DATA SHEET
www.onsemi.com
ASPM 27 Series
3−Phase 650 V, 50 A Automotive Smart
Power Module
NFVA35065L32
General Description
NFVA35065L32 is an advanced Automotive SPM® module
providing a fully−featured, high−performance inverter output stage
for hybrid and electric vehicles. These modules integrate optimized
gate drive of the built−in IGBTs to minimize EMI and losses, while
also providing multiple on−module protection features including
under−voltage lockouts, over−current shutdown, thermal monitoring
of drive IC, and fault reporting. The built−in, high−speed HVIC
requires only a single supply voltage and translates the incoming
logic−level gate inputs to the high−voltage, high−current drive signals
required to properly drive the module’s internal IGBTs. Separate
negative IGBT terminals are available for each phase to support the
widest variety of control algorithms.
3D Package Drawing
(Click to Activate 3D Content)
ASPM27−CCA
CASE MODCB
MARKING DIAGRAM
XX
Features
• Automotive SPM in 27 Pin DIP Package
• AEC & AQG324 Qualified and PPAP Capable
• 650 V/50 A 3−Phase IGBT Inverter with Integral Gate Drivers
and Protections
• 175°C Guaranteed Short−Circuit Rated FS Trench IGBTs with Low
Vce(sat) and Fast Switching
• Outstanding Thermal Resistance Using AlN DBC Substrate
• Separated Open−Emitter Pins from Low−Side IGBTs for
•
•
•
•
•
Three−Phase Current Sensing
Single−Grounded Power Supply
LVIC Temperature−Sensing Built−In for Temperature Monitoring
Isolation Rating: 2500 Vrms/1 min.
Pb−Free and RoHS Compliant
UI1557 Certified (File No. E209204) and UL94V−0 Compliant
ON
XX
XXXXXXXXXXXX
XXX
Y
WW
0000001
= onsemi Logo
= Version and Current Rate
= Specific Device Code
= Lot Number
= Year
= Work Week
= Serial Number
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Applications
• Automotive High Voltage Auxiliary Motors
♦
♦
♦
♦
Climate e−Compressors
Oil/Water Pumps
Super/Turbo Chargers
Variety Fans
Related Resources
• AND9800 − Automotive Smart Power Module, 650 V ASPM27
•
Series
AN−9086 − SPM 3 Package Mounting Guidance
Integrated Power Functions
• 650 V−50 A IGBT Inverter for Three−phase DC/AC Power
Conversion (Refer to Figure 2)
© Semiconductor Components Industries, LLC, 2017
April, 2022 − Rev. 6
1
Publication Order Number:
NFVA35065L32/D
NFVA35065L32
Integrated Drive, Protection and System Control
Functions
• For inverter high−side IGBTs: gate drive circuit,
•
• Fault signaling: corresponding to UVLO (low−side
high−voltage isolated high−speed level shifting control
circuit, Under−Voltage Lock−Out Protection (UVLO)
For inverter low−side IGBTs: gate drive circuit,
Short−Circuit Protection (SCP) control circuit,
Under−Voltage Lock−Out Protection (UVLO)
supply) and SC faults
• Input interface: active−HIGH interface, works with
3.3/5 V logic, Schmitt−trigger input
PIN CONFIGURATION
Figure 1. Top View
www.onsemi.com
2
NFVA35065L32
PIN DESCRIPTIONS
Pin Number
Pin Name
Pin Description
1
VDD(L)
Low−Side Common Bias Voltage for IC and IGBTs Driving
2
COM
Common Supply Ground
3
IN(UL)
Signal Input for Low−Side U−Phase
4
IN(VL)
Signal Input for Low−Side V−Phase
5
IN(WL)
Signal Input for Low−Side W−Phase
6
VFO
Fault Output
7
VTS
Output for LVIC Temperature Sensing Voltage Output
8
CSC
