NLAS323USG

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Available in the US8 package. The use of advanced 0.6 micron CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • • On Resistance is 20  Typical at 5.0 V Matching is < 1.0  Between Sections 2.0 to 6.0 V Operating Range Ultra Low < 5.0 pC Charge Injection Ultra Low Leakage < 1.0 nA at 5.0 V, 25 C Wide Bandwidth > 200 MHz, −3.0 dB 2000 V ESD (Human Body Model) Ron Flatness $6.0  at 5.0 V US8 Package Independent, Positive Enable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant NO1 1 8 VCC COM1 2 7 IN1 IN2 3 6 COM2 GND 4 5 NO2 8 US8 US SUFFIX CASE 493 8 1 A4 MG G 1 A4 M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 NO1 2 COM1 3 IN2 4 GND 5 NO2 6 COM2 7 IN1 8 VCC FUNCTION TABLE On/Off Enable Input State of Analog Switch L H Off On Figure 1. Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 7 1 Publication Order Number: NLAS323/D NLAS323 MAXIMUM RATINGS Symbol Parameter Value Unit VCC DC Supply Voltage *0.5 to )7.0 V VI DC Input Voltage *0.5 to )7.0 V VO DC Output Voltage *0.5 to )7.0 V IIK DC Input Diode Current VI < GND *50 mA IOK DC Output Diode Current VO < GND *50 mA IO DC Output Sink Current $50 mA ICC DC Supply Current per Supply Pin $100 mA IGND DC Ground Current per Ground Pin $100 mA TSTG Storage Temperature Range *65 to )150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds TJ Junction Temperature under Bias JA Thermal Resistance PD Power Dissipation in Still Air at 85°C MSL Moisture Sensitivity FR Flammability Rating VESD ESD Withstand Voltage (Note 1) 260 °C )150 °C 250 °C/W 250 mW Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 150 N/A V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage (Enable) GND 5.5 V VIO Static or Dynamic Voltage Across an Off Switch GND VCC V VIS Analog Input Voltage (NO, COM) GND VCC V TA Operating Temperature Range, All Package Types −55 +125 °C tr, tf Input Rise or Fall Time, (Enable Input) 0 0 100 20 ns/V Vcc = 3.3 V + 0.3 V Vcc = 5.0 V + 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 TJ = 110°C Time, Years TJ = 120°C Time, Hours FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 130°C Junction Temperature 5C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 2. Failure Rate vs. Time Junction Temperature www.onsemi.com 2 NLAS323 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Max Limit Symbol Parameter Condition VCC −55 to 255C