DATA SHEET
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Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
COLLECTOR
2,4
MJE18008
The MJE18008 have an applications specific state−of−the−art die
designed for use in 220 V line−operated switch−mode Power supplies
and electronic light ballasts.
1
BASE
Features
3
EMITTER
• Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot−to−Lot
Two Package Choices: Standard TO−220 or Isolated TO−220
These Devices are Pb−Free and are RoHS Compliant*
♦
4
♦
•
•
•
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
9.0
Vdc
Collector Current
− Continuous
Collector Current
− Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 1 Per Figure 22b
Test No. 1 Per Figure 22c
(for 1 sec, R.H. < 30%, TA = 25_C)
IC
8.0
Adc
ICM
16
Adc
IB
4.0
Adc
IBM
8.0
Adc
VISOL
PD
125
1.0
W
W/_C
TJ, Tstg
−65 to 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.0
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
260
_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
October, 2022 − Rev. 11
MARKING DIAGRAM
MJE18008G
AYWW
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
© Semiconductor Components Industries, LLC, 2015
3
TO−220AB
CASE 221A−09
STYLE 1
V
4500
3500
1500
2
1
Device
MJE18008G
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJE18008/D
MJE18008
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified)
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
−
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
100
mAdc
Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
−
−
0.82
0.92
1.1
1.25
Vdc
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
VCE(sat)
−
−
−
−
0.3
0.3
0.35
0.4
0.6
0.65
0.7
0.8
hFE
14
−
6.0
5.0
11
11
10
−
28
9.0
8.0
15
16
20
34
−
−
−
−
−
−
−
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
(TC = 125_C)
(TC = 125_C)
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Collector Cutoff Current (VCE = 800 V, VEB = 0)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
ON CHARACTERISTICS
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
−
13
−
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
−
1750
2500
pF
VCE(dsat)
−
−
5.5
11.5
−
−
Vdc
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising IB1 reaches 90% of
final IB1
(see Figure 18)
(IC = 2.0 Adc
IB1 = 200 mAdc
VCC = 300 V)
1.0 ms
(TC = 125°C)
3.0 ms
(TC = 125°C)
−
−
3.5
6.5
−
−
(IC = 5.0 Adc
IB1 = 1.0 Adc
VCC = 300 V)
1.0 ms
(TC = 125°C)
−
−
11.5
14.5
−
−
3.0 ms
(TC = 125°C)
−
−
2.4
9.0
−
−
ton
−
−
200
190
300
−
ns
toff
−
−
1.2
1.5
2.5
−
ms
ton
−
−
100
250
180
−
ns
toff
−
−
1.6
2.0
2.5
−
ms
tfi
−
−
100
120
180
−
ns
tsi
−
−
1.5
1.9
2.75
−
ms
tc
−
−
250
230
350
−
ns
tfi
−
−
85
135
150
−
ns
tsi
−
−
2.0
2.6
3.2
−
ms
tc
−
−
210
250
300
−
ns
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
Turn−Off Time
Turn−On Time
(TC = 125°C)
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
Turn−Off Time
(TC = 125°C)
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
Storage Time
(TC = 125°C)
Crossover Time
Fall Time
(TC = 125°C)
(TC = 125°C)
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
Storage Time
Crossover Time
(TC = 125°C)
(TC = 125°C)
(TC = 125°C)
