MJE5850, MJE5851,
MJE5852
Switch-mode Series PNP
Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
switch−mode applications.
Features
•
•
•
•
•
•
•
•
•
•
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn−Off Times
Operating Temperature Range −65 to + 150_C
100_C Performance Specified for:
♦ Reversed Biased SOA with Inductive Loads
♦ Switching Times with Inductive Loads
♦ Saturation Voltages
♦ Leakage Currents
Complementary to the MJE13007 Series
These Devices are Pb−Free and are RoHS Compliant*
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8 AMPERE
PCP SILICON
POWER TRANSISTORS
300−350−400 VOLTS
80 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
MAXIMUM RATINGS
Rating
Symbol
Value
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
VCEO(sus)
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
VCEV
Emitter Base Voltage
VEB
6.0
Vdc
IC
8.0
Adc
ICM
16
Adc
IB
4.0
Adc
Base Current − Peak (Note 1)
IBM
8.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
80
0.640
W
W/_C
– 65 to 150
_C
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Base Current − Continuous (Note 1)
Operating and Storage Junction
Temperature Range
Vdc
300
350
400
1
Vdc
350
400
450
TJ, Tstg
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
January, 2015 − Rev. 7
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
© Semiconductor Components Industries, LLC, 2015
TO−220
CASE 221A−09
STYLE 1
Unit
1
MJE585xG
AY WW
MJE585x =
G
A
Y
WW
=
=
=
=
Device Code
x = 0, 1, or 2
Pb−Free Package
Assembly Location
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
MJE5850/D
MJE5850, MJE5851, MJE5852
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
RqJC
1.25
_C/W
TL
275
_C
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
MJE5850
MJE5851
MJE5852
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 W, TC = 100_C)
ICER
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
Vdc
300
350
400
−
−
−
−
−
−
−
−
−
−
0.5
2.5
−
−
3.0
−
−
1.0
mAdc
mAdc
mAdc
SECOND BREAKDOWN
IS/b
See Figure 12
RBSOA
See Figure 13
Second Breakdown Collector Current with base forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 2.0 Adc, VCE = 5 Vdc)
(IC = 5.0 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 3.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
−
15
5
−
−
−
−
−
−
−
−
−
−
2.0
5.0
2.5
−
−
−
−
1.5
1.5
−
270
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Cob
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
tp = 50 ms, Duty Cycle ≤ 2%)
td
−
0.025
0.1
ms
tr
−
0.100
0.5
ms
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle ≤ 2%)
ts
−
0.60
2.0
ms
tf
−
0.11
0.5
ms
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 100_C)
tsv
−
0.8
3.0
ms
tc
−
0.4
1.5
ms
tfi
−
0.1
−
ms
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tsv
−
0.5
−
ms
tc
−
0.125
−
ms
tfi
−
0.1
−
ms
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: PW = 300 ms. Duty Cycle ≤ 2%
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2
MJE5850, MJE5851, MJE5852
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
200
TJ = 150°C
hFE , DC CURRENT GAIN
100
70
50
TJ = 25°C
30
20
VCE = 5 V
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
2.0
1.6
IC = 0.25 A
1.2
TJ = 25°C
0.4
0
0.01
0.02
1.6
1.6
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
IC/IB = 4
1.2
TJ = 150°C
TJ = 25°C
0.5 0.7 1.0
2.0 3.0
5.0 7.0
0.8
10
TJ = 25°C
TJ = 150°C
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter Voltage
10
3000
2000
TJ = 25°C
104
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (nA)
5.0
1.2
0
0.1
10
105
TJ = 150°C
103
100°C
102
101
REVERSE
FORWARD
VCE = 200 V
+0.2
+0.1
1000
Cib
500
Cob
200
100
50
25°C
100
2.0
0.1
0.2
0.5 1.0
IB, BASE CURRENT (AMPS)
IC/IB = 4
0.4
0.4
0.2 0.3
0.05
Figure 2. Collector Saturation Region
2.0
0
0.1
5.0 A
0.8
Figure 1. DC Current Gain
0.8
2.5 A
1.0 A
-0.4
0
-0.1
-0.2
-0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
30
0.1 0.2
-0.5
0.5 1.0
5.0 10 20 50 100 200 500 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
Figure 5. Collector Cutoff Region
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3
MJE5850, MJE5851, MJE5852
Table 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
+V
50 mF
+ 0.0025 mF
-10 V
0.2 mF
1
INPUT
CONDITIONS
20
0.1 mF
INPUT
+V
0
PW Varied to Attain
