MPSW51ARLRA

MPSW51, MPSW51A One Watt High Current Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Symbol MPSW51 MPSW51A MPSW51 MPSW51A Emitter −Base Voltage VCEO VCBO Value Unit Vdc −30 −40 1 EMITTER Vdc −40 −50 VEBO −5.0 Vdc Collector Current − Continuous IC −1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 12 1 3 STRAIGHT LEAD 2 3 BENT LEAD TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient Characteristic RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM MPS W51x AYWW G G x = 51A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 5 1 Publication Order Number: MPSW51/D MPSW51, MPSW51A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −30 −40 − − −40 −50 − − −5.0 − − − −0.1 −0.1 − −0.1 55 60 50 − − − − −0.7 − −1.2 50 − − 30 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) MPSW51 MPSW51A Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) MPSW51 MPSW51A Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −40 Vdc, IE = 0) MPSW51 MPSW51A Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) (IC = −1000 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −1000 mAdc, IB = −100 mAdc) VCE(sat) Base −Emitter On Voltage (IC = −1000 mAdc, VCE = −1.0 Vdc) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −10 Vdc, f = 20 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo MHz pF 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† MPSW51G TO−92 (Pb−Free) 5000 Units / Bulk MPSW51AG TO−92 (Pb−Free) 5000 Units / Bulk MPSW51RLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSW51ARLRAG TO−92 (Pb−Free) 2000 / Tape & Reel MPSW51ARLRPG TO−92 (Pb−Free) 2000 / Ammo Pack Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MPSW51, MPSW51A TYPICAL CHARACTERISTICS -1.0 VCE , COLLECTOR VOLTAGE (VOLTS) h FE , CURRENT GAIN 200 100 70 VCE = -1.0 V TJ = 25°C 50 20 -10 -20 -50 -100 -200 -500 -1000 VBE(ON) @ VCE = -1.0 V VCE(SAT) @ IC/IB = 10 -5.0 -10 -20 -50 -100 -200 qV B, TEMPERATURE COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 TJ = 25°C 0 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 Figure 2. Collector Saturation Region VBE(SAT) @ IC/IB = 10 0 -1.0 -2.0 IC = IC = IC = IC = -100 -250 -500 mA -1000 mA mA mA Figure 1. DC Current Gain -0.4 -0.2 IC = -50 mA IB, BASE CURRENT (mA) TJ = 25°C -0.6 IC = -10 mA IC, COLLECTOR CURRENT (mA) -1.0 -0.8 -0.8 -500 -1000 -0.8 -1.2 -1.6 qVB for VBE -2.0 -2.4 -2.8 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient http://onsemi.com 3 -500 -1000 MPSW51, MPSW51A 300 160 TJ = 25°C C, CAPACITANCE (pF) 200 VCE = -10 V TJ = 25°C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 -10 0 -20 -50 -100 -200 -500 Cobo Cibo -1000 IC, COLLECTOR CURRENT (mA) -5.0 -1.0 Figure 5. Current Gain — Bandwidth Product -20 -10 -15 -2.0 -3.0 -4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance -1.0 k 1.0 ms I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS -500 100 ms TA = 25°C TC = 25°C -200 -100 1.0 ms DUTY CYCLE ≤ 10% MPSW51 MPSW51A -50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -20 -10 -1.0 -2.0 -5.0 -10 -20 -30 -40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area http://onsemi.com 4 -25 -5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D SCALE 1:1 12 3 STRAIGHT LEAD 1 DATE 05 MAR 2021 2 3 BENT LEAD STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLES AND MARKING ON PAGE 3 DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE D DATE 05 MAR 2021 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. 2. 3. STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER VCC GROUND 2 OUTPUT STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXX A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON52857E TO−92 (TO−226) 1 WATT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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