NRVBS2040LNT3G

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN www.onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS Features • • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Characteristics • • • • • • • • Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8″ Weight: 95 mg (approximately) Maximum Temperature of 260°C / 10 Seconds for Soldering Cathode Polarity Band Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BKJL SMB CASE 403A MARKING DIAGRAM AYWW BKJLG G BKJL A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS2040LT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVBS2040LT3G* SMB (Pb−Free) 2,500 / Tape & Reel NRVBS2040LNT3G* SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2019 − Rev. 6 1 Publication Order Number: MBRS2040LT3/D MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 103°C) Symbol Value Unit VRRM VRWM VR 40 V IO Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 104°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) 2.0 4.0 70 A A A Tstg, TC −55 to +150 °C TJ −55 to +125 °C dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction−to−Lead (Note 1) Thermal Resistance — Junction−to−Ambient (Note 2) Symbol Value Unit RθJL RθJA 22.5 78 °C/W 1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (IF = 2.0 A) (IF = 4.0 A) VF Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) (VR = 20 V) IR Value Unit TJ = 25°C TJ = 125°C 0.43 0.50 0.34 0.45 TJ = 25°C TJ = 100°C 0.8 0.1 20 6.0 Volts mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 100 10 TJ = 100°C 1.0 TJ = 25°C TJ = 125°C TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 TJ = 25°C TJ = 100°C 0.1 0.2 0 0.4 0.6 0.8 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) TJ = 125°C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E-3 TJ = 125°C TJ = 100°C 1.0E-3 100E-6 TJ = 125°C 10E-3 TJ = 100°C 1.0E-3 100E-6 TJ = 25°C 10E-6 1.0E-6 TJ = 25°C 10E-6 1.0E-6 10 3.5 20 30 30 Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current SQUARE WAVE Ipk/Io = p 1.5 Ipk/Io = 5 1.0 Ipk/Io = 10 0.5 Ipk/Io = 20 0 20 20 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.0 10 VR, REVERSE VOLTAGE (VOLTS) dc 2.5 0 40 PFO , AVERAGE POWER DISSIPATION (WATTS) 0 I O , AVERAGE FORWARD CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 0 100 40 60 80 100 120 1.2 SQUARE WAVE 1.0 Ipk/Io = p dc 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 140 40 0.5 1.0 1.5 2.0 2.5 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 3.0 MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN TJ , DERATED OPERATING TEMPERATURE ( °C) C, CAPACITANCE (pF) 1000 TJ = 25°C 100 10 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 5.0 10 15 20 25 30 35 125 Rtja = 22.5°C/W 115 105 40 95 42°C/W 61°C/W 85 78°C/W 75 92°C/W 65 5.0 0 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0 50% 20% 10% 0.1 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 1.0 0.1 10 100 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient www.onsemi.com 4 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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