Shut Down Input for Short−Circuit Current Detection Input
9
IN(UH)
Signal Input for High−Side U−Phase
10
VDD(H)
High−Side Common Bias Voltage for IC and IGBTs Driving
11
VB(U)
High−Side Bias Voltage for U−Phase IGBT Driving
12
VS(U)
High−Side Bias Voltage Ground for U−Phase IGBT Driving
13
IN(VH)
Signal Input for High−Side V−Phase
14
VDD(H)
High−Side Common Bias Voltage for IC and IGBTs Driving
15
VB(V)
High−Side Bias Voltage for V−Phase IGBT Driving
16
VS(V)
High−Side Bias Voltage Ground for V−Phase IGBT Driving
17
IN(WH)
Signal Input for High−Side W−Phase
18
VDD(H)
High−Side Common Bias Voltage for IC and IGBTs Driving
19
VB(W)
High−Side Bias Voltage for W−Phase IGBT Driving
20
VS(W)
High−Side Bias Voltage Ground for W−Phase IGBT Driving
21
NU
Negative DC−Link Input for U−Phase
22
NV
Negative DC−Link Input for V−Phase
23
NW
Negative DC−Link Input for W−Phase
24
U
Output for U−Phase
25
V
Output for V−Phase
26
W
Output for W−Phase
27
P
Positive DC−Link Input
www.onsemi.com
3
NFVA35065L32
INTERNAL EQUIVALENT CIRCUIT AND INPUT/OUTPUT PINS
(19) V B(W)
(18) V DD(H)
(17) IN (WH)
(20) V S(W)
(15) V B(V)
(14) V DD(H)
(13) IN (VH)
(16) V S(V)
(11) V B(U)
(10) V DD(H)
(9) IN (UH)
(12) V S(U)
(8) C SC
(7) V TS
(6) V FO
(5) IN (WL)
(4) IN (VL)
(3) IN (UL)
(2) COM
(1) V DD(L)
P (27)
VB
V DD
COM
IN
OUT
VS
W (26)
VB
V DD
COM
IN
OUT
VS
V (25)
VB
V DD
COM
IN
OUT
C SC
OUT
VS
V TS
U (24)
N W (23)
V FO
IN
OUT
IN
N V (22)
IN
COM
OUT
V DD
N U (21)
NOTES:
1. Inverter low−side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive
and protection functions.
2. Inverter power side is composed of four inverter DC−link input terminals and three inverter output terminals.
3. Inverter high−side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT.
Figure 2. Internal Block Diagram
www.onsemi.com
4
NFVA35065L32
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Rating
Unit
INVERTER PART
VPN
VPN(Surge)
VCES
Supply Voltage
Applied between P−NU, NV, NW
500
V
Supply Voltage (Surge)
Applied between P−NU, NV, NW
550
V
650
V
Collector−Emitter Voltage
±IC
Each IGBT Collector Current
TC = 100°C, VDD ≥ 15 V, TJ ≤ 175°C
(Note 4)
50
A
±ICP
Each IGBT Collector Current (Peak)
TC = 25°C, TJ ≤ 175°C, Under 1 ms
Pulse Width (Note 4)
100
A
PC
Collector Dissipation
TC = 25°C per One Chip (Note 4)
428
W
TJ
Operating Junction Temperature
IGBT and Diode
−40∼175
°C
Driver IC
−40∼150
CONTROL PART
VDD
Control Supply Voltage
Applied between VDD(H), VDD(L)−COM
20
V
VBS
High−Side Control Bias Voltage
Applied between VB(U)−VS(U),
VB(V)−VS(V), VB(W)−VS(W)
20
V
VIN
Input Signal Voltage
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL)−COM
−0.3∼VDD+0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO−COM
−0.3∼VDD+0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
2
mA
VSC
Current Sensing Input Voltage
Applied between CSC−COM
−0.3∼VDD+0.3
V
Short Circuit Withstand Time
VDD = VBS ≤ 16.5 V, VPN ≤ 400 V,
TJ = 150°C
Non−repetitive
3
ms
TOTAL SYSTEM
tSC
TSTG
Storage Temperature
VISO
Isolation Voltage
−55∼175
°C
2500
Vrms
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to Heat Sink Plate
THERMAL RESISTANCE
Symbol
Parameter
Rth(j−c)Q
Junction to Case Thermal Resistance
(Note 5)
Package Stray Inductance
Rth(j−c)F
Ls
Conditions
Min.
