ISL9R18120G2

STEALTHt Diode 18 A, 1200 V ISL9R18120G2, ISL9R18120S3S Description The ISL9R18120G2, ISL9R18120S3S is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com $Y&Z&3&K R18120G2 TO−247−2LD CASE 340CL CATHODE (FLANGE) Features • • • • • Stealth Recovery trr = 300 ns (@ IF = 18 A) Max Forward Voltage, VF = 3.3 V (@ TC = 25°C) 1200 V Reverse Voltage and High Reliability Avalanche Energy Rated These Devices are Pb−Free and are RoHS Compliant $Y&Z&3&K R18120S3S N/C ANODE D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ Applications • • • • • ANODE CATHODE CATHODE (BOTTOM SIDE METAL) MARKING DIAGRAM Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode $Y &Z &3 &K R18120G2, R18120S3S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code SYMBOL K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2002 March, 2020 − Rev. 3 1 Publication Order Number: ISL9R18120S3S/D ISL9R18120G2, ISL9R18120S3S DEVICE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Ratings Unit Repetitive Peak Reverse Voltage VRRM 1200 V Working Peak Reverse Voltage VRWM 1200 V VR 1200 V Average Rectified Forward Current (TC = 92°C) IF(AV) 18 A Repetitive Peak Surge Current (20 kHz Square Wave) IFRM 36 A Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) IFSM 200 A PD 125 W EAVL 20 mJ TJ, TSTG −55 to +175 °C TL TPKG 300 260 °C °C Parameter DC Blocking Voltage Power Dissipation Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Package Body for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9R18120G2 R18120G2 TO−247−2LD Tube N/A 30 Reel 24 mm 800 ISL9R18120S3ST R18120S3S TO−263−3LD (D2−PAK) THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case RqJC TO−247, TO−263 − − 1.0 °C/W Thermal Resistance Junction to Ambient RqJA TO−247 − − 30 °C/W Thermal Resistance Junction to Ambient RqJA TO−263 − − 62 °C/W www.onsemi.com 2 ISL9R18120G2, ISL9R18120S3S ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit TC = 25°C − − 100 mA TC = 125°C − − 1.0 mA TC = 25°C − 2.7 3.3 V TC = 125°C − 2.5 3.1 V Off State Characteristics Instantaneous Reverse Current IR VR = 1200 V On State Characteristics Instantaneous Forward Voltage VF IF = 18 A Dynamic Characteristics CJ VR = 10 V, IF = 0 A − 69 − pF Reverse Recovery Time trr IF = 1 A, dIF/dt = 100 A/ms, VR = 30 V − 38 45 ns IF = 18 A, dIF/dt = 100 A/ms, VR = 30 V − 60 70 ns Reverse Recovery Time trr − 300 − ns Reverse Recovery Current Irr − 6.5 − A Reverse Recovered Charge Qrr IF = 18 A, dIF/dt = 200 A/ms, VR = 780 V, TC = 25°C − 950 − nC Reverse Recovery Time trr − 400 − ns Softness Factor (tb/ta) S − 7.0 − − Reverse Recovery Current Irr IF = 18 A, dIF/dt = 200 A/ms, VR = 780 V, TC = 125°C − 8.0 − A Reverse Recovered Charge Qrr − 2.0 − mC Reverse Recovery Time trr − 235 − ns Softness Factor (tb/ta) S − 5.2 − − Reverse Recovery Current Irr − 22 − A Reverse Recovered Charge Qrr − 2.1 − mC dIM/dt − 370 − A/ms Junction Capacitance Switching Characteristics Maximum di/dt During tb IF = 18 A, dIF/dt = 1000 A/ms, VR = 780 V, TC = 125°C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 ISL9R18120G2, ISL9R18120S3S TYPICAL PERFORMANCE CURVES 30 1000 IR, Reverse Current (mA) IF, Forward Current (A) 25 20 15 10 5 0 0.25 0.75 1.25 1.75 2.25 2.75 100 10 