MBR2H100SFT3G

MBR2H100SFT3G, NRVB2H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 100 VOLTS Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOD−123FL CASE 498 MARKING DIAGRAM L2HMG G L2H M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics • • • • • • • • Reel Options: MBR2H100SFT3G = 10,000 per 13 in reel/8 mm tape Device Marking: L2H Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 2 1 ORDERING INFORMATION Device Package Shipping† MBR2H100SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel NRVB2H100SFT3G SOD−123 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBR2H100SF/D MBR2H100SFT3G, NRVB2H100SFT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 146°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A IFSM 50 A Tstg, TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V 0.76 0.84 0.61 0.68 40 0.5 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR2H100SFT3G, NRVB2H100SFT3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150°C 125°C 25°C 10 1 150°C 125°C 25°C 10 1 0.1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 0 1.0 1.2 1.4 Figure 2. Maximum Forward Voltage 1.6 IR, REVERSE CURRENT (mA) 10 150°C 0.1 125°C 0.01 0.001 0.0001 10 20 30 40 50 60 0.1 125°C 0.01 25°C 0.001 0.0001 25°C 0 150°C 1 70 80 90 0.00001 0 100 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 4.0 RqJL = 23°C/W dc 3.0 Square Wave 2.0 1.5 1.0 0.5 0 120 125 130 135 140 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) 0.8 Figure 1. Typical Forward Voltage 0.00001 IF(AV), AVERAGE FORWARD CURRENT (A) 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 2.5 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 3.5 0.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 TJ = 175°C Square Wave dc 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBR2H100SFT3G, NRVB2H100SFT3G TYPICAL CHARACTERISTICS 140 TJ = 25°C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 MBR2H100SFT3G, NRVB2H100SFT3G PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. D 1 2 DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° c RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° L b 2X BOTTOM VIEW 1.22 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR2H100SF/D