NSS1C200MZ4T3G

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. www.onsemi.com −100 VOLTS, 2.0 AMPS PNP LOW VCE(sat) TRANSISTOR COLLECTOR 2,4 1 BASE 3 EMITTER Features • NSV Prefix for Automotive and Other Applications Requiring • MARKING DIAGRAM Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant SOT−223 CASE 318E STYLE 1 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −100 Vdc Collector-Base Voltage VCBO −140 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Base Current − Continuous IB 1.0 A Collector Current − Continuous IC 2.0 A ICM 3.0 A Symbol Max Unit 800 6.5 mW mW/°C 155 °C/W Collector Current − Peak A Y W 1C200 G 1 = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package PIN ASSIGNMENT THERMAL CHARACTERISTICS 4 Characteristic Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range C B C E 1 2 3 Top View Pinout 2.0 15.6 W mW/°C RqJA (Note 2) 64 °C/W Device Package Shipping† TJ, Tstg −55 to +150 °C NSS1C200MZ4T1G NSV1C200MZ4T1G SOT−223 (Pb−Free) 1000/ Tape & Reel NSS1C200MZ4T3G SOT−223 (Pb−Free) 4000/ Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 7.6 mm2, 1 oz. copper traces. 2. FR− 4 @ 645 mm2, 1 oz. copper traces. © Semiconductor Components Industries, LLC, 2013 March, 2021− Rev. 6 AYW 1C200G 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSS1C200MZ4/D NSS1C200MZ4, NSV1C200MZ4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −100 Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −140 Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −7.0 Vdc OFF CHARACTERISTICS Collector Cutoff Current (VCB = −140 Vdc, IE = 0) ICBO −100 nAdc Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO −50 nAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) (IC = −2.0 A, IB = −0.200 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.100 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −1.0 A, VCE = −2.0 V) VBE(on) 150 120 80 50 360 V −0.040 −0.080 −0.125 −0.220 V −0.950 V −0.850 Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT Input Capacitance (VEB = 3.0 V, f = 1.0 MHz) Cibo 200 pF Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo 22 pF 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. www.onsemi.com 2 MHz 120 NSS1C200MZ4, NSV1C200MZ4 TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (W) 2.5 2.0 TC 1.5 1.0 TA 0.5 0 25 50 75 100 125 150 T, TEMPERATURE (°C) Figure 1. Power Derating R(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 1000 50% Duty Cycle 100 10 1 20% 10% 5% 2% 1% 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (sec) Figure 2. Thermal Resistance (FR−4 @ 7.6 mm2, 1 oz. Cu trace) R(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (sec) Figure 3. Thermal Resistance (FR−4 @ 645 mm2, 1 oz. Cu trace) www.onsemi.com 3 NSS1C200MZ4, NSV1C200MZ4 TYPICAL CHARACTERISTICS 500 VCE = 2 V 150°C 400 300 25°C 200 −55°C 100 0 0.001 0.01 0.1 1 400 300 −55°C 100 0 10 0.001 0.01 Figure 4. DC Current Gain Figure 5. DC Current Gain 150°C 25°C −55°C 0.001 0.01 0.1 1 IC/IB = 20 150°C 0.1 −55°C 0.01 10 25°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 1 10 Figure 7. Collector−Emitter Saturation Voltage 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Collector−Emitter Saturation Voltage IC/IB = 10 1.0 0.8 −55°C 0.2 10 1 0.1 0.4 1 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.6 0.1 IC, COLLECTOR CURRENT (A) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 25°C 200 1 0.01 VCE = 4 V 150°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 500 25°C 150°C 0.001 0.01 0.1 1 10 IC/IB = 50 1.0 0.8 −55°C 25°C 0.6 0.4 0.2 150°C 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 8. Base−Emitter Saturation Voltage Figure 9. Base−Emitter Saturation Voltage www.onsemi.com 4 10 NSS1C200MZ4, NSV1C200MZ4 1.2 1 VCE = 2 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.001 0.01 0.1 1 10 IC = 0.1 A TJ = 25°C 0.0001 0.001 0.01 0.1 1 IB, BASE CURRENT (A) Figure 10. Base−Emitter Voltage Figure 11. Collector Saturation Region 120 Cob, OUTPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) 0.5 A 0.1 IC, COLLECTOR CURRENT (A) TJ = 25°C ftest = 1 MHz 300 200 100 0 1 2 3 4 5 6 7 80 60 40 20 0 10 20 30 40 50 60 70 80 VCB, COLLECTOR BASE VOLTAGE (V) Figure 12. Input Capacitance Figure 13. Output Capacitance 90 100 10 TJ = 25°C ftest = 1 MHz VCE = 10 V 60 40 20 0 80 VBE, EMITTER BASE VOLTAGE (V) IC, COLLECTOR CURRENT (A) 100 TJ = 25°C ftest = 1 MHz 100 0 8 120 fTau, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) 1.0 A 0.01 400 0 3.0 A 2.0 A 0.001 0.01 0.1 0.5 mS 1 1 mS 10 mS 0.1 TJ = 25°C 0.01 1 100 mS 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 14. Current−Gain Bandwidth Product Figure 15. Safe Operating Area www.onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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