] ID, Drain Current [A] 1 ms 10 ms 1.2 0 10 100 ms DC 0.8 -1 10 ※ Notes : 0.4 o 1.TA = 25 C o 2. TJ = 150 C 3. Single Pulse 0.0 25 -2 10 -1 10 0 1 10 2 10 10 50 75 100 125 TA, Ambient Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Ambient Temperature 10 150 2 D = 0 .5 10 ※ 1. 2. 3. 0 .2 1 0 .1 N o te s : ZθJA(t) = 62.5 oC/W Max. Duty Factor, D = t1 / t2 TJM - TC = PDM * ZθJA(t) 0 .0 5 0 .0 2 10 0 PDM 0 .0 1 θ JA (t), Thermal R esponse VDS, Drain-Source Voltage [V] t1 Z s in g le p u ls e 10 t2 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 www.fairchildsemi.com FQT7N10L N-Channel MOSFET Typical Characteristics FQT7N10L N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQT7N10L N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. 1.3 www.fairchildsemi.com 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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