MPSA14RLRAG

MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 Symbol RqJA RqJC Max 200 83.3 Unit °C/mW °C/mW 3 mW mW/°C Value 30 30 10 500 Unit Vdc Vdc Vdc mAdc BASE 2 EMITTER 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case TO−92 (TO−226AA) CASE 29−11 STYLE 1 MPS A1x AYWWG G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 June, 2005 − Rev. 3 Publication Order Number: MPSA13/D MPSA13, MPSA14 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base −Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2. fT = |hfe| S ftest. fT 125 − MHz hFE MPSA13 MPSA14 MPSA13 MPSA14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 − − − − − − 1.5 2.0 Vdc Vdc − V(BR)CES ICBO IEBO 30 − − − 100 100 Vdc nAdc nAdc Symbol Min Max Unit ORDERING INFORMATION Device MPSA13 MPSA13G MPSA13RLRA MPSA13RLRAG MPSA13RLRM MPSA13RLRMG MPSA13RLRP MPSA13RLRPG MPSA13ZL1 MPSA13ZL1G MPSA14 MPSA14G MPSA14RLRA MPSA14RLRAG MPSA14RLRP MPSA14RLRPG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units / Box 5000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 5000 Units / Box 5000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSA13, MPSA14 RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 200 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 2.0 BANDWIDTH = 1.0 Hz i n, NOISE CURRENT (pA) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 mA 10 mA BANDWIDTH = 1.0 Hz RS ≈ 0 en, NOISE VOLTAGE (nV) IC = 1.0 mA Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 mA 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB) 100 70 50 30 20 10 10 mA 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA 100 mA 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure http://onsemi.com 3 MPSA13, MPSA14 SMALL−SIGNAL CHARACTERISTICS 20 TJ = 25°C |h fe |, SMALL−SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C C, CAPACITANCE (pF) 10 7.0 5.0 2.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. High Frequency Current Gain 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k TJ = 125°C 3.0 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA hFE , DC CURRENT GAIN 25°C 2.0 1.5 −55 °C VCE = 5.0 V 1.0 0.5 0.1 0.2 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RθV, TEMPERATURE COEFFICIENTS (mV/ C) ° 1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 −1.0 −2.0 −3.0 *APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat) 25°C TO 125°C −55 °C TO 25°C 25°C TO 125°C −4.0 qVB FOR VBE −5.0 −6.0 5.0 7.0 10 −55 °C TO 25°C 0.8 0.6 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. “On” Voltages Figure 11. Temperature Coefficients http://onsemi.com 4 MPSA13, MPSA14 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 0.05 SINGLE PULSE D = 0.5 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t) 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 TA = 25°C T C = 2 5° C 1.0 ms 100 ms 1.0 s FIGURE A tP PP PP t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 MPSA13, MPSA14 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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