NTBG045N065SC1

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 mW, 62 A NTBG045N065SC1 Features • Typ. RDS(on) = 31 mW @ VGS = 18 V • • • • • www.onsemi.com Typ. RDS(on) = 45 mW @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 105 nC) Low Effective Output Capacitance (Coss = 168 pF) 100% Avalanche Tested TJ = 175°C RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX 650 V 50 mW @ 18 V 62 A Drain (TAB) Typical Applications • • • • SMPS (Switching Mode Power Supplies) Solar Inverters UPS (Uninterruptable Powere Supplies) Energy Storages Gate (Pin 1) Driver Source (Pin 2) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Power Source (Pins 3, 4, 5, 6, 7) Drain−to−Source Voltage VDSS 650 V N−CHANNEL MOSFET Gate−to−Source Voltage VGS −8/+22 V VGSop −5/+18 V ID 62 A PD 242 W ID 44 A PD 121 W Parameter Recommended Operation Values of Gate − Source Voltage Continuous Drain Current (Note 2) Power Dissipation (Note 2) Continuous Drain Current (Notes 1, 2) Power Dissipation (Notes 1, 2) Steady State Steady State Pulsed Drain Current (Note 3) TC < 175°C TC = 25°C TC = 100°C TC = 25°C Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL = 12 Apk, L = 1 mH) (Note 4) Maximum Lead Temperature for Soldering, 1/8″ from Case for 10 Seconds IDM 184 A TJ, Tstg −55 to +175 °C IS 56 A EAS 72 mJ TL 245 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 72 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 12 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2020 March, 2021 − Rev. 0 1 D2PAK−7L CASE 418BJ MARKING DIAGRAM BG045N 065SC1 AYWWZZ BG045N065SC1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: NTBG045N065SC1/D NTBG045N065SC1 THERMAL CHARACTERISTICS Parameter Symbol Max Units Junction−to−Case − Steady State (Note 2) RθJC 0.62 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RθJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 650 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ − 0.13 − V/°C TJ = 25°C − − 10 mA TJ = 175°C − − 1 mA OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS ID = 20 mA, refer to 25°C VGS = 0 V VDS = 650 V IGSS VGS = +18/−5 V, VDS = 0 V − − 250 nA VGS(TH) VGS = VDS , ID = 8 mA 1.8 2.8 4.3 V ON CHARACTERISTICS Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGOP RDS(on) gFS −5 − +18 V VGS = 15 V, ID = 25 A, TJ = 25°C − 45 − mW VGS = 18 V, ID = 25 A, TJ = 25°C − 31 50 VGS = 18 V, ID = 25 A, TJ = 175°C − 40 − VDS = 10 V, ID = 25 A − 16 − S − 1890 − pF − 168 − − 15 − CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) nC − 105 − VGS = −5/18 V, VDS = 520 V, ID = 25 A − 27 − − 30 − f = 1 MHz − 3.1 − W td(ON) − 13 − ns tr − 14 − − 26 − − 7 − − 47 − Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance VGS = 0 V, f = 1 MHz, VDS = 325 V RG SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) tf VGS = −5/18 V, VDS = 400 V, ID = 25 A, RG = 2.2 W, Inductive Load Turn−On Switching Loss EON Turn−Off Switching Loss EOFF − 33 − Total Switching Loss ETOT − 80 − VGS = −5 V, TJ = 25°C − − 56 A VGS = −5 V, TJ = 25°C − − 184 A VGS = −5 V, ISD = 25 A, TJ = 25°C − 4.4 − V mJ SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward Current ISD Pulsed Source−Drain Diode Forward Current (Note 3) ISDM Forward Diode Voltage VSD www.onsemi.com 2 NTBG045N065SC1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS Reverse Recovery Time tRR − 20 − ns Reverse Recovery Charge QRR − 100 − nC Reverse Recovery Energy EREC − 3.8 − mJ Peak Reverse Recovery Current IRRM − 10 − A VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/ms Charge time Ta − 11 − ns Discharge time Tb − 8.7 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NTBG045N065SC1 TYPICAL CHARACTERISTICS 4 VGS = 18 V 15 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 120 100 12 V 80 60 10 V 40 9V 20 0 8V 0 2 4 6 8 18 V 1 0 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 140 1.3 RDS(on), ON−RESISTANCE (mW) ID = 25 A VGS = 18 V 1.2 1.1 1.0 0.9 0 25 50 75 TJ = 25°C 100 80 TJ = 150°C 60 40 20 7 8 9 10 11 12 13 14 15 16 17 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 120 TJ = 175°C VDS = 10 V 100 80 TJ = 25°C TJ = −55°C 60 40 20 3 ID = 25 A 120 0 100 125 150 175 IS, REVERSE DRAIN CURRENT (A) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 15 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.8 −75 −50 −25 ID, DRAIN CURRENT (A) 2 10 1.4 0 VGS = 12 V 3 6 9 12 15 120 100 VGS = −5 V TJ = 175°C TJ = 25°C 10 TJ = −55°C 1 2 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 18 8 NTBG045N065SC1 20 10000 ID = 25 A VDD = 390 V 15 Ciss VDD = 650 V 10 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 520 V 5 1000 0 −5 0 20 40 60 80 Qg, GATE CHARGE (nC) 100 Coss 100 Crss 10 1 0.1 120 f = 1 MHz VGS = 0 V 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 70 ID, DRAIN CURRENT (A) TJ = 25°C 10 0.001 0.01 40 30 20 10 1 0.1 50 75 100 125 150 Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 ms 10 1 ms 10 ms Single Pulse TJ = 175°C RqJC = 0.62°C/W TC = 25°C 0.1 25 TC, CASE TEMPERATURE (°C) 10 ms 1 RqJC = 0.62°C/W tAV, TIME IN AVALANCHE (ms) 200 0.1 50 0 100 ID, DRAIN CURRENT (A) VGS = 18 V 60 1 DC 10 100 P(PK), PEAK TRANSIENT POWER (W) IAS, AVALANCHE CURRENT (A) 100 1 650 1000 20000 Single Pulse RqJC = 0.62°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 1 NTBG045N065SC1 RqJC(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE TYPICAL CHARACTERISTICS 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 Notes: RqJC = 0.62°C/W Duty Cycle, D = t1/t2 0.01 0.1 t, PULSE TIME (s) Figure 13. Junction−to−Case Transient Thermal Response DEVICE ORDERING INFORMATION Device Package Shipping† NTBG045N065SC1 D2PAK−7L 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 NTBG045N065SC1 PACKAGE DIMENSIONS D2PAK7 (TO−263−7L HV) CASE 418BJ ISSUE B www.onsemi.com 7 NTBG045N065SC1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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