MPSW51AG

MPSW51, MPSW51A One Watt High Current Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO Value −30 −40 −40 −50 −5.0 −1000 1.0 8.0 2.5 20 − 55 to +150 Unit Vdc 2 BASE 1 EMITTER Collector − Base Voltage VCBO Vdc Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Vdc mAdc mW mW/°C W mW/°C °C 12 1 2 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS W51x AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 51A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 Publication Order Number: MPSW51/D MPSW51, MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −40 Vdc, IE = 0) Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) Collector − Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) Base − Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT Cobo 50 − − 30 MHz pF hFE 55 60 50 − − − − − −0.7 −1.2 − MPSW51 MPSW51A MPSW51 MPSW51A MPSW51 MPSW51A V(BR)CEO −30 −40 −40 −50 −5.0 − − − − − − − − −0.1 −0.1 −0.1 Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc mAdc IEBO mAdc VCE(sat) VBE(on) Vdc Vdc ORDERING INFORMATION Device MPSW51G MPSW51AG MPSW51RLRAG MPSW51ARLRPG Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSW51, MPSW51A 200 VCE , COLLECTOR VOLTAGE (VOLTS) -1.0 IC = -10 mA IC = -50 mA IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA -0.8 h FE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25°C -0.6 -0.4 -0.2 TJ = 25°C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) 20 -10 -20 -50 -100 -200 -500 -1000 -50 -100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) VBE(SAT) @ IC/IB = 10 qV B, TEMPERATURE COEFFICIENT (mV/ °C) -0.8 -1.2 -0.6 VBE(ON) @ VCE = -1.0 V -1.6 qVB for VBE -0.4 -2.0 -0.2 VCE(SAT) @ IC/IB = 10 -2.4 0 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient http://onsemi.com 3 MPSW51, MPSW51A f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 120 160 TJ = 25°C 100 70 50 VCE = -10 V TJ = 25°C f = 20 MHz 80 Cibo 40 Cobo 30 -10 0 -20 -50 -100 -200 -500 -1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo -5.0 -1.0 -20 -10 -15 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) -25 -5.0 Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance -1.0 k 1.0 ms I C , COLLECTOR CURRENT (mA) -500 TA = 25°C TC = 25°C 1.0 ms 100 ms -200 -100 -50 DUTY CYCLE ≤ 10% MPSW51 MPSW51A CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -30 -40 -20 -10 -1.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 4 MPSW51, MPSW51A PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O A B P F L K STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --3.43 --- R XX H V 1 D G J C N N SECTION X−X STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR A R B P T SEATING PLANE BENT LEAD TAPE & REEL AMMO PACK K NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.094 0.102 0.018 0.024 0.500 --0.080 0.105 --0.100 0.135 --0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --2.54 3.43 --3.43 --- G XX V 1 D J C N SECTION X−X ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 MPSW51/D