NSS20601CF8T1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. •This is a Pb-Free Device http://onsemi.com 20 VOLTS, 8.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 31 mW COLLECTOR 1, 2, 3, 6, 7, 8 4 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector‐Emitter Voltage VCEO 20 Vdc Collector‐Base Voltage VCBO 20 Vdc Emitter‐Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 6.0 Adc Collector Current - Peak ICM 8.0 A Electrostatic Discharge ESD HBM Class 3B MM Class C 5 EMITTER 8 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 830 6.7 mW mW/°C RqJA (Note 1) 150 °C/W PD (Note 2) 1.4 11.1 W mW/°C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 90 °C/W Thermal Resistance, Junction-to-Lead #1 RqJL (Note 2) 15 Junction and Storage Temperature Range TJ, Tstg -55 to +150 Thermal Resistance, Junction-to-Ambient Total Device Dissipation, TA = 25°C Derate above 25°C ChipFET] CASE 1206A STYLE 4 VD M G VD = Specific Device Code M = Month Code G = Pb-Free Package PIN CONNECTIONS C 8 1 C °C/W C 7 2 C °C C 6 3 C E 5 4 B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. ORDERING INFORMATION Device Package Shipping† NSS20601CF8T1G ChipFET (Pb-Free) 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 1 1 Publication Order Number: NSS20601CF8/D NSS20601CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max 20 - - 20 - - 6.0 - - - - 0.1 - - 0.1 200 200 200 200 200 365 - - - 0.007 0.031 0.060 0.090 0.110 0.110 0.010 0.065 0.080 0.110 0.130 0.130 - 0.760 0.900 - 0.720 0.900 140 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 6.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) (IC = 3.0 A, VCE = 2.0 V) Collector-Emitter Saturation Voltage (Note 3) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.020 A) (IC = 3.0 A, IB = 0.030 A) (IC = 4.0 A, IB = 0.400 A) VCE(sat) Base-Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.01 A) VBE(sat) Base-Emitter Turn-on Voltage (Note 3) (IC = 2.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) fT V V V MHz Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo - - 1100 pF Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo - - 100 pF Delay (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) td - - 110 ns Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tr - - 130 ns Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) ts - - 850 ns Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tf - - 130 ns SWITCHING CHARACTERISTICS 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 NSS20601CF8T1G TYPICAL CHARACTERISTICS 0.30 IC/IB = 10 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.25 0.20 150°C 0.15 25°C 0.10 -55 °C 0.05 IC/IB = 100 0.20 0.15 25°C 0.10 -55 °C 0.05 0 0 0.001 0.01 0.1 1 0.001 10 0.01 IC, COLLECTOR CURRENT (A) 1 10 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.3 650 150°C (5.0 V) 550 1.2 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 600 hFE, DC CURRENT GAIN 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 150°C (2.0 V) 500 450 400 25°C (5.0 V) 350 25°C (2.0 V) 300 250 -55 °C (5.0 V) 200 150 -55 °C (2.0 V) 0.001 0.01 0.1 IC/IB = 10 1.1 1.0 -55 °C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 1 0.001 10 IC, COLLECTOR CURRENT (A) -55 °C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.001 0.01 0.1 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE = 2.0 V 0.9 0.1 1 10 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.1 1.0 0.01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 150°C 0.25 1.0 IC = 500 mA 10 mA 0.8 300 mA 100 mA 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS20601CF8T1G TYPICAL CHARACTERISTICS Cobo, OUTPUT CAPACITANCE (pF) 140 950 Cibo (pF) 900 850 800 750 700 650 600 550 500 450 130 Cobo (pF) 120 110 100 90 80 70 60 50 0 1 2 4 3 5 0 6 5 10 15 20 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1.0 S 1.0 mS 10 mS 100 mS 1 IC (A) Cibo, INPUT CAPACITANCE (pF) 1000 Thermal Limit 0.1 Single Pulse Test at Tamb = 25°C 0.01 0.01 0.1 1 10 VCE (Vdc) Figure 9. Safe Operating Area ChipFET is a trademark of Vishay Siliconix. http://onsemi.com 4 100 25 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ChipFETt CASE1206A−03 ISSUE K 8 DATE 19 MAY 2009 1 SCALE 1:1 D 8 7 q 6 L 5 HE 5 6 7 8 4 3 2 1 E 1 2 3 e1 4 b e DIM A b c D E e e1 L HE q c RESET A 0.05 (0.002) STYLE 1: PIN 1. DRAIN 2. DRAIN 3. DRAIN 4. GATE 5. SOURCE 6. DRAIN 7. DRAIN 8. DRAIN STYLE 2: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 STYLE 3: PIN 1. ANODE 2. ANODE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. CATHODE 8. CATHODE STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR MILLIMETERS NOM MAX 1.05 1.10 0.30 0.35 0.15 0.20 3.05 3.10 1.65 1.70 0.65 BSC 0.55 BSC 0.28 0.35 0.42 1.80 1.90 2.00 5° NOM MIN 1.00 0.25 0.10 2.95 1.55 INCHES NOM 0.041 0.012 0.006 0.120 0.065 0.025 BSC 0.022 BSC 0.014 0.011 0.071 0.075 5° NOM MIN 0.039 0.010 0.004 0.116 0.061 MAX 0.043 0.014 0.008 0.122 0.067 0.017 0.079 STYLE 6: STYLE 5: PIN 1. ANODE PIN 1. ANODE 2. DRAIN 2. ANODE 3. DRAIN 3. DRAIN 4. DRAIN 4. GATE 5. SOURCE 5. SOURCE 6. DRAIN 6. GATE 7. CATHODE 7. DRAIN 8. CATHODE 8. CATHODE / DRAIN GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 2.032 0.08 xxx MG G 2.362 0.093 0.65 0.025 PITCH xxx = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 8X 8X 0.66 0.026 0.457 0.018 mm Ǔ ǒinches Basic Style OPTIONAL SOLDERING FOOTPRINTS ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98AON03078D ChipFET Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ChipFETt CASE 1206A−03 ISSUE K DATE 19 MAY 2009 ADDITIONAL SOLDERING FOOTPRINTS* 1 2.032 0.08 2.032 0.08 1 4X 0.457 0.018 2X 1.092 0.043 1.727 0.068 2.362 0.093 2.362 0.093 0.65 0.025 PITCH 4X 2X 2X 0.457 0.018 0.66 0.026 mm Ǔ ǒinches Styles 1 and 4 2.032 0.08 1.118 0.044 mm Ǔ ǒinches Style 2 2.032 0.08 2X 0.66 0.026 1 2X 0.66 0.026 1 1.092 0.043 2X 0.66 0.026 1.092 0.043 2.362 0.093 2.362 0.093 0.65 0.025 PITCH 2X 0.65 0.025 PITCH 1.118 0.044 0.457 0.018 1.118 0.044 ǒ mm inches 2X Ǔ 0.457 0.018 mm Ǔ ǒinches Style 5 Style 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON03078D ChipFET Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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