NCP382HMN10AATXG

NCP382 Fixed Current-Limiting Power-Distribution Switches The NCP382 is a single input dual outputs high side power−distribution switch designed for applications where heavy capacitive loads and short−circuits are likely to be encountered. The device includes an integrated 80 mW, P−channel MOSFET. The device limits the output current to a desired level by switching into a constant−current mode when the output load exceeds the current−limit threshold or a short is present. The current−limit threshold is internally fixed. The power−switches rise and fall times are controlled to minimize current ringing during switching. The FLAG logic output asserts low during overcurrent or overtemperature conditions. The switch is controlled by a logic enable input active high or low. www.onsemi.com MARKING DIAGRAMS 1 1 DFN8 3x3 CASE 506BW XXXXX XXXXX ALYWG G 8 Features • • • • • • • • • • • • 8 2.5 V – 5.5 V Operating Range 80 mW High−Side MOSFET Current Limit: Fixed 500 mA, 1 A, 1.5 A and 2 A Undervoltage Lock−Out (UVLO) Soft−Start Prevents Inrush Current Thermal Protection Soft Turn−Off Enable Active High or Low (EN or EN) Compliance to IEC61000−4−2 (Level 4) ♦ 8.0 kV (Contact) ♦ 15 kV (Air) UL Listed for SOIC package (NCP382xDxxxx) − File No. E343275 IEC60950 − Edition 2 − for SOIC package (NCP382xDxxxx) − Amendments 1 & 2 Certified (CB Scheme) These are Pb−Free Devices 1 SOIC−8 NB CASE 751 XXXXXX ALYWX G 1 XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Typical Applications • Laptops • USB Ports/Hubs • TVs © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 9 1 Publication Order Number: NCP382/D NCP382 USB DATA USB INPUT 5V OUT1 IN Rfault 1 mF D+ D− USB VBUS Port GND NCP382 120 mF 100 kW FLAG1 USB DATA FLAG1 EN1 EN1 FLAG2 FLAG2 EN2 D+ D− USB VBUS Port GND OUT2 EN2 GND 120 mF Figure 1. Typical Application Circuit GND 1 IN 2 8 FLAG1 7 OUT1 8 FLAG1 GND 1 IN 2 EN1 3 6 OUT2 EN2 4 5 FLAG2 DFN8 7 OUT1 SOIC−8 EN1 3 6 OUT2 EN2 4 5 FLAG2 (Top View) Figure 2. Pin Connections PIN FUNCTION DESCRIPTION Pin Name Type Description EN1 I Enable 1 input, logic low/high (i.e. EN or EN) turns on power switch. EN2 I Enable 2 input, logic low/high (i.e. EN or EN) turns on power switch. GND P Ground connection. IN P Power−switch input voltage; connect a 1 mF or greater ceramic capacitor from IN to GND as close as possible to the IC. FLAG1 O Active−low open−drain output 1, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or greater resistor pull−up, otherwise leave unconnected. FLAG2 O Active−low open−drain output 2, asserted during overcurrent or overtemperature conditions. Connect a 10 kW or greater resistor pull−up, otherwise leave unconnected. OUT1 O Power−switch output1; connect a 1 mF ceramic capacitor from OUT1 to GND, as close as possible to the IC. This minimum value is recommended for USB requirement in terms of load transient response and strong short circuits. OUT2 O Power−switch output2; connect a 1 mF ceramic capacitor from OUT2 to GND, as close as possible to the IC. This minimum value is recommended for USB requirement in terms of load transient response and strong short circuits. www.onsemi.com 2 NCP382 MAXIMUM RATINGS Rating Symbol Value Unit From IN to OUT1, From IN to OUT2 Supply Voltage (Note 1) VIN , VOUT1,VOUT2 −7.0 to +7.0 V VIN, VOUT1, VOUT2, VEN1, VEN2, VFLAG1, VFLAG2 −0.3 to +7.0 V ISINK 1.0 mA ESD IEC 15 Air, 8 contact kV Human Body Model (HBM) ESD Rating are (Note 2) ESD HBM 2000 V Machine Model (MM) ESD Rating are (Note 2) ESD MM 200 V IN, OUT1,OUT2, EN1, EN2, FLAG1, FLAG2 (Note 1) FLAG1, FLAG2 sink current ESD Withstand Voltage (IEC 61000−4−2) (output only, when bypassed with 1.0 mF capacitor minimum) Latch−up protection (Note 3) − Pins IN, OUT1, OUT2, FLAG1, FLAG2 − EN1, EN2 LU mA 100 TJ −40 to + TSD °C Storage Temperature Range TSTG −40 to + 150 °C Moisture Sensitivity (Note 5) MSL Level 1 Maximum Junction Temperature (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. According to JEDEC standard JESD22−A108. 2. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins. 3. Latch up Current Maximum Rating: $100 mA per JEDEC standard: JESD78 class II. 4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. OPERATING CONDITIONS Symbol VIN VENX TA ISINK CIN COUTX RqJA Parameter Min Operational Power Supply Enable Voltage Ambient Temperature Range Max Unit 2.5 5.5 V 0 5.5 −40 Typ 25 FLAG sink current Decoupling input capacitor Decoupling output capacitor Thermal Resistance Junction−to−Air TJ Junction Temperature Range IOUTX Recommended Maximum DC current PD Conditions Power Dissipation Rating (Note 8) USB port per Hub +85 °C 1 mA 1 mF 120 mF DFN−8 package (Notes 6 and 7) 140 °C/W SOIC−8 package (Notes 6 and 7) 210 °C/W +125 °C DFN−8 package 2 A SOIC−8 package 1.5 A −40 TA v 25°C TA = 85°C 25 DFN−8 package 850 mW SOIC−8 package 570 mW DFN−8 package 428 mW SOIC−8 package 285 mW 6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. 7. The RqJA is dependent of the PCB heat dissipation. Announced thermal resistance is the unless PCB dissipation and can be improve with final PCB layout. 8. The maximum power dissipation (PD) is given by the following formula: T *T PD + www.onsemi.com 3 JMAX R qJA A NCP382 ELECTRICAL CHARACTERISTICS Min & Max Limits apply for TA between −40°C to +85°C and TJ up to + 125°C for VIN between 2.5 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25°C and VIN = 5 V. Symbol Parameter Conditions Min Typ Max Unit 110 mW POWER SWITCH RDS(on) RDS(on) TR Static drain−source on−state resistance (SOIC−8 Package) Static drain−source on−state resistance (DFN8 Package) Output rise time TJ = 25°C, VIN = 3.6 V to 5 V VIN = 5 V Output fall time 140 TJ = 25°C, VIN = 3.6 V to 5 V VIN = 5 V –40°C < TJ < 125°C VIN = 5 V CLOAD = 1 mF, RLOAD = 100 W (Note 9) VIN = 2.5 V TF 80 –40°C < TJ < 125°C 80 95 mW 100 0.3 1.0 1.5 0.2 0.65 1.0 VIN = 5 V 0.1 0.5 VIN = 2.5 V 0.1 0.5 ms ENABLE INPUT ENx OR ENx VIH High−level input voltage VIL Low−level input voltage 1.2 IENx Input current VENx = 0 V, VENx = 5 V TON Turn on time CLOAD = 1 mF, RLOAD = 100 W (Note 9) TOFF Turn off time V 0.4 V −0.5 0.5 mA 1.0 3.0 ms 1.0 3.0 ms A CURRENT LIMIT IOCP Current−limit threshold (Maximum DC output current IOUTX delivered to load) VIN = 5 V, Fixed 0.5 A 0.5 0.6 0.7 VIN = 5 V, Fixed 1.0 A 1.0 1.2 1.4 VIN = 5 V, Fixed 1.5 A 1.5 1.75 2.0 VIN = 5 V, Fixed 2 A 2 2.25 2.5 VIN = 5 V ms TDET Response time to short circuit 2.0 TREG Regulation time 2.0 3.0 4.0 ms TOCP Over current protection time 14 20 26 ms UNDERVOLTAGE LOCKOUT VUVLO IN pin low−level input voltage VIN rising 2.0 2.35 2.5 V VHYST IN pin hysteresis TJ = 25°C 25 40 60 mV TRUVLO Re−arming Time VIN rising 5.0 10 15 ms 2.0 3.0 mA mA SUPPLY CURRENT IINOFF Low−level output supply current IINON High−level output supply current IREV Reverse leakage current VIN = 5 V, No load on OUTX, Device OFF VENX = 0 V or VENX = 5 V 0.5 A TJ = 25°C TJ = 85°C 95 100 1 and 1.5 A TJ = 25°C TJ = 85°C 115 125 2A TJ = 25°C TJ = 85°C 130 140 VOUTX = 5 V, VIN = 0 V TJ = 25°C 1.0 2.0 mA 400 mV FLAG PIN FLAGX output low voltage IFLAGX = 1 mA ILEAK VOL Off−state leakage VFLAGX = 5 V TFLG FLAGX deglitch FLAGX de−assertion time due to overcurrent TFOCP FLAGX deglitch FLAGX assertion due to overcurrent 0.02 1 mA 4 6 9 ms 6 8 12 ms THERMAL SHUTDOWN TSD Thermal shutdown threshold 140 °C TSDOCP Thermal regulation threshold 125 °C Thermal regulation rearming threshold 115 °C TRSD 9. Parameters are guaranteed for CLOAD and RLOAD connected to the OUTX pin with respect to the ground. 