NCN2411MTTWG

NCN2411 4-Channel Differential 1:2 Mux/Demux Switch for PCI Express Gen2 The NCN2411 is a 4−Channel differential SPDT switch designed to route PCI Express Gen2 signals. When used in a PCI Express application, the switch can handle up to two PCIe lanes. Due to the ultra−low ON−state capacitance (2 pF typ) and resistance (7.5 W typ), this switch is ideal for switching high frequency signals up to a signal bit rate (BR) of 5 Gbps. This switch pinout is designed to be used in BTX form factor desktop PCs and is available in a space−saving 3.5x9x0.75 mm WQFN42 package. http://onsemi.com MARKING DIAGRAM 1 Features • • • • • • • • • • • • NCN2411 AWLYYWWG WQFN42 CASE 510AP VDD Power Supply from 1.5 V to 2.0 V 4 Differential Channels 2:1 MUX/DEMUX Compatible with PCIe 2.0 Data Rate: Supports 5 Gbps Low Crosstalk: −30 dB @ 3 GHz Low Bit−to−Bit Skew: 5 ps Low RON Resistance: 13 W max Low CON Capacitance: 2 pF Low Supply Current: 200 mA Insertion Loss: −2 dB @ 3 GHz Space Saving, Small WQFN−42 Package This is a Pb−Free Device A WL YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NCN2411MTTWG Package Shipping† WQFN42 2000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Applications • Notebook Computer • Desktop computer • Server/Storage Area Network PCIe Slot B0 +/− B1 +/− A0 +/− PCI Express Controller A2 +/− B2 +/− NCN2411 A3 +/− B3 +/− C0 +/− PCIe Slot A1 +/− C1 +/− C2 +/− C3 +/− Figure 1. Application Schematic © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 0 1 Publication Order Number: NCN2411/D NCN2411 A0+ B0+ A0− B0− A1+ B1+ A1− B1− C0+ C0− C1+ C1− A2+ B2+ A2− B2− A3+ B3+ A3− B3− C2+ C2− C3+ C3− SEL Figure 2. NCN2411 Functional Block Diagram (Top View) TRUTH TABLE Function SEL AN to BN L AN to CN H http://onsemi.com 2 VDD GND VDD GND 42 41 40 39 NCN2411 GND 1 38 B0+ A0+ 2 37 B0− A0− 3 36 B1+ GND 4 35 B1− VDD 5 34 C0+ A1+ 6 33 C0− A1− 7 32 C1+ VDD 8 31 C1− SEL 9 30 VDD GND 10 29 B2+ A2+ 11 28 B2− A2− 12 27 B3+ VDD 13 26 B3− GND 14 25 C2+ A3+ 15 24 C2− A3− 16 23 C3+ GND 17 22 C3− Exposed Pad on Underside 20 21 VDD GND 19 GND VDD 18 (Connect to Gnd) Figure 3. Pin Description (Top View) http://onsemi.com 3 NCN2411 PIN FUNCTION AND DESCRIPTION Pin Pin Name 2, 3 A0+, A0− Signal I/0, Channel 0, Port A Description 6, 7 A1+, A1− Signal I/0, Channel 1, Port A 11, 12 A2+, A2− Signal I/0, Channel 2, Port A 15, 16 A3+, A3− Signal I/0, Channel 3, Port A 38, 37 B0+, B0− Signal I/0, Channel 0, Port B 36, 35 B1+, B1− Signal I/0, Channel 1, Port B 29, 28 B2+, B2− Signal I/0, Channel 2, Port B 27, 26 B3+, B3− Signal I/0, Channel 3, Port B 34, 33 C0+, C0− Signal I/0, Channel 0, Port C 32, 31 C1+, C1− Signal I/0, Channel 1, Port C 25, 24 C2+, C2− Signal I/0, Channel 2, Port C 23, 22 C3+, C3− Signal I/0, Channel 3, Port C 9 SEL Operational Mode Select (When SEL = 0: A → B, When SEL = 1: A → C) Do not float this pin. 5, 8, 13, 18, 20, 30, 40, 42 VDD DC Supply: 1.5 V to 2.0 V 1, 4, 10, 14, 17, 19, 21, 39, 41 GND Power Ground Exposed Pad − The exposed pad on the backside of package is internally connected to GND. Externally the pad