NST856BF3T5G

NST856BF3T5G PNP General Purpose Transistor The NST856BF3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com COLLECTOR 3 Features • • • • • hFE, 220−475 Low VCE(sat), ≤ −0.3 V Reduces Board Space This is a Halide−Free Device This is a Pb−Free Device 1 BASE 2 EMITTER NST856BF3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −65 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −100 mAdc Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 290 2.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 347 2.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 360 °C/W Thermal Resistance, Junction−to−Lead 3 RYJL (Note 2) 143 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 3 1 2 SOT−1123 CASE 524AA STYLE 1 THERMAL CHARACTERISTICS Characteristic Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 1 1 MARKING DIAGRAM AM A M = Device Code = Date Code ORDERING INFORMATION Device NST856BF3T5G Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST856BF3/D NST856BF3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −65 − − V Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) V(BR)CES −80 − − V Collector −Base Breakdown Voltage (IC = −10 mA) V(BR)CBO −80 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V ICBO − − − − −15 −4.0 nA mA − 220 150 290 − 475 − − − − −0.3 −0.8 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cobo − − 4.5 pF Input Capacitance (VEB = −0.5 V, IC = 0 mA, f = 1.0 MHz) Cibo − − 10 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) 0.16 800 IC/IB = 10 0.14 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 VCE(sat) = 150°C 0.12 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 700 600 150°C (5.0 V) 150°C (1.0 V) 500 25°C (5.0 V) 400 300 200 100 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 0 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 2 NST856BF3T5G 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 1.0 10 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 30 mA 0.4 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 9 8 7 6 Cib 5 4 3 0 1.0 2.0 3.0 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 4.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 4.0 3.5 3.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 3 30 5.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−1123 CASE 524AA ISSUE C SCALE 8:1 DATE 29 NOV 2011 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− 1 3 2 E TOP VIEW A DIM A b b1 c D E e HE L L2 HE c SIDE VIEW 3X b L2 GENERIC MARKING DIAGRAM* 0.08 X Y e 2X 3X b1 XM L X M BOTTOM VIEW 1.20 0.34 0.26 1 0.38 = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 3X MILLIMETERS MIN MAX 0.34 0.40 0.15 0.28 0.10 0.20 0.07 0.17 0.75 0.85 0.55 0.65 0.35 0.40 0.95 1.05 0.185 REF 0.05 0.15 2X 0.20 PACKAGE OUTLINE DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE 98AON23134D STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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