MBR16100CTG

MBR16100CTG Switch-mode Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total (8.0 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* www.onsemi.com SCHOTTKY BARRIER RECTIFIER 16 AMPERES, 100 VOLTS Applications 1 • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 MARKING DIAGRAM Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C 4 TO−220 CASE 221A STYLE 6 1 2 AYWW B16100G AKA 3 A Y WW B16100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR16100CTG TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 6 1 Publication Order Number: MBR16100CT/D MBR16100CTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 166°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz) TC = 165°C IFRM 16 A Non-repetitive Peak Surge Current (Surge applied at rated load conditions half-wave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Rating A 8.0 16 IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case (Min. Pad) Junction−to−Ambient (Min. Pad) Symbol Value Unit RqJC RqJA 2.0 60 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 8.0 A, TJ = 125°C) (iF = 8.0 A, TJ = 25°C) (iF = 16 A, TJ = 125°C) (iF = 16 A, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Min Typical Max − − − − 0.56 0.68 0.67 0.79 0.60 0.74 0.69 0.84 − − 0.95 0.0013 5.0 0.1 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 MBR16100CTG 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD VOLTAGE (AMPS) 100 10 125°C 75°C 1 175°C TJ = 25°C 0.1 10 125°C 175°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 0.9 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 IR, REVERSE CURRENT (AMPS) 1E−1 175°C 1E−2 125°C 1E−3 1E−4 75°C 1E−5 1E−6 TJ = 25°C 1E−7 175°C 1E−2 125°C 1E−3 75°C 1E−4 TJ = 25°C 1E−5 1E−6 1E−7 0 10 20 30 40 50 60 70 80 90 0 100 10 20 VR, REVERSE VOLTAGE (VOLTS) , AVERAGE FORWARD CURRENT (AMPS) dc 12 10 SQUARE WAVE 8.0 6.0 4.0 145 150 155 160 165 170 175 I F (AV) 2.0 0 140 40 50 60 70 80 90 100 Figure 4. Typical Capacitance Per Diode 16 14 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Per Diode , AVERAGE FORWARD CURRENT (AMPS) 0.2 Figure 2. Maximum Forward Voltage Per Diode 1E−1 IR, REVERSE CURRENT (AMPS) 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode F (AV) TJ = 25°C 0.1 0 I 75°C 1 180 16 RATED VOLTAGE APPLIED 14 RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) dc 12 10 8.0 SQUARE WAVE dc 6.0 4.0 2.0 0 0 TC, CASE TEMPERATURE (C°) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3 175 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1400 TJ = 175°C 1200 SQUARE WAVE C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) MBR16100CTG dc 1000 800 600 400 200 0 2 4 6 8 0 10 12 14 16 18 20 22 24 26 28 30 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance Per Diode www.onsemi.com 4 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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