NLAS1053USG

NLAS1053 2:1 Mux/Demux Analog Switches The NLAS1053 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. The device consists of a single 2:1 Mux/Demux (SPDT), similar to ON Semiconductor’s NLAS4053 analog and digital voltages that may vary across the full power supply range (from VCC to GND). The inhibit and select input pins have over voltage protection that allows voltages above VCC up to 7.0 V to be present without damage or disruption of operation of the part, regardless of the operating voltage. www.onsemi.com MARKING DIAGRAM 8 1 Features • • • • • • • • • • • US8 US SUFFIX CASE 493 8 High Speed: tPD = 1 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C High Bandwidth, Improved Linearity, and Low RDSON INH Pin Allows a Both Channels ‘OFF’ Condition (With a High) RDSON ≅ 25 , Performance Very Similar to the NLAS4053 Break Before Make Circuitry, Prevents Inadvertent Shorts Useful For Switching Video Frequencies Beyond 50 MHz Latchup Performance Exceeds 300 mA ESD Performance: HBM > 2000 V; MM > 200 V, CDM > 1500 V Tiny US8 Package, Only 2.1 X 3.0 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COM 1 8 AC MG G 1 AC M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) FUNCTION TABLE INH Select Ch 0 Ch 1 H L L X L H OFF ON OFF OFF OFF ON VCC ORDERING INFORMATION INH 2 7 CH0 N/C 3 6 CH1 GND 4 5 Select Device Package Shipping† NLAS1053USG US8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Figure 1. Pin Assignment © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 3 1 Publication Order Number: NLAS1053/D NLAS1053 MAXIMUM RATINGS Parameter Symbol Value Unit Positive DC Supply Voltage VCC −0.5 to +7.0 V Digital Input Voltage (Select and Inhibit) VIN −0.5 ≤ V is ≤ +7.0 V Analog Output Voltage (VCH or VCOM) VIS −0.5 ≤ V is ≤ VCC +0.5 V DC Current, Into or Out of Any Pin IIK 50 mA TSTG −65 to +150 _C Lead Temperature, 1 mm from Case for 10 Seconds TL 260 _C Junction Temperature under Bias TJ +150 _C Thermal Resistance JA 250 _C/W Power Dissipation in Still Air at 85_C PD 250 mW Storage Temperature Range Moisture Sensitivity Flammability Rating MSL Level 1 FR UL 94 V−0 @ 0.125 in VESD > 2000 200 N/A V ILatchup ±300 mA Oxygen Index: 30% − 35% ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Latchup Performance Above VCC and Below GND at 85_C (Note 5) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Min Max Unit VCC 2.0 5.5 V Digital Input Voltage (Select and Inhibit) VIN GND 5.5 V Static or Dynamic Voltage Across an Off Switch VIO GND VCC V Analog Input Voltage (CH, COM) VIS GND VCC V Operating Temperature Range, All Package Types TA −55 +125 °C tr, tf 0 0 100 20 ns/V Positive DC Supply Voltage Vcc = 3.3 V ± 0.3 V Vcc = 5.0 V ± 0.5 V Input Rise or Fall Time (Enable Input) Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 TIME, YEARS Figure 2. Failure Rate versus Time Junction Temperature www.onsemi.com 2 1000 NLAS1053 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol VCC *55_C to 25_C t85_C t125_C Unit Minimum High−Level Input Voltage, Select and Inhibit Inputs VIH 2.0 2.5 3.0 4.5 5.5 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 1.5 1.9 2.1 3.15 3.85 V Maximum Low−Level Input Voltage, Select and Inhibit Inputs VIL 2.0 2.5 3.0 4.5 5.5 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 0.5 0.6 0.9 1.35 1.65 V Parameter Condition Maximum Input Leakage Current, Select and Inhibit Inputs VIN = 5.5 V or GND IIN 0 V to 5.5 V $0.1 $1.0 $1.0 A Maximum Quiescent Supply Current Select and Inhibit = VCC or GND ICC 5.5 1.0 1.0 2.