DATA SHEET
www.onsemi.com
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
MJD112 (NPN),
MJD117 (PNP)
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
DPAK
CASE 369C
DPAK−3
CASE 369D
MARKING DIAGRAMS
AYWW
J11xG
DPAK
A
Y
WW
x
G
YWW
J11xG
DPAK−3
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the onsemi Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
May, 2022 − Rev. 14
1
Publication Order Number:
MJD112/D
MJD112 (NPN), MJD117 (PNP)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector−Emitter Voltage
Collector Current
Continuous
Peak
IC
Base Current
IB
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction Temperature Range
TJ, Tstg
2
4
50
20
0.16
1.75
0.014
−65 to +150
Adc
mAdc
W
W/°C
W
W/°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
71.4
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
www.onsemi.com
2
MJD112 (NPN), MJD117 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
100
−
−
20
−
20
−
2
−
10
−
2
500
1000
200
−
12,000
−
−
−
2
3
−
4
−
2.8
25
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Collector−Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter−Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
−
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 Mhz)
MJD117, NJVMJD117T4G
MJD112, NJVMJD112G, NJVMJD112T4G
Cob
pF
−
−
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
www.onsemi.com
3
MHz
200
100
MJD112 (NPN), MJD117 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
≈8k
D1
≈ 60
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
tf
1
0.8
tr
0.6
0.4
+4V
25 ms
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.1
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
0.2
0.2
0.1
0.03
0.4 0.6
0.2
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 2. Switching Times
D = 0.5
0.3
0.1
0.07
0.05
td @ VBE(off) = 0 V
PNP
NPN
Figure 1. Switching Times Test Circuit
1
0.7
0.5
IB1 = IB2
TJ = 25°C
2
t, TIME (s)
μ
RB
51
VCC = 30 V
IC/IB = 250
ts
RC SCOPE
TUT
V2
APPROX
+8 V
0
V1
APPROX
-12 V
4
VCC
-30 V
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.01
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
Figure 3. Thermal Response
www.onsemi.com
4
20
30
50
100
200 300
500
1000
MJD112 (NPN), MJD117 (PNP)
TA TC
2.5 25
10
7
5
3
2
100ms
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
ACTIVE−REGION SAFE−OPERATING AREA
500ms
1
0.7
0.5
0.3
0.2
5ms
1ms
dc
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
2
3
5
7
10
20
30
50
70 100
200
2 20
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
TC
125
15
Figure 5. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
C, CAPACITANCE (pF)
TC = 25°C
100
70
50
Cob
30
Cib
20
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
www.onsemi.com
5
10
20
40
MJD112 (NPN), MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112
PNP MJD117
6k
6k
VCE = 3 V
4k
4k
3k
3k
2k
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
25°C
1k
800
-55°C
600
400
300
0.04 0.06
0.1
0.4 0.6
1
0.2
IC, COLLECTOR CURRENT (AMP)
2
25°C
2k
1k
800
-55°C
600
400
300
0.04 0.06
4
VCE = 3 V
TC = 125°C
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
3.4
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
TJ = 125°C
3 IC =
0.5 A
2.6
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
3.4
TJ = 125°C
3
2.6
IC =
0.5 A
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
IB, BASE CURRENT (mA)
1
2
5
10
20
50
100
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1
2
0.2
0.04 0.06
4
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On Voltages
www.onsemi.com
6
2
4
MJD112 (NPN), MJD117 (PNP)
PNP MJD117
+0.8
0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
NPN MJD112
*APPLIED FOR IC/IB < hFE/3
-0.8
25°C TO 150°C
-1.6
-2.4
*qVC FOR VCE(sat)
-55°C TO 25°C
-3.2
-4
25°C TO 150°C
qVC FOR VBE
-4.8
0.04 0.06
0.1
-55°C TO 25°C
0.4 0.6
1
0.2
IC, COLLECTOR CURRENT (AMP)
2
+0.8
0
*APPLIES FOR IC/IB < hFE/3
25°C TO 150°C
-0.8
-1.6
*qVC FOR VCE(sat)
-55°C TO 25°C
-2.4
25°C TO 150°C
-3.2
-4
-4.8
0.04 0.06
4
-55°C TO 25°C
qVB FOR VBE
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 10. Temperature Coefficients
105
104
103
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 -0.4 -0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
104
103
REVERSE
FORWARD
VCE = 30 V
102
101
TJ = 150°C
100°C
100
25°C
10-1
+0.6 +0.4 +0.2
0 -0.2 -0.4 -0.6 -0.8 -1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 11. Collector Cut−Off Region
COLLECTOR
PNP
COLLECTOR
NPN
BASE
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 12. Darlington Schematic
www.onsemi.com
7
-1.2 -1.4
MJD112 (NPN), MJD117 (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD112G
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD112G*
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD112−1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD112RLG
DPAK
(Pb−Free)
369C
1,800 Tape & Reel
MJD112T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
NJVMJD112T4G*
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
MJD117G
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD117−1G
DPAK−3
(Pb−Free)
369D
75 Units / Rail
MJD117RLG
DPAK
(Pb−Free)
369C
1,800 Tape & Reel
MJD117T4G
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
NJVMJD117T4G*
DPAK
(Pb−Free)
369C
2,500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
8
MJD112 (NPN), MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
b3
B
c2
Z
D
1
L4
C
A
4
L3
2
NOTE 7
c
SIDE VIEW
b
TOP VIEW
H
DETAIL A
3
b2
e
0.005 (0.13)
M
GAUGE
PLANE
C
Z
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
H
L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD112 (NPN), MJD117 (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
www.onsemi.com
10
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
