NTGD3148N

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features • • • • • Low Threshold Levels, VGS(th) < 1.5 V Low Gate Charge (3.8 nC) Leading Edge Trench Technology of Low RDS(on) High Power and Current Handling Capability This is a Pb-Free Device http://onsemi.com N-CHANNEL MOSFET V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ID Max 3.5 A Applications • DC-DC Converters (Buck and Boost Circuits) • Low Side Load Switch • Optimized for Battery and Load Management Applications in • Portable Equipment Like Cell Phones, DSCs, Media Player, Etc Battery Charging and Protection Circuits G Value 20 ±12 3.0 2.2 ID PD 3.5 0.9 1.1 tp = 10 ms IDM TJ, TSTG IS TL 10 -50 to 150 0.8 260 A °C A °C A 1 W TSOP-6 CASE 318G STYLE 13 Unit V V A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C t≤5 s Steady State t≤5 s TA = 25°C TA = 25°C Symbol VDSS VGS ID S N-CHANNEL MOSFET MARKING DIAGRAM DN MG G 1 Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DN = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 1) Junction-to-Ambient – t ≤ 5 s (Note 1) Symbol RqJA RqJA Value 140 110 Unit °C/W °C/W D2 S1 D1 4 5 6 PIN CONNECTION 3 G2 2 S2 1 G1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 1 April, 2008 - Rev. 0 Publication Order Number: NTGD3148N/D NTGD3148N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 4.5 V VGS = 2.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.8 A VGS = 0 V ID = 0.8 A TJ = 25°C TJ = 125°C 0.71 0.57 9.0 5.0 4.0 2.5 nC ns V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 10 V, ID = 3.5 A, RG = 3.0 W 7.4 11.2 12.8 1.6 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 10 V, ID = 3.5 A 300 VGS = 0 V, f = 1.0 MHz, VDS = 10 V 73 44 3.8 0.3 0.7 1.1 2.8 W nC pF ID = 3.5 A ID = 2.8 A VGS = VDS, ID = 250 mA 0.5 3.28 41.7 58 6.2 70 100 1.5 V mV/°C mW S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Ref to 25°C VGS = 0 V, VDS = 16 V TJ = 25°C TJ = 125°C 20 12.5 1.0 10 100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = ±12 V VDS = 5.0 V, ID = 3.5 A 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTGD3148NT1G Package TSOP-6 (Pb-Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTGD3148N 5 6 ID, DRAIN CURRENT (A) 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1.6 V 2.4 V - 3.0 V 2.2 V 4.5 V 1.8 V VGS = 2.0 V ID, DRAIN CURRENT (A) 4 VDS ≥ 10 V 3 TJ = 125°C 2 TJ = 25°C 1 TJ = -55°C 0 0 0.5 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V) 1.4 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 Figure 2. Transfer Characteristics 0.38 0.34 0.3 0.26 0.22 0.18 0.14 0.1 0.06 0.02 1 2 3 4 VGS, GATE VOLTAGE (V) ID = 3.5 A TJ = 25°C TJ = 25°C VGS = 2.5 V VGS = 4.5 V 0.04 0.03 0.02 0.01 0 2 3 4 5 ID, DRAIN CURRENT (A) 6 7 5 6 Figure 3. On-Resistance vs. Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) ID = 3.5 A VGS = 4.5 V 10000 TJ = 125°C IDSS, LEAKAGE (nA) 1000 TJ = 150°C 100 10 2 7 12 17 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation vs. Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTGD3148N VGS GATE-TO-SOURCE VOLTAGE (V) , 400 350 C, CAPACITANCE (pF) 300 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Crss VGS = 0 V Ciss TJ = 25°C 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) ID = 3.5 A TJ = 25°C Q1 Q2 QT Figure 7. Capacitance Variation 100 VDD = 10 V ID = 3.5 A VGS = 4.5 V t, TIME (ns) 3 IS, SOURCE CURRENT (A) td(off) 2.5 2 1.5 1 0.5 0 10 RG, GATE RESISTANCE (W) 100 0 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C tr 10 td(on) 1 1 tf 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTGD3148N PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - 6 5 1 2 4 HE E 3 b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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