MMUN2231LT1

MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features http://onsemi.com R1 PIN 1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) • Simplifies Circuit Design • Reduces Board Space and Component Count • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM A8x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 508 (Note 1) 311 (Note 2) 174 (Note 1) 208 (Note 2) −55 to +150 Unit mW °C/W °C/W °C/W °C A8x = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. Preferred devices are recommended choices for future use and best overall value. RqJA RqJL TJ, Tstg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad 2. FR−4 @ 1.0 x 1.0 inch pad © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 7 Publication Order Number: MMUN2211LT1/D MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 ICBO ICEO IEBO − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 − − nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 − 60 100 140 140 350 350 5.0 15 30 200 150 350 350 − − − − − − − − − − − − − − 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2238LT1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. VCE(sat) http://onsemi.com 2 MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k W) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 VOH − − − − − − − − − − − − − 4.9 − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k W) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k W) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k W) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k W) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k W) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 0.8 0.17 − − 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 1.0 0.21 − − 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 1.2 0.25 − − 1.2 0.185 0.56 kW Resistor Ratio R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (MILLIWATTS) 250 1 IC/IB = 10 TA = −25°C 25°C 75°C 200 0.1 150 100 RqJA= 625°C/W 0.01 50 0 −50 0 50 100 150 0.001 0 20 40 60 80 TA, AMBIENT TEMPERATURE (5°C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V Cob, CAPACITANCE (pF) TA = 75°C 25°C −25°C 100 3 4 Figure 2. VCE(sat) vs. IC f = 1 MHz lE = 0 A TA = 25°C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 75°C 10 25°C Vin, INPUT VOLTAGE (V) TA = −25°C 10 Figure 4. Output Capcitance VO = 0.2 V TA = −25°C 25°C 75°C 1 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 0.001 0.1 0 Vin, INPUT VOLTAGE (VOLTS) 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = −25°C 25°C 1000 VCE = 10 V TA = 75°C 0.1 75°C 100 25°C −25°C 0.01 − 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) vs. IC 4 f = 1 MHz lE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 Figure 8. DC Current Gain 75°C 25°C TA = −25°C Cob, CAPACITANCE (pF) 3 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 50 0.001 0 2 4 6 8 10 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 10. Output Current vs. Input Voltage TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 10 IC/IB = 10 TA = −25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C −25°C 1 100 0.1 0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA) 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) vs. IC 1 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 100 Figure 13. DC Current Gain 75°C 10 25°C TA = −25°C Cob, CAPACITANCE (pF) 0.8 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 15. Output Current vs. Input Voltage TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 300 VCE = 10 250 25°C 200 150 100 50 0 −25°C TA = 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz lE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 Figure 18. DC Current Gain 75°C 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 Figure 19. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 20. Output Current vs. Input Voltage TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB =10 hFE, DC CURRENT GAIN TA = 75°C 100 −25°C 25°C 1000 VCE = 10 V 0.1 TA = 75°C 25°C −25°C 0.01 10 0.001 4 8 12 16 20 24 28 IC, COLLECTOR CURRENT (mA) 1 0 25 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC 6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25°C 100 75°C 10 Figure 23. DC Current Gain VO = 5 V 25°C Cob, CAPACITANCE (pF) 1 TA = −25°C 0.1 0.01 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) TA = −25°C 75°C 1 25°C Figure 25. Output Current vs. Input Voltage 0.1 0 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 26. Output Voltage vs. Input Current http://onsemi.com 8 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN 75°C 25°C TA = −25°C 1000 0.1 75°C 25°C TA = −25°C 100 0.01 10 VCE = 10 V 1 2 7 12 17 22 27 32 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) 0.001 Figure 27. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 VR, REVERSE BIAS VOLTAGE (VOLTS) f = 1 MHz IE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C Figure 28. DC Current Gain TA = −25°C 10 1 0.1 25°C 0 2 4 6 VO = 5 V 8 0.01 Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 30. Output Current vs. Input Voltage TA = −25°C 25°C 1 75°C 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) 30 Figure 31. Input Voltage vs. Output Current http://onsemi.com 9 MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 10 MMUN2211LT1 Series ORDERING INFORMATION Device MMUN2211LT1 MMUN2211LT1G MMUN2211LT3 MMUN2211LT3G MMUN2112LT1 MMUN2212LT1G MMUN2213LT1 MMUN2213LT1G MMUN2214LT1 MMUN2214LT1G MMUN2215LT1 MMUN2215LT1G MMUN2216LT1 MMUN2216LT1G MMUN2230LT1 MMUN2230LT1G MMUN2231LT1 MMUN2231LT1G MMUN2232LT1 MMUN2232LT1G MMUN2233LT1 MMUN2233LT1G MMUN2234LT1 MMUN2234LT1G MMUN2234LT3 MMUN2234LT3G MMUN2238LT1 MMUN2238LT1G MMUN2241LT1 MMUN2241LT1G A8U A8R A8L A8K A8J A8H A8G A8F A8E A8D A8C A8B A8A Marking R1(k) 10 10 10 10 22 22 47 47 10 10 10 10 4.7 4.7 1.0 1.0 2.2 2.2 4.7 4.7 4.7 4.7 22 22 22 22 2.2 2.2 100 100 R2(k) 10 10 10 10 22 22 47 47 47 47 ∞ ∞ ∞ ∞ 1.0 1.0 2.2 2.2 4.7 4.7 47 47 47 47 47 47 ∞ ∞ ∞ ∞ Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 11 MMUN2211LT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. DIM A A1 b c D E e L HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 D 3 1 2 E HE e A b A1 L C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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