MMBTA56WT1G

MMBTA56WT1 Driver Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV • Pb−Free Package is Available MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −80 −80 −4.0 −500 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 Machine Model − 400 V 1 BASE 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 −55 to +150 Unit mW °C/W °C SC−70 (SOT−323) CASE 419 STYLE 3 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MARKING DIAGRAM FM M G G 1 FM = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTA56WT1 MMBTA56WT1G Package SC−70 SC−70 (Pb−Free) Shipping† 3000/T ape & Reel 3000/T ape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 1 Publication Order Number: MMBTA56WT1/D MMBTA56WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCE = −60 Vdc, IB = 0) Collector Cutoff Current (VCB = −60 Vdc, IE = 0) (VCB = −80 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector−Emitter Saturation Voltage (IC = −100 mAdc, IB = −10 mAdc) Base−Emitter On Voltage (IC = −100 mAdc, VCE = −1.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 50 − MHz hFE 100 100 VCE(sat) VBE(on) − − − − −0.25 −1.2 Vdc Vdc − V(BR)CEO V(BR)EBO ICES ICBO − − − −0.1 −80 −4.0 − − − −0.1 Vdc Vdc mAdc mAdc Symbol Min Max Unit TURN−ON TIME −1.0 V VCC +40 V RL OUTPUT Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities RB * CS t 6.0 pF Vin 5.0 mF TURN−OFF TIME +VBB VCC +40 V 100 RB * CS t 6.0 pF 100 RL OUTPUT 5.0 ms +10 V 100 Figure 1. Switching Time Test Circuits http://onsemi.com 2 MMBTA56WT1 f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz 200 VCE = −2.0 V TJ = 25°C C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C 100 70 50 30 20 −2.0 −3.0 10 7.0 Cobo −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 5.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance 300 t, TIME (ns) 200 100 70 50 30 20 VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts I C , COLLECTOR CURRENT (mA) 1.0 k 700 500 −1.0 k −700 −500 −300 −200 −100 −70 −50 −30 −20 −10 −1.0 TA = 25°C TC = 25°C 1.0 s 100 ms 1.0 ms tf CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT td @ VBE(off) = −0.5 V −20 −30 −50 −70 −100 tr −200 −300 −500 10 −5.0 −7.0 −10 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Switching Time Figure 5. Active−Region Safe Operating Area 400 TJ = 125°C h FE , DC CURRENT GAIN 200 VCE = −1.0 V V, VOLTAGE (VOLTS) −1.0 TJ = 25°C VBE(sat) @ IC/IB = 10 −0.8 25°C −55°C −0.6 VBE(on) @ VCE = −1.0 V 100 80 60 −0.4 −0.2 VCE(sat) @ IC/IB = 10 −5.0 −10 −20 −50 −100 −200 −500 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −500 40 −0.5 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. “ON” Voltages http://onsemi.com 3 MMBTA56WT1 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C −0.8 IC = −50 mA IC = −100 mA IC = −250 mA IC = −500 mA R qVB , TEMPERATURE COEFFICIENT (mV/° C) −1.0 −0.8 −1.2 −0.6 −1.6 −2.0 RqVB for VBE −0.4 −0.2 IC = −10 mA −2.4 −2.8 −0.5 −1.0 −2.0 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −5.0 −10 −20 −50 −100 −200 −500 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base−Emitter Temperature Coefficient http://onsemi.com 4 MMBTA56WT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 HE 1 2 E b e DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 2.00 0.079 0.095 A 0.05 (0.002) A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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