IC = 100 mA
1W2
MJE15028W
0.1 mF
500 W
1/2 W
CIRCUIT
VALUES
Lcoil = 180 mH
Rcoil = 0.05 W
VCC = 20 V
TEST CIRCUITS
IN
PUT
SEE ABOVE FOR
DETAILED CONDITIONS
1N4937
OR
EQUIVALENT
Vclamp
2
TURN−OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
+
-V
VCC = 250 V
RL = 62 W
Pulse Width = 10
ms
Vclamp = 250 V
RB adjusted to attain desired IB1
OUTPUT WAVEFORMS
RESISTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
IC
TUT
IB1 adjusted to
obtain the forced
hFE desired
50 mF
−V adjusted to obtain desired IB1
+ V adjusted to obtain desired VBE(off)
1
IB1
1
-
INDUCTIVE TEST CIRCUIT
2
1N4934
0.2 mF
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7 W
1
0.0033 mF
500 W
1/2 W
50 W
2W
TURN−ON TIME
1/2 W
500 W
1/2 W
0
2
0.1 mF
MJE15029
500 W
Rcoil
ICM
tf
Clamped
t
Lcoil
t1 ≈
tf
t1
t2 ≈
VCC
VCE
VCEM
RS =
0.1 W
Vclamp
t
TIM
E
t2
Lcoil (ICM)
TUT
VCC
RL
1
Lcoil (ICM)
2
VCC
VClamp
Test Equipment
Scope — Tektronix
475 or Equivalent
1.0
3.0
IC = 4 A
IC/IB = 4
TJ = 25°C
10% 2%
ICM ICM
tc
tfi
VCE
tsr
trv
tti
IC
90%
ICM
ICM
VCEM
t c , CROSSOVER TIME (μs)
IB
10%
90% IB1 VCEM
0.8
2.7
2.4
2.1
tsv 100°C
0.6
1.8
tsv 25°C
1.5
0.4
1.2
0.9
0.2
0.6
tc 25°C
Vclamp
0.3
0
TIME
0
1
2
3
4
5
6
7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 7. Inductive Switching Measurements
Figure 8. Inductive Switching Times
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4
8
0
t sv, VOLTAGE STORAGE TIME (μs)
tc 100°C
MJE5850, MJE5851, MJE5852
SWITCHING TIMES NOTE
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN−222A:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10 −90% VCEM
tfi = Current Fall Time, 90 −10% ICM
tti = Current Tail, 10 −2% ICM
tc = Crossover Time,10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform
is shown in Figure 7 to aid on the visual identity of these
terms.
1.0
0.7
0.5
10
VCC = 250 V
IC/IB = 4
TJ = 25°C
0.3
0.7
ts
t, TIME (s)
μ
t, TIME (s)
μ
0.2
tr
0.1
0.07
0.05
0.4
VCC = 250 V
IC/IB = 4
VBE(off) = 5 V
TJ = 25°C
0.3
0.2
0.03
td
0.02
tf
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.01
0.1
1
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
0.1
0.3
0.5 0.7 1.0
2.0
4.0
7.0 10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Turn−On Switching Times
Figure 10. Turn−Off Switching Time
D = 0.5
0.3
0.2
0.2
0.1
ZqJC(t) = r(t) RqJC
RqJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
t, TIME (ms)
10
20
Figure 11. Typical Thermal Response [ZqJC(t)]
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5
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1k
MJE5850, MJE5851, MJE5852
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
Safe Operating Area Information
Forward Bias
IC, COLLECTOR CURRENT (AMPS)
20
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 12 may be found at
any case temperature by using the appropriate curve on
Figure 15.
TJ(pk) may be calculated from the data in Figure 11. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
100 ms
10
5.0
5 ms
2.0
TC =
25°C
1.0
1 ms
dc
0.5
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMITMJE5850
MJE5851
MJE5852
200 300 400 500
7.0 10
20
40
70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.05
0.02
Figure 12. Maximum Forward Bias
Safe Operating Area
IC, COLLECTOR CURRENT (AMPS)
8.0
Reverse Bias
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 13 gives the RBSOA
characteristics.
7.0
IC/IB = 4
VBE(off) = 2 V to 8 V
TJ = 100°C
6.0
5.0
4.0
MJE5850
MJE5851
MJE5852
3.0
2.0
1.0
0
200
100
300
400
500
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. RBSOA, Maximum Reverse Bias
Safe Operating Area
3.5
1
IB2(pk) (AMPS)
POWER DERATING FACTOR
IC = 4 A
IB1 = 1 A
TJ = 25°C
3.0
2.5
2.0
1.5
1.0
0
2
4
6
0.6
THERMAL
DERATING
0.4
0.2
0
8
SECOND BREAKDOWN
DERATING
0.8
20
40
60
80
100
120
140
VBE(off), BASE-EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (°C)
Figure 14. Peak Reverse Base Current
Figure 15. Forward Bias Power Derating
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160
MJE5850, MJE5851, MJE5852
ORDERING INFORMATION
Package
Shipping
MJE5850G
Device
TO−220
(Pb−Free)
50 Units / Rail
MJE5851G
TO−220
(Pb−Free)
50 Units / Rail
MJE5852G
TO−220
(Pb−Free)
50 Units / Rail
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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