MTP2P50E

MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. www.onsemi.com 2 AMPERES, 500 VOLTS RDS(on) = 6 W P−Channel D Features • Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete G Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • This is a Pb−Free Device* S MARKING DIAGRAM AND PIN ASSIGNMENT MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 500 Vdc Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Vdc Vpk ID ID 2.0 1.6 6.0 Adc 75 0.6 W W/°C TJ, Tstg −55 to 150 °C EAS 80 mJ RqJC RqJA 1.67 62.5 TL 260 Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 4.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 sec IDM PD Apk 4 Drain 4 TO−220AB CASE 221A STYLE 5 1 2 MTP 2P50EG AYWW 3 1 Gate 2 Drain °C/W MTP2P50E = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package °C ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device MTP2P50EG 3 Source Package Shipping TO−220AB (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 Publication Order Number: MTP2P50E/D MTP2P50EG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 500 − − 564 − − Vdc mV/°C − − − − 10 100 − − 100 nAdc 2.0 − 3.0 4.0 4.0 − Vdc mV/°C − 4.5 6.0 W − − 9.5 − 14.4 12.6 gFS 0.5 − − mhos Ciss − 845 1183 pF Coss − 100 140 Crss − 26 52 td(on) − 12 24 tr − 14 28 td(off) − 21 42 tf − 19 38 QT − 19 27 Q1 − 3.7 − Q2 − 7.9 − Q3 − 9.9 − − − 2.3 1.85 3.5 − trr − 223 − ta − 161 − tb − 62 − QRR − 1.92 − − − 3.5 4.5 − − − 7.5 − OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS mAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) Drain−Source On−Voltage (VGS = 10 Vdc) (ID = 2.0 Adc) (ID = 1.0 Adc, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 250 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 9.1 W) Fall Time Gate Charge (See Figure 8) (VDS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 1) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (See Figure 14) (IS = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge VSD Vdc ns mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) LD Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS nH nH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 MTP2P50EG TYPICAL ELECTRICAL CHARACTERISTICS 4 4 3.5 VDS ≥ 10 V 7V 3.5 8V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VGS = 10 V TJ = 25°C 3 6V 2.5 2 1.5 5V 1 3 100°C TJ = - 55°C 2.5 25°C 2 1.5 1 0.5 0.5 4V 0 4 8 12 20 16 24 0 28 5 4.5 5.5 6 TJ = 100°C 6 25°C 4 - 55°C 2 0.5 1 2 2.5 1.5 3 ID, DRAIN CURRENT (AMPS) 3.5 4 7 6.5 6 TJ = 25°C 5.75 5.5 5.25 5 VGS = 10 V 4.75 15 V 4.5 4.25 4 0 Figure 3. On−Resistance versus Drain Current and Temperature 0.5 1 1.5 2.5 2 3 ID, DRAIN CURRENT (AMPS) 3.5 4 Figure 4. On−Resistance versus Drain Current and Gate Voltage 2 1000 VGS = 0 V VGS = 10 V ID = 1 A TJ = 125°C I DSS , LEAKAGE (nA) RDS(on), DRAIN‐TO‐SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics 8 1.5 1 0.5 - 50 3.5 Figure 1. On−Region Characteristics VGS = 10 V 0 3 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 0 2 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) R DS(on) , DRAIN‐TO‐SOURCE RESISTANCE (OHMS) R DS(on) , DRAIN‐TO‐SOURCE RESISTANCE (OHMS) 0 - 25 0 25 50 75 100 125 100 100°C 10 25°C 1 150 0 50 100 150 200 250 300 350 400 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage www.onsemi.com 3 450 500 MTP2P50EG POWER MOSFET SWITCHING The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating td(on) and is read at a voltage corresponding to the on−state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG − VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn−on and turn−off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG − VGSP)] td(off) = RG Ciss In (VGG/VGSP) 1800 1600 VGS = 0 V 1000 TJ = 25°C C, CAPACITANCE (pF) Ciss 1400 C, CAPACITANCE (pF) VDS = 0 V 1200 1000 Ciss 800 600 Crss 400 200 0 5 0 VGS Ciss 100 Coss 10 Crss Coss Crss 10 VGS = 0 V TJ = 25°C 5 10 15 20 1 10 25 VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capacitance Variation Figure 7a. Capacitance Variation www.onsemi.com 4 1000 300 QT 10 250 VGS 8 200 Q1 Q2 6 150 ID = 2 A TJ = 25°C 4 100 2 50 Q3 0 0 2 4 VDS 6 8 10 12 14 16 0 20 18 1000 VDD = 250 V ID = 2 A VGS = 10 V TJ = 25°C t, TIME (ns) 12 VDS , DRAIN‐TO‐SOURCE VOLTAGE (VOLTS) VGS, GATE‐TO‐SOURCE VOLTAGE (VOLTS) MTP2P50EG 100 td(off) tf tr td(on) 10 1 10 QT, TOTAL CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 DRAIN−TO−SOURCE DIODE CHARACTERISTICS I S , SOURCE CURRENT (AMPS) 2 VGS = 0 V TJ = 25°C 1.6 1.2 0.8 0.4 0 0.6 0.8 1 1.2 1.6 1.4 1.8 2 2.2 2.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current SAFE OPERATING AREA reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non−linearly with an increase of peak current in avalanche and peak junction temperature. Although many E−FETs can withstand the stress of drain−to−source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated. The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Transient Thermal Resistance−General Data and Its Use.” Switching between the off−state and the on−state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) − TC)/(RqJC). A Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For www.onsemi.com 5 MTP2P50EG SAFE OPERATING AREA 80 VGS = 20 V SINGLE PULSE TC = 25°C EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) I D , DRAIN CURRENT (AMPS) 10 10 ms 1 100 ms 1 ms dc 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 10 1 60 40 20 0 1000 100 ID = 2 A 25 50 75 100 150 125 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 P(pk) 0.05 0.1 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.02 0.01 t1 SINGLE PULSE 0.01 1.0E-05 1.0E-04 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 1.0E+00 Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform www.onsemi.com 6 1.0E+01 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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