NCP5181BAL36WEVB

NCP5181BAL36WEVB NCP5181 36 W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this evaluation board user’s manual is to highlight the NCP5181 driver and not to explain or detail how to build an electronic ballast. The NCP5181 is a high voltage power MOSFET driver providing two outputs for direct drive of two N-channel power MOSFETs arranged in a half-bridge (or any other high-side + low-side topology) configuration. It uses the bootstrap technique to ensure a proper drive of the high-side power switch. The driver works with two independent inputs to accommodate with any topology (including half-bridge, asymmetrical half-bridge, active clamp and full-bridge). The lamp ballast is powered via a half bridge configuration. The two power MOSFETs are driven with the NCP5181 driver. The driver is supplied by the VCC rail, and the high side driver is supplied by the bootstrap diode: when the low side power MOSFET (Q2) is switched ON, the BRIDGE pin is pulled down to the ground, thus the capacitor connected between the BRIDGE pin and VBOOT pin is refuelled via the diode D3 and the resistor R5 connected to VCC. When Q2 is switched OFF, the bootstrap capacitor C6 supplies the high side driver with a voltage equal to VCC level minus D3 forward voltage diode. Given the NCP5181 architecture, it is up to the designer to generate the right input signal polarity. This includes a dead time to avoid a short circuit between the high and low side power MOSFET. The 555 timer generates only one signal for the driver, the second one, in opposite phase is built by inserting an NPN transistor (Q4) for inverting the signal. Afterwards, the dead time is built with R2, D2 and C13 (typically 260 ns, see Figure 2). Evaluation Board Specification • • • • • Input Range: 85 − 145 Vac OR 184 − 265 Vac Ballast Output Power: 36 W (type PL−L 36 W) Pre-heating Current: 295 mA Pre-heating Time: 1 second Nominal Current: 414 mA Figure 1. NCP5181 Evaluation Board WARNING: BEFORE PLUGGING IN THE EVALUATION BOARD, MAKE SURE THE JUMPER IS IN THE CORRECT POSITION: IF J2 IS USED, THEN Vin MUST BE LOWER THAN 145 Vac. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 1 1 Publication Order Number: EVBUM2141/D NCP5181BAL36WEVB DRV_HI (5 V/div) Dead time 260ns DRV_LO (5 V/div) Time (400 ns/div) Figure 2. Dead Time Between the High and Low Side Driver IN_HI (10 V/div) DRV_HI (10 V/div) IN_LO (10 V/div) DRV_LO (10 V/div) Time (4 μs/div) Figure 3. Input Output Timing Diagram Tube Voltage (100 V/div) Tube current (0.5 V/div) Tube Power (50 W/div) TubeAverage power = 32 W Figure 4. Tube Signals http://onsemi.com 2 http://onsemi.com C16 NC R10 33k Figure 5. Evaluation Board Schematic 5 2 4 R15 22k 5V1 D4 CVolt TRIG R U1 TLC555C F1 T500 mA GND C11 10nF GND Q3 BC547B R11 47k GND C10 220pF C9 220pF VCC CON2 1 2 8 VCC GND 3 4 DIS Q C17 100 uF R16 68k 27k R12 6 7 3 GND GND VCC R13 15k VCC GND C12 18pF GND Q4 BC547B C13 18pF R3 82k 2W GND 1N4148 D2 R2 82k C1 47 uF 400 V SerieM Panasonic C1 47 uF 400 V SerieM Panasonic C3 R1 220uF 12k GND D1 15V 1.3W VCC DF06 1 PT1 J2 US−jumper 3 THR GND 1 2 1 J1 2 3 2 1 5 1N4936 D5 U2 NCP5181 GND IN_LO IN_HI VCC D3 4 6 7 8 R5 10R GND D6 1N4936 C14 220pF/400V DRV_LO Bridge DRV_HI VBOOT 1N4936 C5 100nF GND C4 4.7uF GND GND R4 82k 2W GND R14 390k R9 10k R7 10R C6 R6 R8 100nF 10R 10k GND Q2 IRF840LC 1.4mH L1 Q1 IRF840LC 6.8nF 1kV C15 BALLAST B1 GND C8 220nF 400V C7 220nF 400V NCP5181BAL36WEVB NCP5181BAL36WEVB Figure 6. PCB Printout: Top and Bottom View http://onsemi.com 4 NCP5181BAL36WEVB TEST PROCEDURE A A Vac V RLoad 200 W V J2 Jumper Figure 7. Test Setup Connection Table 1. REQUIRED EQUIPMENT AC Power Source can be able to deliver 230 Vrms or 110 Vrms Two Volt-meters Two Ampere-meters 1 Resistive Load: 200 W/50 W One NCP5181 Evaluation Board − • Voltmeter and Ampmeter on the Load • Load on the Output Test Procedure 1. First of all check if you need jumper #2 (J2 on the board close the diode bridge). This jumper must be removed for use with European mains (230 Vac input voltage), and must be in place when using US mains (110 Vac). This jumper is used to build a voltage doubler just after the bridge diode in case one is using US mains input voltage range. 