MBRS140T3G,
SBRS8140T3G
SBRS140T3G
Surface Mount
Schottky Power Rectifier
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 40 VOLTS
Features
•
•
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.55 V Max @ 1.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
ESD Ratings:
♦ Human Body Model = 3B (> 8000 V)
♦ Machine Model = C (> 400 V)
SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These are Pb−Free Devices
MARKING DIAGRAM
AYWW
B14 G
G
B14
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Pac
(Note: Microdot may be in either location)
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
SMB
CASE 403A
260°C Max. for 10 Seconds
Cathode Polarity Band
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS140T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
SBRS8140T3G*
SMB
(Pb−Free)
2,500 /
Tape & Reel
SBRS140T3G
SMB
(Pb−Free)
2,500 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2017 − Rev. 11
1
Publication Order Number:
MBRS140T3/D
MBRS140T3G, SBRS8140T3G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
TL = 115°C
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Operating Junction Temperature
A
1.0
A
40
TJ
−65 to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Characteristic
Thermal Resistance − Junction−to−Lead
(TL = 25°C)
Value
RqJL
Unit
°C/W
12
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
Value
Unit
V
0.6
mA
1.0
10
2
TC = 100°C
TC = 125°C
0.2
TC = 25°C
TC = -40°C
TC = -55°C
0.02
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
2
TC = 100°C
TC = 125°C
0.2
TC = 25°C
TC = -40°C
TC = -55°C
0.02
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
1.0
200
180
TJ = 125°C
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
C, CAPACITANCE (pF)
160
100°C
75°C
25°C
140
120
100
80
60
40
20
0
4
8
12
16
20
24
28
32
36
0
40
0
4
8
12
16
20
24
28
32
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
10
RATED VOLTAGE APPLIED
RqJC = 12°C/W
TJ = 125°C
9
8
7
6
5
4
DC
3
SQUARE WAVE
2
1
0
30
40
50
60
70
80
90 100
TC, CASE TEMPERATURE (°C)
110
120
130
Figure 5. Current Derating (Case)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
I R , REVERSE CURRENT (mA)
MBRS140T3G, SBRS8140T3G
5
DC
SQUARE
WAVE
TJ = 125°C
4
π
5
3
CAPACITANCE
LOAD
2
IPK
IAV
10
= 20
1
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Power Dissipation
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3
5
36
40
MBRS140T3G, SBRS8140T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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4
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MBRS140T3/D