MUR480ERL

MUR480EG, MUR4100EG SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 20 mJ Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching • • • • • • • http://onsemi.com ULTRAFAST RECTIFIER 4.0 AMPERES, 800−1000 VOLTS Inductive Load Circuits Ultrafast 75 Nanosecond Recovery Time 175°C Operating Junction Temperature Low Forward Voltage Low Leakage Current High Temperature Glass Passivated Junction Reverse Voltage to 1000 V These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in Plastic Bags, 5,000 per Bag Available Tape and Reel, 1,500 per Reel, by Adding a “RL’’ Suffix to the Part Number Polarity: Cathode indicated by Polarity Band MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol MUR480E MUR4100E VRRM VRWM VR Value Unit MARKING DIAGRAM A MUR 4xxx YYWW G G V 800 1000 Average Rectified Forward Current (Square Wave; Mounting Method #3 Per Note 2) IF(AV) 4.0 @ TA = 35°C A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 70 A TJ, Tstg −65 to +175 °C Operating Junction and Storage Temperature Range AXIAL LEAD CASE 267 STYLE 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location MUR4xxx = Device Number (see page 2) YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 9 1 Publication Order Number: MUR480E/D MUR480EG, MUR4100EG THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance, Junction−to−Ambient Symbol Value Unit RqJA See Note 2 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 A, TJ = 150°C) (iF = 3.0 A, TJ = 25°C) (iF = 4.0 A, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 150°C) (Rated dc Voltage, TJ = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amp/ms) (IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp) trr Maximum Forward Recovery Time (IF = 1.0 Amp, di/dt = 100 Amp/ms, Recovery to 1.0 V) tfr 75 ns WAVAL 20 mJ IRM 2 A Controlled Avalanche Energy (See Test Circuit in Figure 6) Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) 1.53 1.75 1.85 900 25 100 75 V mA ns 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† MUR480E Axial Lead* 500 Units / Bulk MUR480EG Axial Lead* 500 Units / Bulk Axial Lead* 1500 / Tape & Reel Axial Lead* 1500 / Tape & Reel Axial Lead* 500 Units / Bulk Axial Lead* 500 Units / Bulk Axial Lead* 500 Units / Bulk Device MUR480ERL Marking MUR480E MUR480ERLG MUR480ES MUR480ESG MUR480ES MUR4100E MUR4100EG MUR4100ERL MUR4100E MUR4100ERLG Axial Lead* 500 Units / Bulk Axial Lead* 1500 / Tape & Reel Axial Lead* 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 2 MUR480EG, MUR4100EG MUR480EG, MUR4100EG IR, REVERSE CURRENT (m A) 20 25°C TJ = 175°C 10 100°C 7.0 3.0 2.0 100°C 25°C *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0 100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (VOLTS) 0.7 Figure 2. Typical Reverse Current* 900 1000 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Rated VR RqJA = 28°C/W 8.0 6.0 dc 4.0 SQUARE WAVE 2.0 0 50 100 150 200 vF, INSTANTANEOUS VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 1. Typical Forward Voltage Figure 3. Current Derating (Mounting Method #3 Per Note 2) 10 250 70 60 50 TJ = 175°C 9.0 10 0 2 8.0 5.0 7.0 6.0 C, CAPACITANCE (pF) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) TJ = 175°C 1.0 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 5.0 1000 400 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 0.001 10 5.0 (Capacitive IPK =20 IAV Load) 4.0 dc 3.0 SQUAREWAVE 2.0 0 1.0 2.0 3.0 4.0 TJ = 25°C 30 20 10 9.0 8.0 7.0 1.0 0 40 5.0 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance http://onsemi.com 3 50 MUR480EG, MUR4100EG +VDD IL 40 mH COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 Figure 6. Test Circuit ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD t2 t Figure 7. Current−Voltage Waveforms component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The oscilloscope picture in Figure 8, shows the information obtained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximately 20 mjoules. Although it is not recommended to design for this condition, the new “E’’ series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. The unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): t1 Ǔ 500V 50mV CH1 CH2 A 20ms 953 V VERT CHANNEL 2: IL 0.5 AMPS/DIV. CHANNEL 1: VDUT 500 VOLTS/DIV. EQUATION (2): 2 W [ 1 LI LPK AVAL 2 1 CH1 ACQUISITIONS SAVEREF SOURCE CH2 217:33 HRS STACK REF REF Figure 8. Current−Voltage Waveforms http://onsemi.com 4 TIME BASE: 20 ms/DIV. MUR480EG, MUR4100EG NOTE 2 − AMBIENT MOUNTING DATA Data shown for thermal resistance junction−to−ambient (RqJA) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RqJA IN STILL AIR Mounting Method 1 2 RqJA Lead Length, L (IN) 1/8 1/4 1/2 3/4 55 50 51 53 63 58 59 61 Units °C/W °C/W 28 °C/W 3 MOUNTING METHOD 1 P.C. Board Where Available Copper Surface area is small. L L ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ MOUNTING METHOD 2 Vector Push−In Terminals T−28 ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ L L MOUNTING METHOD 3 P.C. Board with 1−1/2 ″ x 1−1/2 ″ Copper Surface ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ L = 1/2 ″ Board Ground Plane http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 ISSUE G DATE 06/06/2000 SCALE 1:1 K D NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 267-04 OBSOLETE, NEW STANDARD 267-05. A 1 2 B K STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: DIM A B D K 98ASB42170B AXIAL LEAD INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 --- MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 --- STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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