RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
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Features
•
•
•
•
•
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
MAXIMUM RATINGS
Rating
2
Symbol
Value
Unit
VRM
40
V
Reverse Voltage
VR
30
Vdc
Forward Continuous Current (DC)
IF
30
mA
Peak Forward Surge Current
IFSM
500
mA
Electrostatic Discharge
ESD
Peak Reverse Voltage
2
ANODE
1
SOD−323
CASE 477
STYLE 1
HBM Class: 1C
MM Class: A
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
200
mW
1.57
mW/°C
Thermal Resistance
Junction−to−Ambient
RqJA
635
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
5E MG
G
5E = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
RB751V40T1G
SOD−323
(Pb−Free)
3000 / Tape &
Reel
NSVRB751V40T1G
SOD−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
RB751V40T1/D
RB751V40T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
−
2.0
2.5
pF
Reverse Leakage
(VR = 30 V)
IR
−
300
500
nAdc
Forward Voltage
(IF = 1.0 mAdc)
VF
−
0.28
0.37
Vdc
Reverse Breakdown Voltage
(IR = 10 μA)
820 Ω
+10 V
2k
100 μH
0.1 μF
IF
IF
tr
0.1 μF
tp
t
trr
t
10%
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
RB751V40T1G
1000
IR , REVERSE CURRENT (μA)
1.0
150°C
TA = 150°C
100
125°C
10
85°C
1.0
0.1
25°C
0.01
125°C
85°C
25°C
-40°C
-55°C
0.3
0.4
0.001
0.1
0
0.05
0.1
0.15
0.2
0.25
0.35
0.45
0.5
5
0
10
15
20
25
VR, REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Typical Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
0
2.0
4.0
30
Figure 3. Reverse Current versus Reverse
Voltage
3.0
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
10
6.0
8.0
10
12
14
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Capacitance
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3
16
18
35
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
2
1
STYLE 1
SOD−323
CASE 477−02
ISSUE H
2
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
A3
A
C
NOTE 3
DATE 13 MAR 2007
1
STYLE 2
L
A1
NOTE 5
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
XX M
0.63
0.025
STYLE 1
0.83
0.033
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DESCRIPTION:
98ASB17533C
SOD−323
STYLE 2
XX = Specific Device Code
M = Date Code
1.60
0.063
DOCUMENT NUMBER:
XX M
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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