0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MCK12140DR2G

MCK12140DR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOICN8_150MIL

  • 描述:

    IC DETECTOR PHASE FREQ 8-SOIC

  • 数据手册
  • 价格&库存
MCK12140DR2G 数据手册
Phase‐Frequency Detector MCH12140, MCK12140 Description The MCH/K12140 is a phase frequency−detector intended for phase−locked loop applications which require a minimum amount of phase and frequency difference at lock. When used in conjunction with high performance VCO such as the MC100EL1648, a high bandwidth PLL can be realized. The device is functionally compatible with the MC12040 phase−frequency detector with the maximum frequency extending to 800 MHz. When the Reference (R) and VCO (V) inputs are unequal in frequency and/or phase, the differential UP (U) and DOWN (D) outputs will provide pulse streams which when subtracted and integrated provide an error voltage for control of a VCO. See AND8040 for further information. The device is packaged in a small outline, surface mount 8−lead SOIC package. There are two versions of the device to provide I/O compatibility to the two existing ECL standards. The MCH12140 is compatible with MECL™ 10H logic levels while the MCK12140 is compatible to 100 K ECL logic levels. This device can also be used in +5.0 V systems. See AND8020 for termination information www.onsemi.com 8 1 SOIC−8 D SUFFIX CASE 751 MARKING DIAGRAM 8 1 x A L Y W G Features • • • • • 800 MHz Typical Bandwidth Small Outline 8-Lead SOIC Package 75 kW Internal Input Pulldown Resistors >1000 V ESD Protection These Devices are Pb−Free, Halogen Free and are RoHS Compliant = H or K = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS U U D D U (fR > fV) R R Q U (fR > fV) R V 7 3 6 4 5 VCC R V VEE ORDERING INFORMATION Device Package Shipping† MCH12140DG SOIC−8 (Pb−Free) SOIC−8 (Pb−Free) 98 Units / Tube SOIC−8 (Pb−Free) 2500 / Tape & Reel MCK12140DG Figure 1. Logic Diagram MCK12140DR2G For proper operation, the input edge rate of the R and V inputs should be less than 5.0 ns. May, 2021 − Rev. 10 8 2 D (fV > fR) D (fV > fR) © Semiconductor Components Industries, LLC, 2006 1 (Top View) S S Q x140 ALYW G 1 98 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MCH12140/D MCH12140, MCK12140 Table 1. TRUTH TABLE* Input Output Input Output R V U D U D R V U D U D 0 0 1 0 0 1 1 1 X X X X X X X X X X X X X X X X 1 1 1 1 1 0 1 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 1 0 1 1 1 1 1 0 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 0 1 1 1 1 0 0 0 1 1 0 1 1 1 0 0 1 *This is not strictly a functional table; i.e., it does not cover all possible modes of operation. However, it gives a sufficient number of tests to ensure that the device will function properly. Table 2. H−SERIES DC CHARACTERISTICS (VEE = VEE(min) − VEE(max); VCC = GND (Note 1), unless otherwise noted.) −40°C Symbol Characteristic 0°C 25°C 70°C Min Max Min Max Min Max Min Max Unit VOH Output HIGH Voltage −1080 −890 −1020 −840 −980 −810 −910 −720 mV VOL Output LOW Voltage −1950 −1650 −1950 −1630 −1950 −1630 −1950 −1595 mV VIH Input HIGH Voltage −1230 −890 −1170 −840 −1130 −810 −1060 −720 mV VIL Input LOW Voltage −1950 −1500 −1950 −1480 −1950 −1480 −1950 −1445 mV IIL Input LOW Current 0.5 − 0.5 − 0.5 − 0.3 − mA Table 3. K−SERIES DC CHARACTERISTICS (VEE = VEE(min) − VEE(max); VCC = GND (Note 2), unless otherwise noted.) −40°C 0°C to 70°C Min Typ Max Min Typ Max Condition Unit VOH Output HIGH Voltage −1085 −1005 −880 −1025 −955 −880 VIN = VIH(max) mV VOL Output LOW Voltage −1830 −1695 −1555 −1810 −1705 −1620 or VIL(min) mV VOHA Output HIGH Voltage −1095 − − −1035 − − VIN = VIH(min) mV VOLA Output LOW Voltage − − −1555 − − −1610 or VIL(max) mV VIH Input HIGH Voltage −1165 − −880 −1165 − −880 − mV VIL Input LOW Voltage −1810 − −1475 −1810 − −1475 − mV IIL Input LOW Current 0.5 − − 0.5 − − VIN = VIL(max) mA Symbol Characteristic www.onsemi.com 2 MCH12140, MCK12140 Table 4. MAXIMUM RATINGS Symbol Value Unit VEE Power Supply (VCC = 0 V) −8.0 to 0 VDC VI Input Voltage (VCC = 0 V) 0 to −6.0 VDC Iout Output Current 50 100 mA TA Operating Temperature Range −40 to +70 °C Operating Range (Note 3) −5.7 to −4.2 V VEE Rating Continuous Surge Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: ESD data available upon request. 