should also be user−connected to GND. MAXIMUM RATINGS Parameter Power Supply Voltage Input/Output Voltage Range of the Switch (AN, BN, CN) Symbol Rating Units VDD −0.5 to 2.5 VDC VIS −0.5 to VDD VDC VSEL −0.5 to VDD VDC Continuous Current Through One Switch Icc ±120 mA Maximum Junction Temperature (Note 1) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −65 to +150 °C Thermal Resistance, Junction−to−Air RqJA 75 °C/W ILU ±100 mA Human Body Model (HBM) ESD Rating (Note 3) ESD HBM 7000 V Machine Model (MM) ESD Rating (Note 3) ESD MM 400 V MSL Level 1 − Selection Pin Voltages Latch−up Current (Note 2) Moisture Sensitivity (Note 4) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. 2. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78. 3. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) ±7.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) ±400 V per JEDEC standard: JESD22−A115 for all pins. 4. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A. http://onsemi.com 4 NCN2411 DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (TA = −40°C to +85°C, VDD = 1.5 V to 2.0 V, GND = 0V) Symbol Pins Parameters Conditions (Note 5) Min. Typ (Note 6) Max. Units 1.5 1.8 2.0 V 200 300 mA 1.2 V POWER SUPPLY VDD VDD, GND Supply Voltage Range With respect to GND IDD VDD, GND Quiescent Supply Current VDD = 2 V, VSEL = GND or VDD DATA SWITCH PERFORMANCE VIS AN, BN, CN Data Input/Output Voltage Range 0 RON BN On Resistance (BN) VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA 7.5 13 W RON CN On Resistance (CN) VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA 8.0 13 W RON(flat) BN On Resistance Flatness VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA (Note 7) 0.1 1.24 W RON(flat) CN On Resistance Flatness VDD = 1.5 V, VIS = 0 V to 1.2 V, IIS = 15 mA (Note 7) 0.1 1.24 W DRON BN On Resistance Matching(BN) VDD = 1.5 V, VIS = 0 V, IIS = 15 mA (Note 7) 0.35 W DRON CN On Resistance Matching(CN) VDD = 1.5 V, VIS = 0 V, IIS = 15 mA (Note 7) 0.35 W CON AN to BN, AN to CN On Capacitance f = 1 MHz, Switch On, Open Output 2.0 pF COFF AN to BN, AN to CN Off Capacitance f = 1 MHz, Switch Off 1.5 pF ION AN to BN, AN to CN On Leakage Current VDD = 2 V, VAN = 0 V, 1.2 V, Switch On to BN/CN, BN/CN pins are unconnected −1 +1 mA IOFF AN to BN, AN to CN Off Leakage Current VDD = 2 V, VAN = 0 V, 1.2 V, Switch Off to BN/CN, VBN/VCN = 1.2 V, 0 V −1 +1 mA LOGIC INPUT CHARACTERISTICS (SEL Pin) VIH SEL Input HIGH Voltage (Note 7) 0.65 x VDD VDD V VIL SEL Input LOW Voltage (Note 7) 0 0.35 x VDD V VIK SEL Clamp Diode Voltage VDD = Max, ISEL = −18mA −1.2 V IIH SEL Input HIGH Current VDD = Max, VSEL = VDD ±5 mA IIL SEL Input LOW Current VDD = Max, VSEL = GND ±5 mA −0.7 SWITCHING CHARACTERISTICS tSELON SEL, AN, BN/CN Line Enable Time SEL to AN, BN, CN RL = 50 W, CL = 20 pF 8.0 ns tSELOFF SEL, AN, BN/CN Line Disable Time SEL to AN, BN, CN RL = 50 W, CL = 20 pF 5.0 ns tb−b AN, BN/CN Bit−to−bit skew Within the same differential pair 9.0 ps tch−ch AN, BN Channel−to channel skew Maximum skew between all channels 50 ps 5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 6. Typical values are at VDD = 1.8 V, TA = 25°C ambient and maximum loading. 