MCR218-6G

MCR218-2G, MCR218-4G, MCR218-6G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. www.onsemi.com SCRs 8 AMPERES RMS 50 thru 400 VOLTS Features • Glass-Passivated Junctions • Blocking Voltage to 400 Volts • TO-220 Construction − Low Thermal Resistance, High Heat G A Dissipation and Durability C MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = *40 to 125°C, Gate Open) MCR218−2G MCR218−4G MCR218−6G VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 70°C) IT(RMS) 8.0 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2 t 26 A2s PGM 5.0 W PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 70°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Value MARKING DIAGRAM Unit V 4 50 200 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 2 TO−220AB CASE 221A−09 STYLE 3 3 A Y WW MCR218x G AKA AY WW MCR218x−G AKA = Assembly Location = Year = Work Week = Device Code x = 2, 4 or 6 = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MCR218−2G TO220AB (Pb−Free) 500 Units/Bulk MCR218−4G TO220AB (Pb−Free) 500 Units/Bulk MCR218−6G TO220AB (Pb−Free) 500 Units/Bulk *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: MCR218/D MCR218−2G, MCR218−4G, MCR218−6G THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Case Max Unit RqJC 2.0 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit − − − − 10 2.0 mA mA OFF CHARACTERISTICS IDRM, IRRM Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C (VAK = Rated VDRM or VRRM, Gate Open) TJ = 125°C ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 16 A Peak) VTM − 1.5 1.8 V Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) IGT − 10 25 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) VGT − − 1.5 V Gate Non−Trigger Voltage (Rated 12 V, RL = 100 Ohms, TJ = 125°C) VGD 0.2 − − V IH − 16 30 mA dv/dt − 100 − V/ms Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 1.0 ms, Duty Cycle ≤ 2%. Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − www.onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) MCR218−2G, MCR218−4G, MCR218−6G α α = CONDUCTION ANGLE 105 95 dc 85 α = 30° 75 0 60° 90° 120° 180° 12 α dc α = Conduction Angle 9.0 180° 120° 60° 6.0 90° α = 30° 3.0 0 0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVG. ON‐STATE CURRENT (AMPS) Figure 1. Current Derating Figure 2. On−State Power Dissipation 2 3 4 5 6 7 8 3.0 2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 0.4 0.3 -60 15 IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS) 1 -40 -20 0 20 40 60 80 100 120 140 1.0 VD = 12 Vdc 1.0 0.9 0.7 0.5 0.4 0.3 -60 -40 -20 0 20 60 80 100 Figure 4. Typical Gate Trigger Voltage versus Temperature 3.0 2.0 VD = 12 Vdc 1.5 1.0 0.9 0.7 0.5 -20 40 TJ, JUNCTION TEMPERATURE (°C) 4.0 -40 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Temperature www.onsemi.com 3 8.0 1.2 Figure 3. Typical Gate Trigger Current versus Temperature 0.4 -60 7.0 1.3 TJ, JUNCTION TEMPERATURE (°C) I H , NORMALIZED HOLDING CURRENT (mA) I GT , NORMALIZED GATE TRIGGER CURRENT (mA) P(AV), AVERAGE ON‐STATE POWER DISSIPATION (WATTS) 115 V GT , NORMALIZED GATE TRIGGER VOLTAGE ° TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (C) 125 120 140 120 140 MCR218−2G, MCR218−4G, MCR218−6G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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