LB11970FV-TLM-E

LB11970FV Single-phase Full-wave Driver for Fan Motor Overview The LB11970FV is a single-phase full-wave driver for fan motor. www.onsemi.com Functions • Single-phase full-wave drive (16V to 1.2A output transistor incorporated) • Variable speed function using thermistor input and external signal incorporated Enables silent and low-vibration variable speed control through direct PWM control with separately-excited upper Tr • Current limiter circuit (limit at IO=480mA with RL=1 connection, the limiter value determined with Rf) • Kick-back absorption circuit incorporated • Low-consumption, low-loss, and low-noise drive enabled by the soft switching circuit during phase shift • Regeneration Di incorporated with less external parts • HB incorporated • Lock protection and automatic reset functions incorporated • FG (rotation detection) output • Thermal shutdown circuit incorporated XXXXXXXXXX YMDDD Applications • Personal computer power supply systems • CPU cooling fan systems XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol SSOP18 (225mil) (Note1) Conditions Ratings Unit VCC maximum supply voltage VCC max 17 V VM maximum supply voltage VM max 17 V OUT pin maximum output current IOUT max 1.2 A OUT pin output withstand voltage VOUT max 18 V HB maximum output current HB 10 mA VTH, RMI input pin withstand voltage VTH RMI max 7 V P-IN input pin withstand voltage VP-IN max VCC V FG output pin output withstand voltage VFG max 18 V FG output current IFG max 10 mA Allowable power dissipation Pd max 0.8 W ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Specified substrate (Note2) Operating temperature range Topr -30 to 90 °C Storage temperature range Tstg -55 to 150 °C 1. Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified substrate: 30mm30mm0.8mm, paper phenol. © Semiconductor Components Industries, LLC, 2016 November 2016- Rev. 1 1 Publication Order Number: LB11970FV/D LB11970FV Recommended Operating Ranges at Ta = 25C Parameter (Note3) Symbol Conditions Ratings Unit VCC supply voltage VCC 4.5 to 16 V VM supply voltage VM 3.5 to 16 V VTH, RMI input level voltage range VTH, RMI P-IN input level voltage range VP-IN Triangular wave input range VRM 0.5 to 4 V Hall input common phase input voltage range VICM 0.2 to 3 V 0 to 6 V 0 to VCC V 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics at Ta = 25C, VCC = 12V, Rf = 0, unless otherwise specified. (Note4) Ratings Parameter Symbol Conditions unit min Circuit current ICC1 During drive typ 12 max 18 mA 14 17 mA 1.22 1.32 V 5.95 6.10 V 3.4 3.6 3.8 V 1.4 1.6 1.8 V ICT1 1.8 2.2 2.6 A CT pin discharge current ICT2 0.18 0.22 0.26 A CT charge/discharge current ratio RCT 10 12 OUT output L saturation voltage VOL IO=200mA 0.1 0.2 V OUT output H saturation voltage VOH IO=200mA, Rf=1 0.6 0.8 V 10 20 mV 0.2 0.3 V 30 A ICC2 During lock protection 11 HB voltage VHB IHB=5mA 1.12 6VREG voltage V6VREG I6VREG=5mA 5.85 CT pin H level voltage VCTH CT pin L level voltage VCTL CT pin charge current 8 Current limiter VRF Hall input sensitivity VHN FG output pin L voltage VFG IFG=5mA FG output pin leak current IFGL VFG=7V 15 480 Zero peak value mV (including offset and hysteresis) THD Overheat protection circuit Design guarantee value (Note5) 180 °C 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Design target value and no measurement was made. www.onsemi.com 2 LB11970FV Package Dimensions unit : mm SSOP18 (225 mil) CASE 565AX ISSUE A 5.80 (Unit: mm) 1.00 SOLDERING FOOTPRINT* 0.80 0.42 NOTE: The measurements are not to guarantee but for reference only. www.onsemi.com 3 LB11970FV Pd max - Ta Allowable Power Dissipation, Pd max - W 1.0 Mounted on a board: 30mm30mm0.8mm, paper phenol 0.8 0.6 0.4 0.38 0.2 0 -30 -10 10 30 50 70 90 Ambient Temperature, Ta -C 110 ILB01811 Pin Assignment OUT2 1 18 P-GND VM 2 17 OUT1 VCC 3 16 S-GND WH 4 15 6VREG WL 5 VTH 6 13 IN- RMI 7 12 HB P-IN 8 11 IN+ CPWM 9 10 FG LB11970FV 14 CT Top view PGND: Motor system GND SGND: Control system GND www.onsemi.com 4 LB11970FV Equivalent Circuit Diagram FG RMI VTH H: Rotation mode CPWM Thermal shat down L: Regeneration mode P-IN VCC Comparator Current control circuit VM Constant voltage Delay circuit 6VREG HALL Controller 1.25V HB OUT M IN+ Delay circuit IN- OUT Hysteresis AMP Charge/discharge circuit CT SGND Oscillation P-IN RMI VTH WH WL CPWM PGND Truth Table VTH PIN IN- IN+ L L H L (OPEN) L L H CT OUT1 OUT2 FG H L L L H OFF Mode Running - drive L L H L OFF L L L L H L OFF OFF - H H L - H L H - - H L - - L H H Running - regeneration OFF L L Output regeneration mode L OFF OFF with external signal H OFF L L H L OFF OFF L Lock protection VTH, P-IN = L means VTH, P-IN < CPWM VTH, P-IN = H means VTH, P-IN > CPWM www.onsemi.com 5 LB11970FV Application Circuit Example Rf *4 CM VCC *2 VM HB *8 IN- H *5 *7 IN+ FG 6VREG *3-3 R6 R4 PIN *3-1 R5 C=2200 to 4700pF R=20 to 50 R1 WH PWM-IN R2 OUT1 R3 WL R7 *3-2 RMI RTU OUT2 R8 R1 *3 WH VTH R2 PGND TH CPWM CP=100pF *f=25kHz *1 WL *6 R3 CT SGND CT=0.47 to 1F www.onsemi.com 6 LB11970FV *1. Power supply - GND wiring PGND is connected to the motor power system while SGND is connected to the control circuit power system. Wiring is made separately for PGND and SGND, and external parts of each control system are connected to SGND. *2. Power stabilization capacitor for regeneration CM capacitor is a power stabilizing capacitor for PWM drive and kick-back absorption and has the capacitance of 4.7F or more. Since this IC performs current regeneration with the lower Tr through switching of the upper Tr, connect CM with the thick and shortest possible pattern between VM and PGND. *3. Setting of the temperature detection variable speed Setting of the triangular wave oscillation voltage The rotation speed variable range for the temperature is set with the triangular wave oscillation voltage. There are two setting methods as follows: 3-1 3-2 The upper voltage (VCPH) of triangular wave is determined by V[voltage of the R1 connection counterpart] (R2/(R1+R2)) and the lower voltage (VCPL) of triangular wave is determined by V ((R2//R3) / (R1+R2//R3)). The upper voltage (VCPH) of triangular wave is determined by V((R2+R3) / (R1+R2+R3)) and the lower voltage (VCPL) of triangular wave is determined by V(R2/(R1+R2)). Setting of the thermistor The resistance (RTU from VCC or 6VREG and the voltage generated through division of thermistor (TH) are input in the VTH pin. When the voltage at the VTH pin drops below VCPL due to temperature change, the full speed (thermistor input speed control side only) is obtained. To set the full speed with the thermistor tripping, connect each pin of 3-3 to VCC and each input voltage is generated by divided resistance from VCC. When the thermistor trips and the VTH pin is pulled up to VCC, the full speed (thermistor input speed control side only) is obtained. *4. Setting the current limiter The current limiter is activated when the voltage between current detection resistors exceeds 0.48V between VCC and VM. The current limiter is activated at IO = 480mA when RL = 1. Setting is made with the Rf resistance. Short-circuit VCC and VM when the current limiter is not to be used. When 12V is used, the current limiter must be applied at 1A or less if the coil resistance is 10 or less. *5. Hall input Wiring must be as short as possible to prevent carrying of noise. The Hall input circuit is a comparator with hysteresis of 20mV. The Hall input level is recommended to be three times (60mVp-p) or more of this hysteresis. *6. Capacitor to set the PWM oscillation frequency Oscillation with f = 25kHz occurs at CP = 100pF and PWM voltage width of 1.6V, and becomes the reference frequency of PWM. *7. FG output This is the open collector output, enabling detection of the rotation speed using the FG output corresponding to the phase shift. Keep this output OPEN when not used. *8. HB pin Hall element bias pin, which is a 1.22V constant-voltage output pin *9. RMI pin Minimum speed setting pin for thermistor speed control, which must be pulled up with 6 VREG when not used. By connecting the capacitor, the time to ignore thermistor input at startup can be set. *10. PIN pin Direct PWM speed control pin. Pull down the P-IN input to GND when not using this pin. The lowest output DUTY setting is made with R4 and R5. Keep R5 open for stop with DUTY at 0%. www.onsemi.com 7 LB11970FV ORDERING INFORMATION Device LB11970FV-MPB-H Package Wire Bond Shipping(Qty/Packing) SSOP18(225mil) Au-wire 60 / Fan-fold Au-wire 2000 / Tape & Reel Cu-wire 2000 / Tape & Reel (Pb-Free / Halogen Free) LB11970FV-TLM-H SSOP18(225mil) (Pb-Free / Halogen Free) LB11970FV-W-AH SSOP18(225mil) (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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