0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MBR735G

MBR735G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO220-2

  • 描述:

    Diode Schottky 35V 7.5A Through Hole TO-220-2

  • 数据手册
  • 价格&库存
MBR735G 数据手册
MBR735, MBR745 Switch-mode Power Rectifiers Features and Benefits • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 1, 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C MARKING DIAGRAM 4 TO−220AC CASE 221B STYLE 1 AY WWG B7x5 KA 1 3 A Y WW B7x5 x KA G = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Diode A Polarity = Pb−Free Package ORDERING INFORMATION Device MBR735 MBR735G MBR745 MBR745G Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 8 1 Publication Order Number: MBR735/D MBR735, MBR745 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol MBR735 MBR745 Average Rectified Forward Current (TC = 164°C) Value VRRM VRWM VR Per Device Unit V 35 45 IF(AV) A 7.5 Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C) IFRM 7.5 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case Characteristic RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 7.5 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Min Typ Max − − − 0.48 0.61 0.68 0.57 0.72 0.84 − − 10 0.03 15 0.1 Unit V mA MBR735, MBR745 10 IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 25°C 100°C 1 175°C 125°C 150°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 TJ = 25°C 10 100°C 125°C 175°C 1 150°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 IR, REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 150°C 10 125°C 100°C 1.0 75°C 0.1 0.01 0.001 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current http://onsemi.com 3 50 MBR735, MBR745 14 dc 12 IF(AV), AVERAGE FORWARD CURRENT (A) IF(AV), AVERAGE FORWARD CURRENT (A) 14 10 SQUARE 8 6 4 2 12 10 8 145 150 155 160 165 170 175 dc 6 4 SQUARE WAVE 2 0 0 140 180 0 25 50 TC, CASE TEMPERATURE (°C) 100 125 150 175 Figure 5. Current Derating, Ambient, Per Leg 1000 TJ = 25°C TJ = 25°C f = 1 MHz 900 C, CAPACITANCE (nF) PF(AV), AVERAGE POWER DISSIPATION (W) 75 TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case, Per Leg 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 RqJA = 16°C/W RqJA = 60°C/W (No Heat Sink) dc SQUARE WAVE dc 800 700 600 500 400 300 200 100 0 2 4 6 8 0 10 12 14 16 18 20 22 24 26 28 30 0 10 20 30 40 IF(AV), AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 6. Forward Power Dissipation Figure 7. Typical Capacitance http://onsemi.com 4 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
MBR735G 价格&库存

很抱歉,暂时无法提供与“MBR735G”相匹配的价格&库存,您可以联系我们找货

免费人工找货