7. Guaranteed by design and/or characterization. http://onsemi.com 5 NCN2411 DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE (TA = −40°C to +85°C, VDD = 1.5 V to 2.0 V, GND = 0V) Symbol Pins Parameters Conditions (Note 5) Min. Typ (Note 6) Max. Units DYNAMIC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE BR AN to BN, AN to CN Signal Bit Rate DIL AN to BN, AN to CN Differential Insertion Loss DCTK AN, BN, CN Differential Crosstalk DISO AN to BN, AN to CN Differential Off Isolation AN to BN, AN to CN Differential Return Loss DRL 5.0 Gbps f = 3 GHz −2.0 dB f = 100 MHz −0.7 dB f = 3 GHz −30 dB f = 100 MHz −58 dB f = 3 GHz −23 dB f = 100 MHz −58 dB f = 3 GHz −6.0 dB f = 100 MHz −22 dB 5. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 6. Typical values are at VDD = 1.8 V, TA = 25°C ambient and maximum loading. 7. Guaranteed by design and/or characterization. http://onsemi.com 6 NCN2411 TYPICAL OPERATING CHARACTERISTICS 0 −10 MAGNITUDE (dB) −20 −30 −40 −50 −60 −70 −80 −90 100000000 1E+09 1E+10 FREQUENCY (Hz) Figure 4. PCI Express Eye Diagram at 5 Gbps, 800 mVpp Differential Swing (Minimum Case) Figure 5. Differential Off Isolation 0 0 −10 −4 −20 MAGNITUDE (dB) MAGNITUDE (dB) −30 −40 −50 −60 −70 −80 −8 −12 −16 −20 −24 −90 −28 −100 100000000 1E+09 1E+10 100000000 FREQUENCY (Hz) Figure 6. Differential Crosstalk Figure 7. Differential Return Loss RON, ON RESISTANCE (W) 9 8.5 8 7.5 7 6.5 6 0 0.2 0.4 0.6 0.8 1 1E+09 FREQUENCY (Hz) 1.2 1.4 1.6 VIS (V) Figure 8. RON vs. VIS http://onsemi.com 7 1E+10 NCN2411 PARAMETER MEASUREMENT INFORMATION Figure 9. Differential Insertion Loss (SDD21) and Differential Return Loss (SDD11) Figure 10. Differential Off Isolation (SDD21) tskew = |tPLH1-tPLH2| or |tPHL1-tPHL2| Figure 11. Differential Crosstalk (SDD21) Figure 12. Bit−to−Bit and Channel−to−Channel Skew Figure 13. tON and tOFF Figure 14. Off State Leakage Figure 15. On State Leakage http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN42 3.5x9, 0.5P CASE 510AP−01 ISSUE O DATE 15 FEB 2010 1 SCALE 2:1 PIN ONE REFERENCE ÇÇ ÇÇ ÇÇ ÇÇ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D L L L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS DIM A A1 A3 b D D2 E E2 e K L L1 ÉÉ ÉÉ EXPOSED Cu 0.15 C 0.15 C MOLD CMPD DETAIL B TOP VIEW ALTERNATE CONSTRUCTION A 0.10 C A3 GENERIC MARKING DIAGRAM* 0.08 C DETAIL B NOTE 4 A1 SIDE VIEW C XXXXXXXX XXXXXXXX AWLYYWWG SEATING PLANE 0.10 C A B D2 DETAIL A 17 42X 22 L b 0.10 C A B 0.05 C XXXXX A WL YY WW G K 42X NOTE 3 38 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. E2 1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.20 0.30 3.50 BSC 1.95 2.15 9.00 BSC 7.45 7.65 0.50 BSC 0.20 −−− 0.30 0.50 0.00 0.15 RECOMMENDED MOUNTING FOOTPRINT 0.10 C A B 9.30 42X e 0.63 e/2 BOTTOM VIEW 0.50 PITCH 3.80 2.16 1 42X 0.35 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON48316E WQFN42 3.5X9, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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