NTGD1100LT1

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF www.onsemi.com RDS(on) TYP V(BR)DSS 40 m @ −4.5 V 8.0 V ±3.3 A 55 m @ −2.5 V 80 m @ −1.8 V SIMPLIFIED SCHEMATIC 4 2,3 Q2 Features • • • • • • • ID MAX 6 Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 2000 V These Devices are Pb−Free and are RoHS Compliant Q1 5 1 MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Input Voltage (VDSS, P−Ch) ON/OFF Voltage (VGS, N−Ch) Continuous Load Current Steady (Note 1) State TA = 25°C Power Dissipation (Note 1) TA = 25°C Steady State Pulsed Load Current Symbol Value Unit VIN 8.0 V VON/OFF 8.0 V ±3.3 A IL TA = 85°C ±2.4 PD TA = 85°C tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL−STD−883D HBM (100 pF, 1.5 k) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 0.43 ILM ±10 A TJ, TSTG −55 to 150 °C IS −1.0 A ESD 2.0 kV TL 260 °C December, 2019 − Rev. 12 1 G1 5 S2 4 1 TZ M G G TSOP−6 CASE 318G STYLE 11 1 S1 W 0.83 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). © Semiconductor Components Industries, LLC, 2015 D1/G2 6 TZ M G 2 3 D2 D2 = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGD1100LT1G Package Shipping† TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGD1100L/D NTGD1100L THERMAL RESISTANCE RATINGS Rating Symbol Max Unit Junction−to−Ambient – Steady State (Note 2) RJA 150 °C/W Junction−to−Foot – Steady State (Note 2) RJF 50 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min Q2 Drain−to−Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = −250 A 8.0 Forward Leakage Current IFL Typ Max Unit 1.0 A OFF CHARACTERISTICS V TJ = 25°C VGS1 = 0 V, VDS1 = 8.0 V 10 TJ = 125°C Q2 Gate−to−Source Leakage Current IGSS VDS2 = 0 V, VGS2 = ±8.0 V Q2 Diode Forward On−Voltage VSD IS = −1.0 A, VGS2 = 0 V ±100 nA −1.0 V 1.5 8.0 V −0.7 ON CHARACTERISTICS Voltage ON/OFF VON/OFF Q1 Gate Threshold Voltage Input Voltage Q2 Drain−to−Source On Resistance VGS1 VGS1 = VDS1, ID = 50 A 0.6 1.2 V VIN VGS2 = VDS2, ID = 250 A 1.8 8.0 V m RDS(on) Load Current VON/OFF = 1.5 V, IL = 1.0 A IL VIN = 4.5 V 40 55 VIN = 2.5 V 55 70 VIN = 1.8 V 80 140 VDROP ≤ 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V 1.0 VDROP ≤ 0.2 V, VIN = 2.5 V, VON/OFF = 1.5 V 1.0 VDROP ≤ 0.2 V, VIN = 1.8 V, VON/OFF = 1.5 V 1.0 A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4 VIN 2,3 Q2 R1 C1 6 ON/OFF VOUT 6 5 CO LOAD Q1 1 CI R2 R2 GND Figure 1. Load Switch Application Components Description Values R1 Pullup Resistor Typical 10 k to 1.0 M R2 Optional Slew−Rate Control Typical 0 to 100 k C0 Output Capacitance Usually < 1.0 F C1 Optional In−Rush Current Control Typical ≤ 1000 pF www.onsemi.com 2 NTGD1100L TYPICAL CHARACTERISTICS 0.300 0.400 0.350 0.250 0.250 VDROP, (V) VDROP, (V) 0.300 TJ = 125°C 0.200 0.150 TJ = 25°C 0.200 TJ = 125°C 0.150 TJ = 25°C 0.100 0.100 0.050 0.050 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 IL, (A) IL, (A) Figure 3. VDROP vs. IL @ VIN = 4.5 V TJ = 125°C TJ = 25°C IL = 1.0 A VON/OFF = 1.5 to 8.0 V 0 1.00 2.00 3.00 4.00 5.00 6.00 7.00 RDS(on), DRAIN−TO−SOURCE RESISTANCE () 0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 8.00 0.15 0.14 IL = 1.0 A 0.13 VON/OFF = 1.5 to 8.0 V 0.12 0.11 0.10 VIN = 1.8 V 0.09 0.08 0.07 0.06 VIN = 5.0 V 0.05 0.04 0.03 0.02 0.01 0 −50 −25 0 25 50 75 100 125 VIN, (V) TJ, JUNCTION TEMPERATURE (°C) Figure 4. On Resistance vs. Input Voltage Figure 5. On Resistance Variation with Temperature RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 2. VDROP vs. IL @ VIN = 2.5 V 1.7 1.5 IL = 1.0 A VON/OFF = 1.5 to 8.0 V VIN = 5.0 V 1.3 1.1 VIN = 1.8 V 0.9 0.7 −50 −25 0 25 50 75 100 125 150 TJ, TEMPERATURE JUNCTION (°C) Figure 6. Normalized On Resistance Variation with Temperature www.onsemi.com 3 150 NTGD1100L TYPICAL CHARACTERISTICS 60 60 IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 45 40 35 30 tf 25 20 tr 15 10 5 0 55 50 td(off) TIME (S) TIME (S) 55 50 1 2 3 4 5 45 40 35 30 tf 25 20 15 10 td(on) 0 td(off) IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F 6 7 5 0 8 tr td(on) 0 1 2 3 R2 (k) 7 8 30 35 tf 25 30 tr tf 25 20 td(off) IL = 1.0 A VON/OFF = 1.5 V C1 = 10 F C0 = 1.0 F 15 10 TIME (S) TIME (S) 6 Figure 8. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 40 td(on) 20 td(off) 15 IL = 1.0 A VON/OFF = 3.0 V C1 = 10 F C0 = 1.0 F 10 tr 5 5 0 1 2 3 4 5 6 7 0 8 td(on) 0 1 2 3 4 5 6 7 8 R2 (k) R2 (k) Figure 9. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW RJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 5 R2 (k) Figure 7. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW 0 4 Figure 10. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1E−03 Single Pulse 0.01 1E−02 1E−01 1E+00 1E+01 1E+02 SQUARE WAVE PULSE DURATION TIME, t (sec) Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad) www.onsemi.com 4 1E+03 NTGD1100L PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D H 6 E1 5 ÉÉÉ 1 2 L2 4 GAUGE PLANE E 3 NOTE 5 L b C DETAIL Z e 0.05 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2 RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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