3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
4. Proper strike and creepage distance must be provided.
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MJE18008
TYPICAL STATIC CHARACTERISTICS
100
VCE = 1 V
TJ = 125°C
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
100
TJ = 25°C
10
TJ = -20°C
1
0.01
1
0.1
TJ = 25°C
10
TJ = -20°C
1
0.01
10
VCE = 5 V
TJ = 125°C
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
10
1.5
IC = 1 A
1
3A
5A
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
TJ = 25°C
8 A 10 A
0.5
1
IC/IB = 10
0.1
IC/IB = 5
0
0.01
0.1
1
0.01
0.01
10
1
10
IC COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
10000
1.2
TJ = 25°C
f = 1 MHz
Cib
1.1
1000
1
C, CAPACITANCE (pF)
V BE , VOLTAGE (VOLTS)
0.1
IB, BASE CURRENT (AMPS)
1.3
0.9
0.8
0.7 TJ = 25°C
0.6
100
Cob
10
IC/IB = 5
IC/IB = 10
0.5 TJ = 125°C
0.4
0.01
TJ = 25°C
TJ = 125°C
0.1
1
1
10
1
10
100
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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1000
MJE18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 FOR ALL SWITCHING) (continued)
1500
4500
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
IB(off) = IC/2
VCC = 300 V
PW = 20 ms
3500
1000
3000
IC/IB = 5
IC/IB = 10
t, TIME (ns)
TJ = 125°C
t, TIME (ns)
TJ = 25°C
TJ = 125°C
IC/IB = 5
4000
TJ = 25°C
500
2500
2000 IC/IB = 10
1500
1000
500
0
0
0
1
3
2
6
5
4
7
1
8
Figure 8. Resistive Switching, toff
8
5000
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
1500
1000
2
3
3500
IC = 2 A
3000
2500
2000
1500
1000
TJ = 25°C
TJ = 125°C
1
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
4000
2000
500
TJ = 25°C
TJ = 125°C
4500
t si , STORAGE TIME (ns)
IC/IB = 5
2500
t, TIME (ns)
7
6
Figure 7. Resistive Switching, ton
3000
500
IC/IB = 10
4
5
6
7
0
8
IC = 4.5 A
3
4
6
5
7
8
9
10
12
11
13
14
IC COLLECTOR CURRENT (AMPS)
hFE, FORCED GAIN
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
15
300
400
TJ = 25°C
TJ = 125°C
350
t, TIME (ns)
250
tfi
200
150
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
100
50
0
1
2
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
250
tc
300
t, TIME (ns)
5
4
IC, COLLECTOR CURRENT (AMPS)
3500
0
3
2
IC, COLLECTOR CURRENT (AMPS)
tfi
200
tc
150
100
TJ = 25°C
TJ = 125°C
3
4
5
6
7
50
8
1
2
3
4
5
6
7
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
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8
MJE18008
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching) (continued)
160
400
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
t fi , FALL TIME (ns)
140
IC = 2 A
130
120
110
100
IC = 4.5 A
90
80
60
3
4
6
5
300
250
200
150
IC = 4.5 A
100
TJ = 25°C
TJ = 125°C
70
TJ = 25°C
TJ = 125°C
50
7
8
9
10
11
12
13
14
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 mH
IC = 2 A
350
TC , CROSSOVER TIME (ns)
150
15
3
4
5
6
7
8
9
10
11
12
13
14
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
15
GUARANTEED SAFE OPERATING AREA INFORMATION
100
9
5 ms
10 ms
1 ms
1 ms
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
DC (MJE18008)
10
EXTENDED
SOA
1
DC (MJF18008)
0.1
0.01
10
100
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 mH
8
7
6
5
4
3
2
-5 V
1
VBE(off) = 0 V
0
1000
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
0,6
0,4
THERMAL DERATING
0,2
0,0
20
40
60
80
100
120
140
600
1000
800
200
400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Switching Safe
Operating Area
1,0
0,8
-1, 5 V
160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
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5
MJE18008
5
VCE
4
dyn 1 ms
3
2
dyn 3 ms
VOLTS
1
0
-1
90% IB
-2
1 ms
-3
-4
-5
0
3 ms
IB
1
2
3
4
TIME
5
6
7
8
Figure 18. Dynamic Saturation Voltage Measurements
10
9
90% IC
tfi
IC
8
tsi
7
6
tc
5
VCLAMP
10% IC
10% VCLAMP
4
IB
3
90% IB1
2
1
0
0
1
2
3
4
TIME
5
6
7
8
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3W
100 W
3W
IC PEAK
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
Iout
MPF930
+10 V
IB
A
IB2
50 W
RB2
MJE210
COMMON
500 mF
150 W
3W
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
-Voff
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
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6
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
MJE18008
TYPICAL THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
t, TIME (ms)
RqJC(t) = r(t) RqJC
RqJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
100
1000
Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18008
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
P(pk)
0.1
0.05
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
RqJC(t) = r(t) RqJC
RqJC = 2.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
SINGLE PULSE
0.1
1
10
100
1000
t, TIME (ms)
Figure 21. Typical Thermal Response (ZqJC(t)) for MJF18008
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7
10000
100000
MJE18008
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
0.099″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
LEADS
HEATSINK
HEATSINK
0.099″ MIN
0.110″ MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw−Mounted
Figure 23b. Clip−Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting
technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess
of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely
affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, onsemi
does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
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