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Parameter Condition Symbol VCC 55 to 255C  855C  1255C Unit Maximum “ON” Resistance (Figures 17 − 23) VIN = VIL or VIH VIS = GND to VCC IINI ≤ 10.0 mA RON 2.5 3.0 4.5 5.5 70 40 20 16 85 46 28 22 105 52 34 28  ON Resistance Flatness (Figures 17 − 23) VIN = VIL or VIH IINI ≤ 10.0 mA VIS = 1V, 2V, 3.5V RFLAT 4.5 4 4 5  ON Resistance Match Between Channels VIN = VIL or VIH IINI ≤ 10.0 mA VCH1 or VCH0 = 3.5 V RON 4.5 2 2 3  CH1 or CH0 Off Leakage Current (Figure 9) VIN = VIL or VIH VCH1 or VCH0 = 1.0 VCOM 4.5 V ICH0 ICH1 5.5 1 10 100 nA COM ON Leakage Current (Figure 9) VIN = VIL or VIH VCH1 1.0 V or 4.5 V with VCH0 floating or VCH1 1.0 V or 4.5 V with VCH1 floating VCOM = 1.0 V or 4.5 V ICOM(ON) 5.5 1 10 100 nA (ON) (ON) www.onsemi.com 3 NLAS1053 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Max Limit 55 to 25_C VCC  85_C  125_C Test Conditions Symbol (V) Min Typ* Max Min Max Min Max Unit Turn−On Time (Figures 12 and 13) INH to Output RL = 300  CL = 35 pF (Figures 4 and 5) tON 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns Turn−Off Time (Figures 12 and 13) INH to Output RL = 300  CL = 35 pF (Figures 4 and 5) tOFF 2.5 3.0 4.5 5.5 2 2 1 1 7 5 4 3 12 10 9 8 2 2 1 1 15 15 12 12 2 2 1 1 15 15 12 12 ns Transition Time (Channel Selection Time) (Figure ) Select to Output RL = 300  CL = 35 pF (Figures and ) ttrans 2.5 3.0 4.5 5.5 5 5 2 2 18 13 12 9 28 21 16 14 5 5 2 2 30 25 20 20 5 5 2 2 30 25 20 20 ns Minimum Break−Before−Make Time VIS = 3.0 V (Figure 3) RL = 300  CL = 35 pF tBBM 2.5 3.0 4.5 5.5 1 1 1 1 12 11 6 5 Parameter 1 1 1 1 1 1 1 1 ns Typical @ 25, VCC = 5.0 V Maximum Input Capacitance, Select/INH Input Analog I/O (switch off) Common I/O (switch off) Feedthrough (switch on) CIN CNO or CNC CCOM C(ON) 8 10 10 20 pF *Typical Characteristics are at 25_C. ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Parameter Condition Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 10) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) Off−Channel Isolation (Figure 10) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figure 8) Total Harmonic Distortion THD + Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600  CL = 50 pF VIS = 5.0 VPP sine wave www.onsemi.com 4 Symbol VCC V Typical 25°C Unit BW 3.0 4.5 5.5 170 200 200 MHz VONL 3.0 4.5 5.5 −3 −3 −3 dB VISO 3.0 4.5 5.5 −93 −93 −93 dB 3.0 5.5 1.5 3.0 pC 5.5 0.1 % Q THD NLAS1053 VCC DUT VCC Input Output GND VOUT 0.1 F 300  tBMM 35 pF 90% of VOH 90% Output Switch Select Pin GND Figure 3. tBBM (Time Break−Before−Make) VCC DUT VCC Input Output 50% VOUT 0.1 F Open 