10. DFN package only. 11. Guaranteed by characterization. www.onsemi.com 4 NCP382 VIN IN 1 mF OUT1 NCP382 C LOAD RLOAD C LOAD RLOAD OUT2 GND Figure 3. Test Configuration VENx 50% TR TF 90% VENx VOUTx 10% TOFF TON VOUTx 90% 10% Figure 4. Voltage Waveform www.onsemi.com 5 10% NCP382 BLOCK DIAGRAM EN1 EN block Control logic and timer Flag Current Limiter /FLAG 1 Gate Driver GND OUT 1 IN Oscilator VREF UVLO TSD Blocking control Channel 1 Blocking control Channel 2 OUT 2 Current Limiter Gate Driver Flag /FLAG 2 EN2 EN block Control logic and timer Figure 5. Block Diagram www.onsemi.com 6 NCP382 FUNCTIONAL DESCRIPTION Overview VOUTX The NCP382 is a dual high side power distribution switches designed to protect the input supply voltage in case of heavy capacitive loads, short circuit or over current. In addition, the high side MOSFETs are turned off during undervoltage or thermal shutdown condition. Thanks to the soft start circuitry, NCP382 is able to limit large current and voltage surges. Thermal Regulation Threshold IOUTX IOCP Overcurrent Protection TOCP NCP382 switches into a constant current regulation mode when the output current is above the IOCP threshold. Depending on the load, the output voltage is decreased accordingly. − In case of hot plug with heavy capacitive load, the output voltage is brought down to the capacitor voltage. The NCP382 will limit the current to the IOCP threshold value until the charge of the capacitor is completed. Then, the device enters in timer regulation mode, described in 2 phases: − Off−phase: Power MOSFET is off during TOCP to allow the die temperature to drop. − On−phase: regulation current mode during TREG. The current is regulated to the IOCP level. The timer regulation mode allows the device to handle high thermal dissipation (in case of short circuit for example) within temperature operating condition. NCP382 stays in on−phase/off−phase loop until the over current condition is removed or enable pin is toggled. Remark: other regulation modes can be available for different applications. Please contact our On Semiconductor representative for availability. Drop due to capacitor charge IOUTX IOCP FLAG Indicator Figure 6. Heavy Capacitive Load The FLAG pin is an open−drain MOSFET asserted low during overcurrent or overtemperature conditions. When an overcurrent fault is detected on the power path, FLAG pin is asserted low at the end of the associate deglitch time (TFOCP). Thanks to this feature, the FLAG pin is not tied low during the charge of a heavy capacitive load or a voltage transient on output. The FLAG pin remains low until the fault is removed. Then, the FLAG pin goes high at the end of TFGL − In case of overload, the current is limited to the IOCP value and the voltage value is reduced according to the load by the following relation: I OCP TREG Figure 8. Short−Circuit VOUTX V OUTX + R LOAD2 Timer Regulation Mode (eq. 1) VOUTX Undervoltage Lock−out IOCP x RLOAD Thanks to a built−in under voltage lockout (UVLO) circuitry, the output remains disconnected from input until VIN voltage is above VUVLO. This circuit has a VHYST hysteresis witch provides noise immunity to transient condition. IOUTX IOCP Figure 7. Overload Thermal Sense Thermal shutdown turns off the power MOSFET if the die temperature exceeds TSD. A built-in hysteresis prevents the part from turning on until the die temperature cools at TRSD. − In case of short circuit or huge load, the current is limited to the IOCP value within TDET time until the short condition is removed. If the output remains shorted or tied to a very low voltage, the junction temperature of the chip exceeds TSDOCP value and the device enters in thermal shutdown (MOSFET is turned−off). www.onsemi.com 7 NCP382 Enable Input leakage current IREV from OUTX to IN. In this mode, anode of the body diode is connected to IN pin and cathode is connected to OUTX pin. In operating condition, anode of the body diode is connected to OUTX pin and cathode is connected to IN pin preventing the discharge of the power supply. Enable pin must be driven by a logic signal (CMOS or TTL compatible) or connected to the