1 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VR, Reverse Voltage (kV) 3.25 VF, Forward Voltage (V) Figure 2. Reverse Current vs. Reverse Voltage 600 600 500 500 t, Recovery Times (ns) t, Recovery Times (ns) Figure 1. Forward Current vs. Forward Voltage 400 300 200 400 300 200 100 100 0 0 3 6 9 12 15 18 21 24 IF, Forward Current (A) 0 200 27 30 IRR, Max Reverse Recovery Current (A) IRR, Max Reverse Recovery Current (A) 25 20 15 10 5 3 6 9 12 15 18 21 24 27 1400 Figure 4. ta and tb Curves vs. dIF/dt Figure 3. ta and tb Curves vs. Forward Current 0 600 800 1000 1200 400 dIF/dt, Current Rate of Change (A/ms) 30 25 20 15 10 5 200 IF, Forward Current (A) Figure 5. Maximum Reverse Recovery Current vs. Forward Current 400 600 800 1000 1200 dIF/dt, Current Rate of Change (A/ms) 1400 Figure 6. Maximum Reverse Recovery Current vs. dIF/dt www.onsemi.com 4 ISL9R18120G2, ISL9R18120S3S 10 QRR, Reverse Recovered Charge (nC) 9 8 7 6 5 4 3 200 400 600 800 1000 1200 1400 3600 3200 2800 2400 2000 1600 1200 800 200 dIF/dt, Current Rate of Change (A/ms) IRM(REC), Max Reverse Recovery Current (A) 1000 800 600 400 200 100 −8.5 400 −9.0 380 −9.5 360 −10.0 340 −10.5 320 −11.0 300 −11.5 280 −12.0 260 −12.5 25 50 60 40 20 0 25 75 125 100 TC, Case Temperature (°C) 240 150 Figure 10. Reverse Recovery Current and Times vs. Case Temperature Figure 9. Junction Capacitance vs. Reverse Voltage IF(AV), Average Forward Current (A) CJ, Junction Capacitance (pF) 1200 0.1 1 10 VR, Reverse Voltage (V) 1400 Figure 8. Reverse Recovered Charge vs. dIF/dt Figure 7. Reverse Recovery Softness Factor vs. dIF/dt 0 0.01 400 600 800 1000 1200 dIF/dt Current Rate of Change (A/ms) tRR, Recovery Times (ns) S, Reverse Recovery Softness Factor TYPICAL PERFORMANCE CURVES (continued) 50 75 100 125 150 TC, Case Temperature (°C) 175 Figure 11. DC Current Derating Curve www.onsemi.com 5 ISL9R18120G2, ISL9R18120S3S ZqJA, Normalized Thermal Impedance TYPICAL PERFORMANCE CURVES (continued) 1.0 0.1 0.01 10−5 10−3 10−4 10−2 10−1 101 100 t, Rectangular Pulse Duration (s) Figure 12. Normalized Maximum Transient Thermal Impedance TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT CURRENT SENSE RG VGE + − MOSFET t1 IF VDD dIF dt trr ta tb 0 0.25 IRM t2 IRM Figure 14. trr Waveforms and Definitions Figure 13. trr Test Circuit I=1A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) L CURRENT SENSE VAVL R + VDD IL Q1 IL I V DUT VDD − t0 t1 t2 t Figure 16. Avalanche Current and Voltage Waveforms Figure 15. Avalanche Energy Test Circuit STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−2LD CASE 340CL ISSUE A DATE 03 DEC 2019 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13850G TO−247−2LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE F SCALE 1:1 GENERIC MARKING DIAGRAMS* XX XXXXXXXXX AWLYWWG IC DOCUMENT NUMBER: DESCRIPTION: XXXXXXXXG AYWW Standard 98AON56370E AYWW XXXXXXXXG AKA Rectifier XXXXXX XXYMW SSG DATE 11 MAR 2021 XXXXXX = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week W = Week Code (SSG) M = Month Code (SSG) G = Pb−Free Package AKA = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. D2PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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