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FSB619
NPN Low-Saturation Transistor
Features
• This device is designed with high-current gain and low-saturation
voltage with collector currents up to 3 A continuous.
C
E
B
SuperSOTTM-3 (SOT-23)
Ordering Information
Part Number
Marking
Package
Packing Method
FSB619
619
SSOT 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
50
V
VCBO
Collector-Base Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
TJ, TSTG
Collector Current - Continuous
Operating and Storage Junction Temperature Range
2
A
-55 to +150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
FSB619 — NPN Low-Saturation Transistor
September 2015
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Device Dissipation
Max.
Unit
500
mW
4
mW/°C
250
°C/W
(3)
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Note:
3. Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in2 of 2oz copper.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
50
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
50
V
BVEBO
5
Emitter-Base Breakdown Voltage
IE = 100 μA, IC = 0
ICBO
Collector Cut-Off Current
VCB = 40 V, IE = 0
100
nA
IEBO
Emitter Cut-Off Current
VEB = 4 V, IC = 0
100
nA
ICES
Collector Emitter Cut-Off Current
VCES = 40 V
100
nA
hFE
VCE(sat)
VBE(sat)
VBE(on)
DC Current Gain(4)
Collector-Emitter Saturation
Voltage(4)
Base-Emitter Saturation Voltage(4)
(4)
IC = 10 mA, VCE = 2 V
200
IC = 200 mA, VCE = 2 V
300
IC = 1 A, VCE = 2 V
200
IC = 2 A, VCE = 2 V
100
V
IC = 100 mA, IB = 10 mA
20
IC = 1 A, IB = 10 mA
235
IC = 2 A, IB = 50 mA
320
IC = 2 A, IB = 50 mA
1
mV
V
Base-Emitter On Voltage
IC = 2 A, VCE = 2 V
1
V
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
fT
Transition Frequency
IC = 50 mA, VCE = 10 V,
f = 100 MHz
100
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
www.fairchildsemi.com
2
FSB619 — NPN Low-Saturation Transistor
Thermal Characteristics
400
1200
o
350
IB = 0.7 mA
250
IB = 0.6 mA
IB = 0.5 mA
200
IB = 0.4 mA
150
IB = 0.3 mA
100
IB = 0.2 mA
50
IB = 0.1 mA
0
2
4
6
8
IB = 2.5 mA
800
600
IB = 1.5 mA
400
IB = 1 mA
200
0
10
IB = 2 mA
0
2
VCE - Collector-Emitter Voltage (V)
4
6
8
10
VCE - Collector-Emitter Voltage (V)
Figure 1. Static Characteristics
Figure 2. Static Characteristics
10
700
600
o
TA = 150 C
IC - Collector Current (A)
hFE - DC Current Gain
IB = 3 mA
1000
IB = 0.8 mA
300
0
TA = 25 C
IB = 0.9 mA
IC - Collector Current (mA)
IC - Collector Current (mA)
o
TA = 25 C
500
400
o
TA = 25 C
300
200
o
TA = -55 C
1
0.1
o
0.01
TA = 150 C
o
o
TA = 25 C
TA = -55 C
1E-3
100
0
1E-4
1E-3
0.01
0.1
1
1E-4
0.0
10
1
IC = 10IB
0.1
o
TA = 150 C
o
TA = 25 C
o
TA = -55 C
1E-3
1E-4
1E-3
0.01
0.1
1
10
IC - Collector Current (A)
Figure 5. Collector-Emitter Saturation Voltage vs.
Collector Voltage
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
0.4
0.6
0.8
1.0
Figure 4. Base-Emitter On Voltage vs.
Collector Voltage
VCE(SAT) - Collector-Emitter Saturation Voltage (V)
VCE(SAT) - Collector-Emitter Saturation Voltage (V)
Figure 3. DC Current Gain vs. Collector Current
0.01
0.2
VBE(ON) - Base-Emitter On Voltage (V)
IC - Collector Current (A)
1
IC = 20IB
0.1
o
TA = 150 C
o
TA = 25 C
0.01
o
TA = -55 C
1E-3
1E-4
1E-3
0.01
0.1
1
10
IC - Collector Current (A)
Figure 6. Collector-Emitter Saturation Voltage vs.
Collector Voltage
www.fairchildsemi.com
3
FSB619 — NPN Low-Saturation Transistor
Typical Performance Characteristics
VBE(SAT) - Base-Emitter Saturation Voltage (V)
VBE(SAT) - Base-Emitter Saturation Voltage (V)
10
IC = 10IB
o
TA = -55 C
1
o
TA = 25 C
o
TA = 150 C
0.1
1E-4
1E-3
0.01
0.1
1
10
10
IC = 20IB
o
TA = -55 C
1
o
TA = 25 C
o
TA = 150 C
0.1
1E-4
1E-3
IC - Collector Current (A)
Figure 7. Base-Emitter Saturation Voltage vs.
Collector Current
1
10
1000
100
IEBO - Emitter Cut-Off Current (nA)
ICBO - Collector Cut-Off Current (nA)
0.1
Figure 8. Base-Emitter Saturation Voltage vs.
Collector Current
1000
o
TA = 150 C
10
1
0.1
o
TA = 25 C
0.01
o
TA = -55 C
1E-3
10
20
30
40
50
100
o
1
0.1
0.01
o
TA = -55 C
1
COB - Output Capacitance (pF)
400
300
200
100
0.1
1
4
5
100
90
80
70
60
6
f = 1 MHz
Level = 40 mV
o
TA = 25 C
50
40
30
20
10
0.1
10
VEB - Emitter-Base Voltage (V)
1
10
100
VCB - Collector-Base Voltage (V)
Figure 11. Typical Input Capacitance
© 1998 Fairchild Semiconductor Corporation
FSB619 Rev. 2.2
3
Figure 10. Emitter Cut-Off Current vs.
Emitter-Base Voltage
f = 1 MHz
Level = 40 mV
o
TA = 25 C
500
2
VEB - Emitter-Base Voltage (V)
Figure 9. Collector Cut-Off Current vs.
Collector-Base Voltage
1000
900
800
700
600
o
TA = 25 C
1E-3
1E-4
60
TA = 150 C
10
VCB - Collector-Base Voltage (V)
CIB - Input Capacitance (pF)
0.01
IC - Collector Current (A)
Figure 12. Typical Output Capacitance
www.fairchildsemi.com
4
FSB619 — NPN Low-Saturation Transistor
Typical Performance Characteristics (Continued)
2.92±0.12
0.95
A
3
1.40
B
1.40±0.12
1
2.20
2
0.508
0.382
(0.29)
0.10
0.95
M
1.00
A B
1.90
1.90
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.12 MAX
0.10
0.00
(0.94)
0.10
C
M
C
2.51±0.20
GAGE PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
0.178
0.102
0.20
0.43
0.33
(0.56)
SCALE: 50:1
SEATING
PLANE
A) NO JEDEC REFERENCE AS OF AUGUST 2003
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 2009.
E) DRAWING FILE NAME: MKT-MA03BREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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