1. 10H circuits are designed to meet the DC specifications shown in the table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500 lfpm is maintained. Outputs are terminated through a 50 W resistor to −2.0 V except where otherwise specified on the individual data sheets. 2. This table replaces the three tables traditionally seen in ECL 100 K data books. The same DC parameter values at VEE = −4.5 V now apply across the full VEE range of −4.2 V to −5.5 V. Outputs are terminated through a 50 W resistor to −2.0 V except where otherwise specified on the individual data sheets. 3. Parametric values specified at: H−Series: −4.20 V to −5.50 V K−Series: −4.94 V to −5.50 V Table 5. DC CHARACTERISTICS (VEE = VEE(min) − VEE(max); VCC = GND, unless otherwise noted.) −40°C 0°C 25°C 70°C Min Typ Max Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current H K − − 45 45 − − 38 38 45 45 52 52 38 38 45 45 52 52 38 42 45 50 52 58 mA VEE Power Supply Voltage H K −4.75 −4.20 −5.2 −4.5 −5.5 −5.5 −4.75 −4.20 −5.2 −4.5 −5.5 −5.5 −4.75 −4.20 −5.2 −4.5 −5.5 −5.5 −4.75 −4.20 −5.2 −4.5 −5.5 −5.5 V − − 150 − − 150 − − 150 − − 150 mA Symbol IIH Characteristic Input HIGH Current NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Table 6. AC CHARACTERISTICS (VEE = VEE(min) − VEE(max); VCC = GND, unless otherwise noted.) −40°C Symbol Characteristic 0°C 25°C 70°C Min Typ Max Min Typ Max Min Typ Max Min Typ Max Unit − 800 − 650 800 − 650 800 − 650 800 − − FMAX Maximum Toggle Frequency tPLH tPHL Propagation Delay−to−Output R, V to D, U 250 375 500 250 375 500 250 375 500 250 375 500 tr tf Output Rise/Fall Times Q (20 to 80%) − 225 − 100 225 350 100 225 350 100 225 350 ps ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. www.onsemi.com 3 MCH12140, MCK12140 APPLICATIONS INFORMATION R lags V in phase The 12140 is a high speed digital circuit used as a phase When the R and V inputs are equal in frequency and the comparator in an analog phase-locked loop. The device phase of R lags that of V the U output will stay HIGH while determines the “lead” or “lag” phase relationship and time the D output will pulse from HIGH to LOW. The magnitude difference between the leading edges of a VCO (V) signal of the pulse will be proportional to the phase difference and a Reference (R) input. Since these edges occur only once between the V and R inputs reaching a minimum 50% duty per cycle, the detector has a range of ±2p radians. cycle under a 180° out of phase condition. The signal on D The operation of the 12140 can best be described using the indicates to the VCO to decrease in frequency to bring the plots of Figure 2. Figure 2 plots the average value of U, D loop into lock. and the difference between U and D versus the phase difference between the V and R inputs. V frequency > R frequency There are four potential relationships between V and R: R When the frequency of V is greater than that of R the lags or leads V and the frequency of R is less than or greater 12140 behaves in a similar fashion as above. Again the than the frequency of V. Under these four conditions the signal on D indicates that the VCO frequency must be 12140 will function as follows: decreased to bring the loop into lock. Fv > Fr −2p R lags V U −p R leads V p Fv < Fr 2p R leads V in phase When the R and V inputs are equal in frequency and the phase of R leads that of V the D output will stay HIGH while the U output pulses from HIGH to LOW. The magnitude of the pulse will be proportional to the phase difference between the V and R inputs reaching a minimum 50% duty cycle under a 180° out of phase condition. The signal on U indicates to the VCO to increase in frequency to bring the loop into lock. VOH VOH − VOL 2 D VOH −2p −p p 2p U−D −2p −p VOH − VOL 2 V frequency < R frequency When the frequency of V is less than that of R the 12140 behaves in a similar fashion as above. Again the signal on U indicates that the VCO frequency must be decreased to bring the loop into lock. From Figure 2 when