50% 0V 300  VOH 35 pF 90% 90% Output INH Input VOL tON tOFF Figure 4. tON/tOFF VCC VCC Input DUT Output 300  50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL INH Input tOFF Figure 5. tON/tOFF www.onsemi.com 5 10% tON NLAS1053 VCC 0.1 F VCC Output Input VOUT GND 300  50% 50% 0V 35 pF VCC 90% Output Select Pin 10% GND ttrans ttrans Figure 6. ttrans (Channel Selection Time) 50  DUT Reference Transmitted Input Output 50  Generator 50  Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 8. Charge Injection: (Q) www.onsemi.com 6 On Off VOUT NLAS1053 0 10 −20 1 −40 Bandwidth (ON−RESPONSE) Off Isolation (dB) LEAKAGE (nA) 100 ICOM(ON) 0.1 −60 ICOM(OFF) 0.01 VCC = 5.0 V TA = 25_C −80 VCC = 5.0 V ICH(OFF) −100 0.01 0.001 −55 −20 25 70 85 125 0.1 TEMPERATURE (°C) 1 10 FREQUENCY (MHz) 100 200 Figure 10. Bandwidth and Off−Channel Isolation Figure 9. Switch Leakage versus Temperature 30 0 10 20 TIME (ns) PHASE (Degree) 25 20 15 VCC = 5.0 V TA = 25_C 0.01 ttrans (ns) 10 30 0.1 tON/tOFF (ns) 5 1 10 FREQUENCY (MHz) 0 2.5 100 200 3 4.5 Figure 12. tON and tOFF versus VCC at 255C 30 1 VCC = 4.5 V VINpp = 3.0 V VCC = 3.6 V THD + NOISE (%) 25 20 TIME (ns) 4 VCC (VOLTS) Figure 11. Phase versus Frequency 15 10 ttrans 0.1 VINpp = 5.0 V VCC = 5.5 V tON/tOFF 5 0 −55 3.5 0.01 −40 25 85 125 1 10 100 Temperature (°C) FREQUENCY (kHz) Figure 13. tON and tOFF versus Temp Figure 14. Total Harmonic Distortion Plus Noise versus Frequency www.onsemi.com 7 5 NLAS1053 3.0 100 2.5 10 1 VCC = 5 V 1.5 0.1 ICC (nA) Q (pC) 2.0 1.0 0.5 0.01 VCC = 3.0 V 0.001 VCC = 3 V 0 0.0001 −0.5 0 1 2 3 4 VCC = 5.0 V 0.00001 −40 5 −20 0 20 60 80 100 120 VCOM (V) Temperature (°C) Figure 15. Charge Injection versus COM Voltage Figure 16. ICC versus Temp, VCC = 3 V & 5 V 100 100 90 VCC = 2.0 V 80 80 RON () RON () 70 60 VCC = 2.5 V 40 VCC = 3.0 V 20 60 50 85°C 40 125°C 30 25°C 20 VCC = 4.5 V −55°C 10 0 0 0 1 2 3 4 0 5 0.5 1 2 2.5 VCOM (VOLTS) VCOM (VOLTS) Figure 17. RON versus VCOM and VCC (@ 255C Figure 18. RON versus VCOM and Temperature, VCC 2.0 V 70 40 60 35 25°C 30 RON () 50 RON () 1.5 40 30 125°C 25°C 20 125°C 15 85°C 20 10 85°C 10 25 −55°C −55°C 5 0 0 0 0.5 1 1.5 2 2.5 3 0 VCOM (VOLTS) 0.5 1 1.5 2 2.5 3 3.5 VCOM (VOLTS) Figure 20. RON versus VCOM and Temperature, VCC = 3.0 V Figure 19. RON versus VCOM and Temperature, VCC = 2.5 V www.onsemi.com 8 NLAS1053 20 18 18 16 16 125°C 12 12 RON () 85°C 10 8 10 85°C 8 −55°C 6 6 25°C 4 25°C −55°C 4 2 2 0 0 0 1 2 3 VCOM (VOLTS) 4 5 0 1 2 3 VCOM (VOLTS) 20 15 125°C 10 85°C 25°C 5 −55°C 0 0 1 2 4 5 6 Figure 22. RON versus VCOM and Temperature, VCC = 5.0 V Figure 21. RON versus VCOM and Temperature, VCC = 4.5 V RON () RON () 125°C 14 14 3 VCOM (VOLTS) 4 5 Figure 23. RON versus VCOM and Temperature, VCC = 5.5 V www.onsemi.com 9 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS US8 CASE 493 ISSUE F DATE 01 SEP 2021 SCALE 4 :1 GENERIC MARKING DIAGRAM* 8 XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04475D US8 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2021 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative