NTBG020N120SC1

MOSFET - SiC Power, Single N-Channel, D2PAK-7L 1200 V, 20 mW, 98 A NTBG020N120SC1 Features • • • • • • www.onsemi.com Typ. RDS(on) = 20 mW Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) 100% Avalanche Tested TJ = 175°C RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 1200 V 28 mW @ 20 V 98 A Drain (TAB) Typical Applications • UPS • DC/DC Converter • Boost Inverter Gate (Pin 1) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Driver Source (Pin 2) Power Source (Pin 3, 4, 5, 6, 7) Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V TC < 175°C VGSop −5/+20 V TC = 25°C ID 98 A PD 468 W ID 8.6 A D2PAK−7L CASE 418BJ PD 3.7 W MARKING DIAGRAM IDM 392 A TJ, Tstg −55 to +175 °C AYWWZZ NTBG 020120SC1 IS 46 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23 A, L = 1 mH) (Note 4) EAS 264 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Recommended Operation Values of Gate−to−Source Voltage Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Continuous Drain Current (Notes 1, 2) Steady State TA = 25°C Power Dissipation (Notes 1, 2) Pulsed Drain Current (Note 3) TA = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 June, 2021 − Rev. 3 1 N−CHANNEL MOSFET A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NTBG020120SC1 = Specific Device Code ORDERING INFORMATION Device Package Shipping† NTBG020N120SC1 D2PAK−7L 800 ea/ Tape&Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTBG020N120SC1/D NTBG020N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 2) Parameter RqJC 0.32 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RqJA 41 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min 1200 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 1200 V V 0.5 V/°C TJ = 25°C 100 mA TJ = 175°C 1 mA ±1 mA IGSS VGS = +25/−15 V, VDS = 0 V VGS(TH) VGS = VDS, ID = 20 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) 1.8 2.7 −5 4.3 V +20 V mW VGS = 20 V, ID = 60 A, TJ = 25°C 20 28 VGS = 20 V, ID = 60 A, TJ = 175°C 35 50 VDS = 20 V, ID = 60 A 34 S VGS = 0 V, f = 1 MHz, VDS = 800 V 2943 pF gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 258 CRSS 24 VGS = −5/20 V, VDS = 600 V, ID = 80 A nC Total Gate Charge QG(TOT) 220 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 66 Gate−to−Drain Charge QGD 63 Gate−Resistance RG f = 1 MHz 1.6 td(ON) VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2 W inductive load 22 35 20 32 42 67 9 18 33 W SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) tf Turn−On Switching Loss EON 461 Turn−Off Switching Loss EOFF 400 Etot 861 Total Switching Loss ns mJ DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current VGS = −5 V, TJ = 25°C ISD 46 A Pulsed Drain−Source Diode Forward Current (Note 3) ISDM Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25°C 3.7 V Reverse Recovery Time tRR VGS = −5/20 V, ISD = 80 A, dIS/dt = 1000 A/ms 31 ns 228 nC Reverse Recovery Charge QRR 392 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTBG020N120SC1 TYPICAL CHARACTERISTICS 2.5 20 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 250 200 VGS = 16 V 150 19 V 18 V 100 17 V 50 0 2 0 4 19 V 18 V 1.0 17 V 0 50 100 150 250 200 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 160 RDS(on), ON−RESISTANCE (mW) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 20 V ID, DRAIN CURRENT (A) ID = 60 A VGS = 20 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 100 125 150 175 120 80 TJ = 150°C 40 TJ = 25°C 5 10 20 15 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) VDS = 20 V 100 80 60 TJ = 175°C 40 TJ = 25°C 20 TJ = −55°C 2 ID = 60 A 0 120 ID, DRAIN CURRENT (A) 1.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.9 0 2.0 0.5 10 8 6 VGS = 16 V 4 6 8 10 12 14 300 TJ = 175°C TJ = −55°C 30 3 16 TJ = 25°C VGS = −5 V 1 2 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 3 8 NTBG020N120SC1 20 100K VDD = 400 V 15 VDD = 600 V VDD = 800 V C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10 5 0 −5 50 0 100 150 200 1K Coss 100 Crss 10 1 250 f = 1 MHz VGS = 0 V 0.1 Figure 8. Capacitance vs. Drain−to−Source Voltage 800 120 10 TJ = 150°C 100 VGS = 20 V 80 60 40 20 Typical Characteristics 0.001 0.01 0.1 1 0 100 10 RqJC = 0.32°C/W 50 25 75 100 125 150 tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 2000 1000 175 P(PK), PEAK TRANSIENT POWER (w) 100K 100 10 ms This Area is Limited by RDS(on) 10 0.1 100 Figure 7. Gate−to−Source Voltage vs. Total Charge TJ = 25°C 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 1 Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Ciss ID = 80 A 500 ID, DRAIN CURRENT (A) 10K TC = 25°C Single Pulse TJ = Max Rated RqJC = 0.32°C/W 0.1 1 100 ms 1 ms Curve Bent to Measured Data 10 100 10 ms 100 ms 1000 5000 Single Pulse RqJC = 0.32°C/W TC = 25°C 10K 1K 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 0.1 NTBG020N120SC1 r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 2 1 50% Duty Cycle 20% 0.1 10% 5% 2% 0.01 0.001 1% P DM Single Pulse t1 t2 0.00001 0.0001 0.001 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.32°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.01 t, RECTANGULAR PULSE DURATIONTIME (s) Figure 13. Junction−to−Case Transient Thermal Response Curve www.onsemi.com 5 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B DATE 16 AUG 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON84234G D2PAK7 (TO−263−7L HV) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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