GND or VIN. A logic low on ENX or high on ENX turns−on the device. A logic high on ENX or low on ENX turns off device and reduces the current consumption down to IINOFF. Blocking Control The blocking control circuitry switches the bulk of the power MOS. When the part is off, the body diode limits the APPLICATION INFORMATION Power Dissipation Power dissipation in regulation mode can be calculated by taking into account the drop VIN −VOUTX link to the load by the following relation: The junction temperature of the device depends on different contributing factors such as board layout, ambient temperature, device environment, etc... Yet, the main contributor in term of junction temperature is the power dissipation of the power MOSFET. Assuming this, the power dissipation and the junction temperature in normal mode can be calculated with the following equations: P D + R DS(on) PD RDS(on) IOUTx ǒǒI 2 ) ǒI OUT2Ǔ Ǔ R qJA ) T A ǒǒVIN * RLOAD1 I OCPǓ ) ǒV IN * R LOAD2 I OCP PD VIN RLOADX IOCP 2 (eq. 2) = Power dissipation (W) = Power MOSFET on resistance (W) = Output current in channel X (A) TJ + PD TJ RqJA TA Ǔ OUT1 PD + Ǔ I OCPǓ (eq. 4) = Power dissipation (W) = Input Voltage (V) = Load Resistance on channel X (W) = Output regulated current (A) PCB Recommendations The NCP382 integrates two PMOS FET rated up to 2 A, and the PCB design rules must be respected to properly evacuate the heat out of the silicon. The DFN8 PAD1 must be connected to ground plane to increase the heat transfer if necessary. Of course, in any case, this pad must not connect to any other potential. By increasing PCB area, the RqJA of the package can be decreased, allowing higher current. (eq. 3) = Junction temperature (°C) = Package thermal resistance (°C/W) = Ambient temperature (°C) www.onsemi.com 8 NCP382 Figure 9. USB Host Typical Application www.onsemi.com 9 NCP382 ORDERING INFORMATION Device Marking NCP382LMN05AATXG 382 L05 NCP382LMN10AATXG 382 L10 NCP382LMN15AATXG 382 L15 NCP382LMN20AATXG Active Enable Level Over Current Limit Evaluation Board UL 236 7 IEC60950 Ed2 (CB Scheme) IEC60950 Ed2 Ad1, Ad2 0.5 A NCP382LM N05AGEVB N N N 1.0 A NCP382LM N10AGEVB N N N 1.5 A NCP382LM N15AGEVB N N N 382 L20 2.0 A NCP382LM N20AGEVB N N N NCP382HMN05AATXG 382 H05 0.5 A NCP382HM N05AGEVB N N N NCP382HMN10AATXG 382 H10 1.0 A NCP382HM N10AGEVB N N N NCP382HMN15AATXG 382 H15 1.5 A NCP382HM N15AGEVB N N N NCP382HMN20AATXG 382 H20 2.0 A NCP382HM N20AGEVB N N N NCP382LD05AAR2G 382L05 0.5 A NCP382LD 05AAGEVB Y Y Y NCP382LD10AAR2G 382L10 1.0 A NCP382LD 10AAGEVB Y Y Y NCP382LD15AAR2G 382L15 1.5 A NCP382LD 15AAGEVB Y Y Y NCP382HD05AAR2G 382H05 0.5 A NCP382HD 05AAGEVB Y Y Y NCP382HD10AAR2G 382H10 1.0 A NCP382HD 10AAGEVB Y Y Y NCP382HD15AAR2G 382H15 1.5 A NCP382HD 15AAGEVB Y Y Y ENx Low ENx High ENx Low ENx High Package Shipping† DFN8 (Pb−Free) 3000 / Tape / Reel SOIC−8 (Pb−Free) 2500 / Tape / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 NCP382 PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506BW ISSUE O A B D L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 PIN ONE REFERENCE 2X 0.10 C 0.10 C 2X DETAIL A ÉÉÉ ÉÉÉ ÉÉÉ OPTIONAL CONSTRUCTIONS E ÉÉ ÉÉ EXPOSED Cu TOP VIEW (A3) DETAIL B 0.05 C DIM A A1 A3 b D D2 E E2 e K L L1 MOLD CMPD DETAIL B A OPTIONAL CONSTRUCTIONS MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 2.30 2.50 3.00 BSC 1.55 1.75 0.65 BSC 0.20 −−− 0.35 0.45 0.00 0.15 0.05 C NOTE 4 SIDE VIEW C RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE D2 DETAIL A 1 8X A1 ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ 2.50 4 L E2 8X K 8 5 e/2 e 8X 8X 0.62 3.30 1.75 ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ b 1 0.10 C A B 0.05 C 0.65 PITCH NOTE 3 BOTTOM VIEW 8X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 NCP382 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 12 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCP382/D