MMUN2231LT1G

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features http://onsemi.com R1 PIN 1 BASE (INPUT) R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) • Simplifies Circuit Design • Reduces Board Space and Component Count • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM A8x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature Range Symbol PD Max 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 508 (Note 1) 311 (Note 2) 174 (Note 1) 208 (Note 2) − 55 to +150 Unit mW °C/W °C/W °C/W °C A8x = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet. RqJA RqJL TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad 2. FR−4 @ 1.0 x 1.0 inch pad © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 11 Publication Order Number: MMUN2211LT1/D MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G ICBO ICEO IEBO − − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 − − nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2232LT1G MMUN2238LT1G MMUN2230LT1G MMUN2231LT1G MMUN2241LT1G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 − − − − − − − − − − − − − 60 100 140 140 350 350 5.0 15 30 200 150 350 350 − − − − − − − − − − − − − − − − − − − − − − − − − − Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 1 mA) (IC = 10 mA, IB = 5 mA) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MMUN2211LT1G MMUN2212LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2213LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2230LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2231LT1G MMUN2232LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G VOL Vdc − − − − − − − − − − − − − 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 0.8 0.8 0.8 0.17 − − 0.8 0.8 0.8 0.055 0.38 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 1.0 1.0 1.0 0.21 − − 1.0 1.0 1.0 0.1 0.47 − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc − − − − − − − − − − − − − 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 1.2 1.2 1.2 0.25 − − 1.2 1.2 1.2 0.185 0.56 − − kW (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor R1 Resistor Ratio R1/R2 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) PD, POWER DISSIPATION (MILLIWATTS) 250 200 1 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 150 100 50 0 −50 RqJA= 625°C/W 0.01 0 50 100 150 0.001 0 20 40 60 80 TA, AMBIENT TEMPERATURE (5°C) IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V Cob, CAPACITANCE (pF) TA = 75°C 25°C −25°C 100 3 4 Figure 2. VCE(sat) vs. IC f = 1 MHz lE = 0 A TA = 25°C 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 100 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 75°C 10 25°C Vin, INPUT VOLTAGE (V) TA = −25°C 10 Figure 4. Output Capcitance VO = 0.2 V TA = −25°C 25°C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10 75°C 1 0.001 0.1 0 Vin, INPUT VOLTAGE (VOLTS) 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = −25°C 25°C 1000 VCE = 10 V TA = 75°C 0.1 75°C 100 25°C −25°C 0.01 − 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) vs. IC 4 Cob, CAPACITANCE (pF) f = 1 MHz lE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 10 1 Figure 8. DC Current Gain 75°C 25°C TA = −25°C 3 2 0.1 1 0.01 VO = 5 V 0 2 4 6 8 10 Vin, INPUT VOLTAGE (VOLTS) 0 0 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 10. Output Current vs. Input Voltage TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 10 1000 IC/IB = 10 TA = −25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C −25°C 1 100 0.1 0.01 0 20 40 60 80 10 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC 1 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 100 Figure 13. DC Current Gain 75°C 10 1 0.1 25°C TA = −25°C Cob, CAPACITANCE (pF) 0.6 0.4 0.2 0 0 0.01 VO = 5 V 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 10 20 30 40 50 0.001 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 15. Output Current vs. Input Voltage TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) 1 IC/IB = 10 TA = −25°C 25°C 75°C 300 VCE = 10 250 25°C 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) −25°C TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 100 Figure 18. DC Current Gain 75°C 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 Figure 19. Output Capacitance 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Figure 20. Output Current vs. Input Voltage TA = −25°C 25°C 1 75°C 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75°C −25°C 0.01 1000 75°C TA = −25°C 25°C VCE = 10 V 0.1 25°C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C 10 1 0.1 0.01 TA = −25°C 25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 8 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2216LT1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 75°C TA = −25°C VCE = 10 V 0.1 −25°C 0.01 75°C 100 25°C 25°C 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = −25°C 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 9 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G 100 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75°C 25°C TA = −25°C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 10 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G 100 IC/IB = 10 75°C −25°C 0.01 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 0.1 25°C 10 75°C 25°C TA = −25°C VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 75°C 10 1 0.1 0.01 TA = −25°C 25°C VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 11 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2232LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB =10 1000 hFE, DC CURRENT GAIN VCE = 10 V TA = 75°C 0.1 TA = 75°C 25°C 100 −25°C 25°C −25°C 0.01 10 0.001 4 8 12 16 20 24 28 1 0 25 50 75 100 125 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) vs. IC 6 IC, COLLECTOR CURRENT (mA) 5 4 3 2 1 0 f = 1 MHz IE = 0 A TA = 25°C 100 75°C 10 Figure 43. DC Current Gain VO = 5 V 25°C Cob, CAPACITANCE (pF) 1 TA = −25°C 0.1 0 10 20 30 40 50 60 0.01 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 44. Output Capacitance 10 VO = 0.2 V TA = −25°C 75°C 1 25°C Figure 45. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) 0.1 0 10 20 IC, COLLECTOR CURRENT (mA) 30 Figure 46. Output Voltage vs. Input Current http://onsemi.com 12 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN 75°C 25°C TA = −25°C 1000 0.1 75°C 25°C 100 0.01 TA = −25°C 10 VCE = 10 V 2 7 12 17 22 27 32 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) vs. IC 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 60 f = 1 MHz IE = 0 A TA = 25°C IC, COLLECTOR CURRENT (mA) 100 75°C Figure 48. DC Current Gain TA = −25°C 10 1 0.1 25°C 0 2 4 6 VO = 5 V 8 0.01 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 49. Output Capacitance 10 VO = 0.2 V Figure 50. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) TA = −25°C 25°C 1 75°C 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) 30 Figure 51. Input Voltage vs. Output Current http://onsemi.com 13 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G 1000 IC/IB = 10 hFE, DC CURRENT GAIN 75°C 100 TA = −25°C VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 VCE = 10 V 0.1 75°C −25°C 25°C 0.01 25°C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 52. VCE(sat) versus IC Figure 53. DC Current Gain TBD IC, COLLECTOR CURRENT (mA) Cob, CAPACITANCE (pF) TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 14 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G 1 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) IC/IB = 10 hFE, DC CURRENT GAIN 1000 75°C TA = −25°C 0.1 75°C TA = −25°C 25°C 100 25°C 0.01 10 VCE = 10 V 0 20 40 60 80 100 1 1 10 IC, COLLECTOR CURRENT (mA) 100 0.001 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) vs. IC 4 IC, COLLECTOR CURRENT (mA) 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 10 20 30 40 50 f = 1 Mhz TA = 25°C 100 75°C Figure 58. DC Current Gain 10 25°C 1 TA = −25°C 0.1 VO = 5 V 0 1 2 3 4 5 0.01 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 59. Output Capacitance 10 VO = 0.2 V Figure 60. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) 1 25°C TA = −25°C 75°C 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage vs. Output Current http://onsemi.com 15 MMUN2211LT1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 62. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 63. Open Collector Inverter: Inverts the Input Signal Figure 64. Inexpensive, Unregulated Current Source http://onsemi.com 16 MMUN2211LT1G Series ORDERING INFORMATION Device MMUN2211LT1G MMUN2211LT3G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2234LT3G A8L A8A Marking R1(k) 10 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 22 R2(k) 10 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) 10,000 / Tape & Reel Shipping† 3000 / Tape & Reel 10,000 / Tape & Reel A8B A8C A8D A8E A8F A8G A8H A8J A8K 3000 / Tape & Reel MMUN2238LT1G MMUN2241LT1G A8R A8U 2.2 100 ∞ ∞ 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 17 MMUN2211LT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE q MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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