Typ.
Max.
Unit
Inverter IGBT part (per 1/6 module)
−
−
0.35
°C/W
Inverter FWD part (per 1/6 module)
−
−
0.90
°C/W
P to NU, NV, NW (Note 5)
−
24
−
nH
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 1. DBC discoloration and Picker Circle Printing allowed, please
refer to application note AN−9190 (Impact of DBC Oxidation on SPM® Module Performance).
6. Stray inductance per phase measured per IEC 60747−15.
www.onsemi.com
5
NFVA35065L32
ELECTRICAL CHARACTERISTICS − INVERTER PART (TJ as specified)
Symbol
Parameter
Conditions
VCE(SAT)
Collector − Emitter Saturation Voltage
VDD = VBS = 15 V, VIN = 5 V,
IC = 50 A, TJ = 25°C
Min.
Typ.
Max.
Unit
−
1.75
2.25
V
2.15
2.75
V
1.90
2.50
V
1.85
2.45
V
VDD = VBS = 15 V, VIN = 5 V,
IC = 50 A, TJ = 175°C
VF
FWDi Forward Voltage
VIN = 0 V, IF = 50 A, TJ = 25°C
−
VIN = 0 V, IF = 50 A, TJ = 175°C
HS
High Side Switching Times
tON
tC(ON)
tOFF
tC(OFF)
VPN = 300 V, VDD = 15 V, IC = 50 A,
TJ = 25°C
VIN = 0 V ⇔ 5 V, Inductive Load
See Figure 4
(Note 7)
0.80
1.20
1.80
ms
−
0.30
0.75
ms
−
1.25
1.75
ms
−
0.15
0.60
ms
−
0.15
−
ms
VPN = 300 V, VDD = 15 V, IC = 50 A,
TJ = 25°C
VIN = 0 V ⇔ 5 V, Inductive Load
See Figure 4
(Note 7)
0.65
1.05
1.65
ms
−
0.30
0.75
ms
−
1.30
1.80
ms
−
0.25
0.60
ms
−
0.15
−
ms
−
−
3
mA
trr
LS
Low Side Switching Times
tON
tC(ON)
tOFF
tC(OFF)
trr
ICES
Collector−Emitter Leakage Current
TJ = 25°C, VCE = VCES
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
NFVA35065L32
NFVA35065L32
ASPM27−CCA
10 Units/Tube
7. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the
given gate driving condition internally. For the detailed information see Figure 3.
100% IC
100% IC
trr
IC
VCE
IC
VIN
VIN
tON
10% IC
VIN(ON)
VCE
tOFF
tc(ON)
tc(OFF)
VIN(OFF)
90% IC 10% VCE
(a) turn − on
10% VCE
(b) turn − off
Figure 3. Switching Time Definition
www.onsemi.com
6
10% IC
NFVA35065L32
One−Leg Diagram
IC
DBS
CBS
VB
VDD
COM
RBS
LS Switching
OUT
VS
IN
HS Switching
VIN
4.7 kW
VCC
0V
V
+15 V
V
Inductor
IN
VDD
VFO
VTS
CSC
COM
LS Switching
5V
VPN
U,V,W
300 V
HS Switching
OUT
NU,V,W
V
+5 V
Figure 4. Example Circuit for Switching Test
Inductive Load, V PN = 300V, V DD=15V, TJ=25℃
4000
IGBT Turn−on, Eon
IGBT Turn−off, Eoff
FRD Turn−off, Erec
IGBT Turn−on, Eon
IGBT Turn−off, Eoff
FRD Turn−off, Erec
SWITCHING LOSS ESW [uJ]
3500
3000
2500
2000
1500
1000
3000
2500
2000
1500
1000
500
500
0
0
0
10
20
30
40
0
50
10
20
30
Figure 5. Switching Loss Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
COLLECTOR CURRENT, I C [AMPERES]
COLLECTOR CURRENT, IC [AMPERES]
VTS [V]
SWITCHING LOSS ESW [uJ]
3500
Inductive Load, V PN = 300V, V DD=15V, TJ=150℃
4000
40
60
80
100
120
140
TLVIC [°C]
Figure 6. Temperature Profile of VTS (Typical)
www.onsemi.com
7
160
50
NFVA35065L32
CONTROL PART (TJ = 25°C)
Symbol
Parameter
IQDDH
Quiescent VDD Supply Current
IQDDL
IPDDH
Operating VDD Supply Current
IPDDL
Conditions
Min.
