NRVUS160VT3G

DATA SHEET www.onsemi.com Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Rating: ♦ Human Body Model = 3B (> 8 kV) ♦ Charged Device Model > 1000 V © Semiconductor Components Industries, LLC, 20217 August, 2023 − Rev. 18 1 ULTRAFAST RECTIFIERS 1.0 AMPERE, 50−600 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW U1x G G A Y WW U1 = = = = Assembly Location* Year Work Week Device Code x = A, B, C, D, G, or J G = Pb−Free Package (Note: Microdot may be in either location) * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 2 of this data sheet. Publication Order Number: MURS120T3/D MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V MAXIMUM RATINGS MURS/SURS8/NRVUS Symbol 105T3 110T3 115T3 120T3 140T3 160T3 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 200 400 600 V Continuous Forward Current IF(DC) 1.0 @ TL = 159°C 2.0 @ TL = 139°C 1.0 @ TL = 159°C 2.0 @ TL = 139°C A Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 35 35 A Rating Operating Junction Temperature TJ *65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS MURS/SURS8/NRVUS Rating Symbol Thermal Resistance Junction−to−Lead (TL = 25°C) 105T3 115T3 110T3 RqJL 120T3 140T3 160T3 Unit °C/W 13 ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise noted) Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms, VR = 30 V) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) tfr Typical Peak Reverse Recovery Current (IF = 1.0 A, di/dt = 50 A/ms) IRM 0.875 0.71 1.25 1.05 2.0 50 5.0 150 35 25 75 50 25 50 0.75 1.60 V mA ns ns A 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. DEVICE MARKING AND ORDERING INFORMATION Marking Package Shipping† MURS105T3G, SURS8105T3G* U1A SMB (Pb−Free) 2,500 Units / Tape & Reel MURS110T3G, NRVUS110VT3G*, NRVUS110VT3G−GA01*, SURS8110T3G* U1B SMB (Pb−Free) 2,500 Units / Tape & Reel MURS115T3G, SURS8115T3G* U1C SMB (Pb−Free) 2,500 Units / Tape & Reel MURS120T3G, NRVUS120VT3G*, NRVUS120VT3G−GA01*, SURS8120T3G* U1D SMB (Pb−Free) 2,500 Units / Tape & Reel MURS140T3G, SURS8140T3G* U1G SMB (Pb−Free) 2,500 Units / Tape & Reel MURS160T3G, NRVUS160VT3G*, NRVUS160VT3G−GA01*, SURS8160T3G* U1J SMB (Pb−Free) 2,500 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 2 MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G, NRVUS110VT3G−GA01, NRVUS120VT3G−GA01 10 IR, REVERSE CURRENT (m A) 7.0 5.0 3.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 175°C 100°C 2.0 TC = 25°C 1.0 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175°C TJ = 100°C 0.08 0.04 0.02 0.008 0.004 0.002 0.7 TJ = 25°C 0 20 40 0.5 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.3 0.2 50 45 0.1 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF 40 C, CAPACITANCE (pF) 0.07 0.05 0.03 0.02 35 30 25 20 15 10 5.0 0.01 0.5 0.6 0.8 0.7 0.9 1.0 1.1 1.2 0 1.3 0 30 40 50 60 70 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance TJ = 175°C RqJL = 13°C/W 8 SQUARE WAVE (Duty = 0.5) 7 6 5 4 DC 3 2 1 0 40 20 Figure 1. Typical Forward Voltage 12 11 10 9 25 10 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(PK), PEAK FORWARD CURRENT (A) 0.3 0.4 55 70 85 100 115 130 145 160 175 100 5.0 TJ = 175°C 4.0 5.0 I 10 (CAPACITANCELOAD) PK + 20 I 3.0 AV 2.0 DC SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 TL, LEAD TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Forward Current Derating of Lead Temperature Figure 5. Power Dissipation www.onsemi.com 3 90 2.5 MURS105, MURS110, MURS115, MURS120, MURS140, MURS160, SURS8105, SURS8110, SURS8120, SURS8140, SURS8160, NRVUS110V, NRVUS120V, NRVUS160V MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G, NRVUS160VT3G−GA01 10 IR, REVERSE CURRENT (m A) 7.0 175°C 5.0 100°C 3.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F TC = 25°C 2.0 1.0 0.7 400 200 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 TJ = 175°C TJ = 100°C TJ = 25°C 0 100 200 0.5 300 400 500 600 700 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.3 0.2 25 0.1 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF C, CAPACITANCE (pF) 20 0.05 0.03 0.02 15 10 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 4.0 8.0 Figure 6. Typical Forward Voltage 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) 12 11 10 9 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(PK), PEAK FORWARD CURRENT (A) Figure 8. Typical Capacitance TJ = 175°C RqJL = 13°C/W 8 SQUARE WAVE (Duty = 0.5) 7 6 5 4 DC 3 2 1 0 25 40 55 70 85 100 115 130 145 160 175 5.0 4.0 5.0 10 (CAPACITANCE LOAD) I PK + 20 I SQUARE WAVE AV 3.0 DC TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C) Figure 9. Forward Current Derating of Lead Temperature Figure 10. Power Dissipation www.onsemi.com 4 2.5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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