V and R are at the same frequency and in phase the value of U − D is zero thus providing a zero error voltage to the VCO. This situation indicates the loop is in lock and the 12140 action will maintain the loop in its locked state. VOH − VOL 2 p 2p VOL − VOH 2 Figure 2. Average Output Voltage vs. Phase Difference MECL is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK 8 1 SCALE 1:1 −X− DATE 16 FEB 2011 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S 8 8 1 1 IC 4.0 0.155 XXXXX A L Y W G IC (Pb−Free) = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package XXXXXX AYWW 1 1 Discrete XXXXXX AYWW G Discrete (Pb−Free) XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 1.270 0.050 SCALE 6:1 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 8 8 XXXXX ALYWX G XXXXX ALYWX 1.52 0.060 0.6 0.024 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 7.0 0.275 DIM A B C D G H J K M N S mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SOIC−8 NB CASE 751−07 ISSUE AK DATE 16 FEB 2011 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER STYLE 2: PIN 1. COLLECTOR, DIE, #1 2. COLLECTOR, #1 3. COLLECTOR, #2 4. COLLECTOR, #2 5. BASE, #2 6. EMITTER, #2 7. BASE, #1 8. EMITTER, #1 STYLE 3: PIN 1. DRAIN, DIE #1 2. DRAIN, #1 3. DRAIN, #2 4. DRAIN, #2 5. GATE, #2 6. SOURCE, #2 7. GATE, #1 8. SOURCE, #1 STYLE 4: PIN 1. ANODE 2. ANODE 3. ANODE 4. ANODE 5. ANODE 6. ANODE 7. ANODE 8. COMMON CATHODE STYLE 5: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. DRAIN 5. GATE 6. GATE 7. SOURCE 8. SOURCE STYLE 6: PIN 1. SOURCE 2. DRAIN 3. DRAIN 4. SOURCE 5. SOURCE 6. GATE 7. GATE 8. SOURCE STYLE 7: PIN 1. INPUT 2. EXTERNAL BYPASS 3. THIRD STAGE SOURCE 4. GROUND 5. DRAIN 6. GATE 3 7. SECOND STAGE Vd 8. FIRST STAGE Vd STYLE 8: PIN 1. COLLECTOR, DIE #1 2. BASE, #1 3. BASE, #2 4. COLLECTOR, #2 5. COLLECTOR, #2 6. EMITTER, #2 7. EMITTER, #1 8. COLLECTOR, #1 STYLE 9: PIN 1. EMITTER, COMMON 2. COLLECTOR, DIE #1 3. COLLECTOR, DIE #2 4. EMITTER, COMMON 5. EMITTER, COMMON 6. BASE, DIE #2 7. BASE, DIE #1 8. EMITTER, COMMON STYLE 10: PIN 1. GROUND 2. BIAS 1 3. OUTPUT 4. GROUND 5. GROUND 6. BIAS 2 7. INPUT 8. GROUND STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 12: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN STYLE 15: PIN 1. ANODE 1 2. ANODE 1 3. ANODE 1 4. ANODE 1 5. CATHODE, COMMON 6. CATHODE, COMMON 7. CATHODE, COMMON 8. CATHODE, COMMON STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 STYLE 17: PIN 1. VCC 2. V2OUT 3. V1OUT 4. TXE 5. RXE 6. VEE 7. GND 8. ACC STYLE 18: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 19: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. MIRROR 2 7. DRAIN 1 8. MIRROR 1 STYLE 20: PIN 1. SOURCE (N) 2. GATE (N) 3. SOURCE (P) 4. GATE (P) 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN STYLE 21: PIN 1. CATHODE 1 2. CATHODE 2 3. CATHODE 3 4. CATHODE 4 5. CATHODE 5 6. COMMON ANODE 7. COMMON ANODE 8. CATHODE 6 STYLE 22: PIN 1. I/O LINE 1 2. COMMON CATHODE/VCC 3. COMMON CATHODE/VCC 4. I/O LINE 3 5. COMMON ANODE/GND 6. I/O LINE 4 7. I/O LINE 5 8. COMMON ANODE/GND STYLE 23: PIN 1. LINE 1 IN 2. COMMON ANODE/GND 3. COMMON ANODE/GND 4. LINE 2 IN 5. LINE 2 OUT 6. COMMON ANODE/GND 7. COMMON ANODE/GND 8. LINE 1 OUT STYLE 24: PIN 1. BASE 2. EMITTER 3. COLLECTOR/ANODE 4. COLLECTOR/ANODE 5. CATHODE 6. CATHODE 7. COLLECTOR/ANODE 8. COLLECTOR/ANODE STYLE 25: PIN 1. VIN 2. N/C 3. REXT 4. GND 5. IOUT 6. IOUT 7. IOUT 8. IOUT STYLE 26: PIN 1. GND 2. dv/dt 3. ENABLE 4. ILIMIT 5. SOURCE 6. SOURCE 7. SOURCE 8. VCC STYLE 29: PIN 1. BASE, DIE #1 2. EMITTER, #1 3. BASE, #2 4. EMITTER, #2 5. COLLECTOR, #2 6. COLLECTOR, #2 7. COLLECTOR, #1 8. COLLECTOR, #1 STYLE 30: PIN 1. DRAIN 1 2. DRAIN 1 3. GATE 2 4. SOURCE 2 5. SOURCE 1/DRAIN 2 6. SOURCE 1/DRAIN 2 7. SOURCE 1/DRAIN 2 8. GATE 1 DOCUMENT NUMBER: DESCRIPTION: 98ASB42564B SOIC−8 NB STYLE 27: PIN 1. ILIMIT 2. OVLO 3. UVLO 4. INPUT+ 5. SOURCE 6. SOURCE 7. SOURCE 8. DRAIN STYLE 28: PIN 1. SW_TO_GND 2. DASIC_OFF 3. DASIC_SW_DET 4. GND 5. V_MON 6. VBULK 7. VBULK 8. VIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
MCK12140DR2G 价格&库存

很抱歉,暂时无法提供与“MCK12140DR2G”相匹配的价格&库存,您可以联系我们找货

免费人工找货