Typ.
Max.
Unit
VDD(H) = 15 V,
IN(UH,VH.WH) = 0 V
VDD(H) − COM
−
−
0.40
mA
VDD(L) = 15 V,
IN(UL,VL,WL) = 0 V
VDD(L) − COM
−
−
4.80
mA
VDD(H) = 15 V, fPWM = 20 kHz,
duty = 50%, applied to one
PWM signal input for
High−Side
VDD(H) − COM
−
−
0.48
mA
VDD(L) = 15 V, fPWM = 20 kHz,
duty = 50%, applied to one
PWM signal input for
Low−Side
VDD(L) − COM
−
−
8.80
mA
IQBS
Quiescent VBS Supply Current
VBS = 15 V,
IN(UH,VH.WH) = 0 V
VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W),
−
−
0.24
mA
IPBS
Operating VBS Supply Current
VDD = VBS = 15 V,
fPWM = 20 kHz, duty = 50%,
applied to one PWM signal
input for High−Side
VB(U) − VS(U),
VB(V) − VS(V),
VB(W) − VS(W),
−
−
4.40
mA
VFOH
Fault Output Voltage
VDD = 15 V, VSC = 0 V, VFO Circuit: 4.7 kW to 5 V
Pull−up
4.5
−
−
V
VDD = 15 V, VSC = 1 V, VFO Circuit: 4.7 kW to 5 V
Pull−up
−
−
0.50
V
0.45
0.50
0.55
V
VFOL
VSC(ref)
Short Circuit Trip Level
VDD = 15 V (Note 8)
UVDDD
Supply Circuit Under−Voltage
Protection
Detection Level
9.80
−
13.3
V
Reset Level
10.3
−
13.8
V
UVBSD
Detection Level
9.00
−
12.5
V
UVBSR
Reset Level
9.50
−
13.0
V
50
−
−
ms
540
640
740
mV
−
−
2.60
V
0.80
−
−
V
UVDDR
CSC − COM(L)
tFOD
Fault−Out Pulse Width
VTS
LVIC Temperature Sensing
Voltage Output
VDD(L) = 15 V, TLVIC = 25°C (Note 9)
See Figure 6
VIN(ON)
ON Threshold Voltage
VIN(OFF)
OFF Threshold Voltage
Applied between IN(UH,VH.WH) − COM
IN(UL,VL.WL) − COM
8. Short−circuit current protection os functioning only at the low−sides.
9. TLVIC is the temperature of LVIC itself. VTS is only for sensing temperature of LVIC and can not shutdown IGBTs automatically.
RECOMMENDED OPERATING CONDITIONS
Value
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
−
300
400
V
VPN
Supply Voltage
Applied between P − NU, NV, NW
VDD
Control Supply Voltage
Applied between VDD(H) − COM, VDD(L) − COM
14.0
15
16.5
V
VBS
High−Side Bias Voltage
Applied between VB(U) − VS(U), VB(V) − VS(V),
VB(W) − VS(W)
13.0
15
18.5
V
dVDD/dt,
dVBS/dt,
Control Supply Variation
−1
−
1
V/ms
2.0
−
−
ms
tdead
Blanking Time for Preventing
Arm−Short
For Each Input Signal
fPWM
PWM Input Signal
−40°C ≤ TC ≤ 125°C, −40°C ≤ TJ ≤ 150°C
−
−
20
kHz
VSEN
Voltage for Current Sensing
Applied between NU, NV, NW − COM
(Including Surge Voltage)
−5
−
5
V
www.onsemi.com
8
NFVA35065L32
RECOMMENDED OPERATING CONDITIONS (continued)
PWIN(ON)
Minimum Input Pulse Width
PWIN(OFF)
PWIN(ON)
PWIN(OFF)
TJ
VDD = VBS = 15 V, IC ≤ 50 A, Wiring Inductance
between NU,V,W and DC Link N < 10 nH
(Note 10)
2.0
−
−
2.0
−
−
VDD = VBS = 15 V, 50 A ≤ IC ≤ 100 A, Wiring Inductance between NU,V,W and DC Link N < 10 nH
(Note 10)
