MBR140SFT1

MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc−dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. These state−of−the−art devices have the following features: • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL94, V0 at 1/8″ Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C ESD Ratings: Human Body Model, 3B SOD−123FL CASE 498 PLASTIC DEVICE MARKING Mechanical Characteristics • Reel Options: MBR140SFT1 = 3,000 per 7″ reel/8 mm tape • • • • • • Reel Options: MBR140SFT3 = 10,000 per 13″ reel/8 mm tape Device Marking: L4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds L4FD L4F D = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† MBR140SFT1 SOD−123FL 3000/Tape & Reel MBR140SFT3 SOD−123FL 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2003 September, 2003 − Rev. 2 1 Publication Order Number: MBR140SFT1/D MBR140SFT1 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 30 A Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/
s Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 112°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 40 V) (VR = 20 V) 3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 85°C 0.36 0.55 0.85 0.30 0.515 0.88 TJ = 25°C TJ = 85°C 0.5 0.15 25 18 V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR140SFT1 100 10 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C TJ = −40°C 0.1 0.1 0.3 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 TJ = 125°C TJ = 85°C 0.1 0.1 IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) TJ = 125°C TJ = 85°C TJ = 25°C 10E−6 0.9 1.0E+0 TJ = 85°C 10E−3 1.0E−3 TJ = 25°C 100E−6 1.0E−6 0 10 20 30 40 10E−6 0 10 VR, REVERSE VOLTAGE (VOLTS) freq = 20 kHz dc 1.6 1.4 SQUARE WAVE 1.2 1 Ipk/Io =  0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 45 55 65 75 85 95 30 40 Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) 1.8 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 0.7 100E−3 100E−6 25 35 0.5 Figure 2. Maximum Forward Voltage 100E−3 1.0E−3 0.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10E−3 TJ = 25°C 105 115 125 TL, LEAD TEMPERATURE (°C) 1.0 0.9 0.8 Ipk/Io = 10 0.7 Ipk/Io =  SQUARE Ipk/Io = 5 WAVE Ipk/Io = 20 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBR140SFT1 1000 125 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) RJA = 25.6°C/W TJ = 25°C 100 115 130°C/W 105 324.9°C/W 95 85 235°C/W 75 65 55 10 0 5 10 15 20 30 25 35 0 40 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 40 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 DUTY CYCLE, D = t1/t2 1 SINGLE PULSE JA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR140SFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE O B L E D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. H POLARITY INDICATOR OPTIONAL AS NEEDED C K L J http://onsemi.com 5 DIM A B C D E H J K L MILLIMETERS MIN MAX 1.50 1.80 2.50 2.90 0.90 1.00 0.70 1.10 0.55 0.95 0.00 0.10 0.10 0.20 3.40 3.80 0° 8° INCHES MIN MAX 0.059 0.071 0.098 0.114 0.035 0.039 0.028 0.043 0.022 0.037 0.000 0.004 0.004 0.008 0.134 0.150 0° 8° MBR140SFT1 RECOMMENDED FOOTPRINT FOR SOD−123FL ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD−123 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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