2. Connect the test setup as shown in Figure 7: • AC Source 3. Apply 230 Vac for European mains or 110 Vac for US mains on the input connector. 4. Check ILoad and VLoad with the appropriate value in the table below. 5. If you get the correct output and input voltage, you can then connect a 36 W fluorescent tube on the output (see Figure 8). Table 2. TEST RESULTS Input Mains J2 Vin (Vrms) Iin (Arms) VLoad (Vrms) ILoad (Arms) European Removed 230 V 278 mA 303 V 370 mA US Yes → Max Input Voltage: 132 Vrms 110 V 514 mA 263 V 340 mA Input Connection A Vac 36 W Tube V Output Connection Figure 8. Ballast Connection http://onsemi.com 5 NCP5181BAL36WEVB Table 3. BILL OF MATERIAL FOR THE NCP5181 EVALUATION BOARD Designator Qty. Description Value Tolerance Footprint Manufacturer Manufacturer Part Number Substitution Allowed Lead Free U2 1 NCP5181 NA NA DIP8 ON Semiconductor NCP5181PG No Yes U1 1 CMOS IC Analog/Timer NA DIP8 Texas Instruments TLC555CP Yes No C1, C2 2 Electrolytic Capacitor 47 mF, 400 V 20% Radial Panasonic ECA2GM470 Yes No C3 1 Electrolytic Capacitor 220 mF, 16 V 20% Radial Panasonic ECA1CM221 Yes No C4 1 Electrolytic Capacitor 4.7 mF, 63 V 20% Radial Panasonic EEUEB1J4R7 Yes No C5, C6 2 Capacitor 100 nF, 50 V 10% Radial Murata RPER71H104K2M1A05U Yes No C7, C8 2 Capacitor 220 nF, 400 V 10% Radial Vishay MKT1822422405 Yes No C9, C10 2 Capacitor 220 nF, 100 V 5% Radial Murata RPE5C2A221J2M1Z05A Yes No C11 1 Capacitor 10 nF, 100 V 10% Radial Murata RPER72A103K2M1B05A Yes No C12, C13 2 Capacitor 18 pF, 100 V 2% Radial Vishay 2252 586 20154 Yes Yes C14 1 Capacitor 220 pF, 400 V 10% Radial Panasonic ECKATS221KB Yes No C15 1 Capacitor 6.8 nF, 1600 V 5% Radial Vishay 2222 375 30682 Yes No C16 1 Capacitor NC − Radial − − − − C17 1 Electrolytic Capacitor 100 mF, 16 V 20% Radial Panasonic ECA1CM101 Yes No D1 1 Zener Diode 15 V, 1.3 W 5% Axial Vishay BZX85C15 Yes No D2 1 High-speed Diode 0.2 A, 75 V NA Axial Philips Semiconductor 1N4148 Yes No D3, D5, D6 3 Rectifier Diode 1 A, 400 V NA Axial ON Semiconductor 1N4936G Yes Yes D4 1 Zener Diode 5.1 V, 1.3 W 5% Axial Vishay BZX85C5V1 Yes No F1 1 Fuse 500 mA, 250 V NA Radial Schurter 0034.6612 Yes No L1 1 Inductor 1.4 mH NA NA Vogt 53−044 No No PT1 1 Diode Bridge 600 V, 1 A NA DFM Vishay DF06M Yes No R1 1 Resistor 12 kW, 0.33 W 5% Axial Vishay CFA020712K Yes No R2 1 Resistor 82 kW, 0.33 W 5% Axial Vishay CFA020782K Yes No R3, R4 2 Resistor 82 kW, 3 W 5% Axial Vishay CPF382K000JN Yes No R5, R6, R7 3 Resistor 10 W, 0.33 W 5% Axial Vishay CFA020710R Yes No R8, R9 2 Resistor 10 kW, 0.33 W 5% Axial Yageo CFA020710K Yes No R10 1 Resistor 33 kW, 0.33 W 5% Axial Vishay CFA020733K Yes No R11 1 Resistor 47 kW, 0.33 W 5% Axial Vishay CFA020747K Yes No R12 1 Resistor 27 kW, 0.33 W 5% Axial Vishay CFA020727K Yes No R13 1 Resistor 15 kW, 0.33 W 5% Axial Vishay CFA020715K Yes No R14 1 Resistor 390 kW, 0.33 W 5% Axial Vishay CFA0207390K Yes No R15 1 Resistor 22 kW, 0.33 W 5% Axial Vishay CFA020722K Yes No R16 1 Resistor 68 kW, 0.33 W 5% Axial Vishay CFA020768K Yes No Q1, Q2 2 Power MOSFET N-channel 8 A, 500 V NA TO220 International Rectifier IRF840LC Yes No Q3, Q4 2 NPN Transistor 100 mA, 45 V NA TO−92 ON Semiconductor BC547BG Yes Yes B1, J1 2 Connector 2/″ NA 5.08 mm Weidmuller PM5.08/2/90 (1760510000) Yes No J2 1 Jumper Resistor 0 W, 0.25 W NA Axial Yageo ZOR−25−B−52 Yes No http://onsemi.com 6 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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