2.5
−
−
2.5
−
−
−40
−
150
°C
Junction Temperature
ms
ms
10. This product might not make response if input pulse width is less than the recommended value.
MECHANICAL CHARACTERISTICS AND RATINGS
Value
Parameter
Min.
Typ.
Max.
Unit
0
−
+150
mm
Recommended 0.7 N•m
0.6
0.7
0.8
N•m
Recommended 7.1 kg•cm
Conditions
Device Flatness
See Figure 7
Mounting Torque
Mounting Screw: M3
See Figure 8
6.2
7.1
8.1
kg•cm
Terminal Pulling Strength
Load 19.8 N
10
−
−
s
Terminal Bending Strength
Load 9.8 N 90 deg. bend
2
−
−
times
−
15
−
g
Weight
(+)
(+)
Figure 7. Flatness Measurement Position
Pre−Screwing: 1 → 2
Final Screwing: 2 → 1
NOTES:
11. Do not make over torque when mounting screws. Much mounting torque may cause DBC cracks, as well as bolts and Al heat−sink
destruction
12. Avoid one−sided tightening stress. Figure 8 shows the recommended torque order for mounting screws. Uneven mounting can cause
the DBC substrate of package to be damaged. The pre−screwing torque is set to 20 ∼ 30% of maximum torque rating.
Figure 8. Mounting Screws Torque Order
www.onsemi.com
9
NFVA35065L32
Input signal
Protection
Circuit State
RESET
UVDDR
Control
Supply Voltage
SET
a1
RESET
a6
UVDDD a3
a2
a7
a4
Output Current
a5
Fault Output Signal
a1: Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2: Normal operation: IGBT ON and carrying current.
a3: Under voltage detection (UVDDD).
a4: IGBT OFF in spite of control input condition.
a5: Fault output operation starts with a fixed pulse width.
a6: Under voltage reset (UVDDR).
a7: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 9. Under−Voltage Protection (Low−Side)
Input signal
Protection
Circuit State
RESET
UVBSR
Control
Supply Voltage
SET
b1
UVBSD b3
RESET
b5
b6
b2
b4
Output Current
Fault Output Signal
High−level (no fault output)
b1: Control supply voltage rises: After the voltage rises UVBSR, the circuits start to operate when next input is applied.
b2: Normal operation: IGBT ON and carrying current.
b3: Under voltage detection (UVBSD).
b4: IGBT OFF in spite of control input condition, but there is no fault output signal.
b5: Under voltage reset (UVBSR).
b6: Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.
Figure 10. Under−Voltage Protection (High−Side)
www.onsemi.com
10
NFVA35065L32
Lower Arms
Control Input
c6
Protection
Circuit State
SET
Internal IGBT
Gate−Emitter Voltage
c3
c2
c7
RESET
c4
Internal delay
at protection circuit
SC current trip level
c8
c1
Output Current
SC reference voltage
Sensing Voltage
of Sense Resistor
Fault Output Signal
c5
RC filter circuit
time constant
delay
(with the external sense resistance and RC filter connection)
c1: Normal operation: IGBT ON and carrying current.
c2: Short circuit current detection (SC trigger).
c3: All low−side IGBT’s gate are hard interrupted.
c4: All low−side IGBTs turn OFF.
c5: Fault output operation starts with a fixed pulse width.
c6: Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7: Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8: Normal operation: IGBT ON and carrying current.
