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KSC2752
KSC2752
High Speed
High Voltage Swiching Industrial Use
TO-126
1
NPN Epitaxial Silicon Transistor
1. Emitter
2.Collector
3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
500
Units
V
400
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
0.5
A
ICP
*Collector Current (Pulse)
1
A
IB
Base Current (DC)
PC
Collector Dissipation (Ta=25°C)
0.25
A
1
W
PC
Collector Dissipation (TC=25°C)
10
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics TC=25°C
unless otherwise noted
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
Test Condition
IC = 0.3A, IB1 = 0.06A, L = 10mH
Min.
400
Max.
Units
V
VCEX(sus)1
Collector-Emitter Sustaining Voltage
IC = 0.3A, IB1 = -IB2 = 0.06A
VBE(off) = -5V, L =10mH, Clamped
450
V
VCEX(sus)2
Collector-Emitter Sustaining Voltage
IC = 0.6A, IB1 = 0.2A, IB2 = -0.06A
VBE(off) = -5V, L = 10mH, Clamped
400
V
10
µA
1
mA
ICBO
Collector Cut-off Current
VCB = 400V, IE = 0
ICER
Collector Cut-off Current
VCE = 400V, RBE = 51Ω, TC= 125°C
ICEX1
Collector Cut-off Current
VCE = 400V, RBE(off) = -1.5V
10
µA
ICEX2
Collector Cut-off Current
VCE = 400V, RBE(off) = -1.5V
@ TC= 125°C
1
mA
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.3A
20
10
80
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 0.3A, IB = 0.06A
1
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 0.3A, IB = 0.06A
2
V
VCC = 150V, IC = 0.3A
IB1 = -IB2 = 0.06A, RL = 500Ω
PW = 50µs, Duty Cycle≤2%
1
µs
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
2.5
µs
1
µs
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
hFE Classification
Classification
R
O
Y
hFE1
20 ~ 40
30 ~ 60
40 ~ 80
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2752
Typical Characteristics
1000
IB = 50mA
IB = 45mA
IB = 40mA
IB = 35mA
IB = 30mA
IB = 25mA
IB = 20mA
IB = 15mA
0.4
0.3
V CE = 2V, 5V
Pulsed
hFE, DC CURRENT GAIN
IB = 10mA
0.2
IB = 5mA
0.1
0.0
0
1
2
3
4
100
V CE = 5V
10
VCE = 2V
1
0.1
5
Figure 1. Static Characteristic
10
100
1000
10
IC = 5 IB1 = -5 IB2
IC = 5 IB
Pulsed
1
tSTG
V BE(sat)
0.1
1
tF
tON
0.1
VCE (sat)
0.01
0.1
0.01
1
10
100
1000
10
100
IC[mA], COLLECTOR CURRENT
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
PW
1m
D
Di
ss C
i
Lim patio
ite n
d
0.1
10
0u
s
s
=
10
u
s
d
VCEO(sus) MAX.
ite
m
Li
0.01
1E-3
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
0.8
0.6
0.4
VCEO(sus)
IC(Pulse) MAX.
1
IC[A], COLLECTOR CURRENT
1.0
b
S/
IC[A], COLLECTOR CURRENT
10
Figure 2. DC current Gain
tON, tSTG, tF [µs], TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.2
VCEX(sus)
IC[A], COLLECTOR CURRENT
0.5
0.0
0
100
200
300
400
500
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Reverse Bias Safe Operating Area
Rev. A, February 2000
KSC2752
Typical Characteristics (Continued)
16
140
14
PC[W], POWER DISSIPATION
160
dT[%], IC DERATING
120
100
80
S/b
Di
ss
60
Lim
ited
ipa
tio
n
40
Lim
ite
d
20
0
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve of Safe Operating Area
©2000 Fairchild Semiconductor International
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A, February 2000
3.45
3.05
8.30
7.70
4.00
3.80
14.20 MAX
3.20
11.20
10.80
1.95
1.55
1.35
1.70
1.50
D
0.85
0.65 3X
#1
2.29
FRONT VIEW
NOTES:
A.
B.
C.
0.60
0.45 3X
0.254 M
SIDE VIEW
TOP VIEW
3°
1.00
E
PRODUCTION
CODE
TSSTU
TSTU
NONE
(STD LENGTH)
TERMINAL
LENGTH "D"
3.45 - 4.05
2.36 - 2.96
TERMINAL
LENGTH "E"
6.45-7.45
5.36-6.36
12.76 - 13.36
15.76-16.76
NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
ALL DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
E
F.
FOR TERMINAL LENGTH "E", REFER TO TABLE
DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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