NRVBS540T3G

MBRS540T3G, NRVBS540T3G Surface Mount Schottky Power Rectifier The MBRS540T3 employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES, 40 VOLTS Features • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SMC 2−LEAD CASE 403AC MARKING DIAGRAM AYWW B540G G Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Polarity: Polarity Band on Plastic Body Indicates Cathode Lead ESD Rating: ♦ Machine Model, C (> 400 V) ♦ Human Body Model, 3B (> 8000 V) Device Meets MSL 1 Requirements B540 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS540T3G SMC (Pb−Free) 2,500 / Tape & Reel NRVBS540T3G* SMC (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2017 − Rev. 10 1 Publication Order Number: MBRS540T3/D NRVBS540T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 105°C) IF(AV) 5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 KHz, TC = 80°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 190 A Storage Temperature Range Tstg −65 to +150 °C TJ −65 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value RqJL 12 RqJA 111 Symbol Value Unit °C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 5.0 A, TC= 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 100°C) iR 0.50 0.3 15 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVBS540T3G TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 125°C 1 TJ = −40°C TJ = 100°C TJ = 25°C 0.1 0.10 0.30 0.20 TJ = −55°C 0.40 0.50 TJ = 125°C 1 TJ = 100°C TJ = 25°C TJ = −40°C 0.60 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 100°C 100E−6 10E−6 TJ = 25°C 1E−6 TJ = −55°C 10E−9 1E−9 100E−12 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 100E−9 0 10 20 30 VR, REVERSE VOLTAGE (V) 40 TJ = −55°C 10E−6 1E−6 0 10 20 30 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 9 PFO, AVERAGE POWER DISSIPATION (W) IO, AVERAGE FORWARD CURRENT (A) 8 7 6 5 4 3 SQUARE WAVE Ipk/IO = p Ipk/IO = 5 2 1 0 25 50 75 100 125 40 Figure 4. Maximum Reverse Current freq = 20 kHz dc 0.70 100E−3 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1E−3 0.60 0.50 0.40 Figure 2. Maximum Forward Voltage TJ = 125°C 10E−3 0.30 0.20 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 100E−3 TJ = −55°C 0.1 0.10 150 TL, LEAD TEMPERATURE (°C) 4.5 4 SQUARE WAVE 3.5 dc 3 2.5 2 Ipk/IO = p 1.5 Ipk/IO = 5 1 Ipk/IO = 10 0.5 0 Ipk/IO = 20 0 Figure 5. Current Derating 1 2 3 4 5 6 7 8 IO, AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation www.onsemi.com 3 9 NRVBS540T3G 1000 TJ, DERATED OPERATING TEMPERATURE (°C) TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25 °C 100 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) 35 40 125 RqJA = 12 °C/W 115 105 RqJA = 47 °C/W 95 RqJA = 81 °C/W 85 RqJA = 111 °C/W 75 RqJA = 136 °C/W 65 55 0 Figure 7. Capacitance 35 10 15 20 25 30 VR, DC REVERSE VOLTAGE (V) 5 40 45 Figure 8. Typical Operating Temperature Derating r(t), TRANSIENT THERMAL RESPONSE (C/W) 1000 100 D = 0.5 10 0.2 0.1 P(pk) 0.05 0.02 1 0.01 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 100 10 1000 t, TIME (s) r(t), TRANSIENT THERMAL RESPONSE (C/W) Figure 9. Thermal Response − MBRS540T3G, NRVBS540T3G on min pad 100 D = 0.5 0.2 10 0.1 P(pk) 0.05 1 0.02 0.01 0.1 0.00001 Test Type > min pad 1 oz RqJC = min pad 1 oz C/W t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.0001 0.001 0.1 0.01 1 10 t, TIME (s) Figure 10. Thermal Response − MBRS540T3G, NRVBS540T3G on 1” pad www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B DATE 27 JUL 2017 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. HE E D A1 DIM A A1 A2 b c D E HE L c DETAIL A TOP VIEW DETAIL A A2 L A b END VIEW SIDE VIEW INCHES MIN MAX 0.077 0.103 0.002 0.008 0.075 0.095 0.114 0.126 0.006 0.016 0.219 0.246 0.260 0.281 0.305 0.321 0.030 0.063 GENERIC MARKING DIAGRAM* AYWW XXXXG G RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 2X MILLIMETERS MIN MAX 1.95 2.61 0.05 0.20 1.90 2.41 2.90 3.20 0.15 0.41 5.55 6.25 6.60 7.15 7.75 8.15 0.75 1.60 XXXX A Y WW G 3.790 0.149 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 2X 2.250 0.089 mm Ǔ ǒinches SCALE 4:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON97675F SMC 2−LEAD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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