Figure 11. Short−Circuit Current Protection (Low−Side Operation Only)
INPUT/OUTPUT INTERFACE CIRCUIT
+5V (MCU or Control power)
ASPM
(WH)
4.7 kΩ
IN(UH), IN(VH), IN(WH)
IN(UL), IN(VL), IN(WL)
MCU
V FO
COM
NOTE:
13. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance
of the application’s printed circuit board. The input signal section of the ASPM27 product integrates 5kW (typ.) pull−down resistor.
Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal.
Figure 12. Recommended CPU I/O Interface Circuit
www.onsemi.com
11
NFVA35065L32
R1
Gating WH
P (27)
(17) IN(WH)
(18) VDD(WH)
R2
D1
C4
COM
C3 C4
D2
R1
(19) VB(W)
(20) VS(W)
(14) VDD(VH)
D1
C4
D2
M
C
U
R1
(15) VB(V)
(16) VS(V)
Gating UH
(10) VDD(UH)
R2
D1
C4
C3 C4
5V line
D2
IN
VDD
COM
(11) VB(U)
OUT
VS
V (25)
M
C7
OUT
VS
VB
(12) VS(U)
W (26)
VS
VB
(9) IN(UH)
C1 C1 C1
IN
VDD
COM
C3 C4
OUT
VB
(13) IN(VH)
Gating VH
R2
IN
VDD
VDC
U (24)
R3
VTS
R6
B
D
Gating WL
Gating VL
Gating UL
C1
(8) CSC
CSC
(7) VTS
(6) VFO
R1
(5) IN(WL)
R1
(4) IN(VL)
R1
(3) IN(UL)
C1 C1 C1
IN
C2
NV (22)
A
R4
E
IN
COM
OUT
VDD
NU (21)
Power
GND Line
R4
C4
C
Input Signal for
Short−Circuit Protection
R4
OUT
IN
(1) VDD(L)
D2
NW (23)
VFO
(2) COM
15V line
C1
OUT
VTS
C5
R1
Fault
C6
R5
W−Phase Current
R5
V−Phase Current
U−Phase Current
Control
GND Line
R5
C5
C5
C5
NOTES:
14. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2−3 cm)
15. VFO output is open−drain type. The signal line should be pulled up to the positive side of the MCU or control power supply with a resistor
that makes IFO up to 2mA. Refer to Figure 12.
16. Input signal is active−HIGH type. There is a 5 kW resistor inside the IC to pull−down each input signal line to GND. RC coupling circuits
should be adopted for the prevention of input signal oscillation. R1C1 time constant should be selected in the range 50∼150 ns. (Recommended R1 = 100 W, C1 = 1 nF)
17. Each wiring pattern inductance of A point should be minimized (Recommended less than 10 nH). Use the shunt resistor R4 of surface
mounted (SMD) type to reduce wiring inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the
shunt resistor R4 as close as possible.
18. To prevent errors of the protection function, the wiring of B, C and D point should be as short as possible.
19. In the short−circuit protection circuit, please select the R6C6 time constant in the range 1.5∼2 ms.
20. Each capacitor should be mounted as close to the pins of the ASPM27 product as possible.
21. To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short as possible. The
use of a high−frequency non−inductive capacitor between the P & GND pins is recommended.
22. Relays are used at almost every systems of electrical equipment at industrial application. In these cases, there should be sufficient distance between the CPU and the relays.
23. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each
pair of control supply terminals (Recommended zener diode is 22 V/1 W. which has the lower zener impedance characteristic than
about 15 W).
24. C2 of around 7 times larger than bootstrap capacitor C3 is recommended.
25. Choose the electrolytic capacitor with good temperature characteristic in C3. Also choose 0.1∼0.2 mF R−category ceramic capacitors
with good temperature and frequency characteristics in C4.
Figure 13. Typical Application Circuit
SPM is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the
United States and/or other countries.
www.onsemi.com
12
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
27LD MODULE PDD STD
CASE MODCB
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13500G
27LD MODULE PDD STD
DATE 30 NOV 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
工商网监
湘ICP备2023018690号
