NTGD3149CT1G

NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS N−Ch 20 V P−Ch −20 V RDS(on) MAX 60 mW @ 4.5 V 90 mW @ 2.5 V 110 mW @ 4.5 V 145 mW @ 2.5 V ID MAX (Note 1) 3.5 A Applications −2.7 A • DC−DC Conversion Circuits • Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage N−Channel Continuous Drain Current (Note 1) P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current (N−Ch & P−Ch) TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C tp = 10 ms PD IDM TJ, TSTG IS TL ID Steady State t≤5s Steady State t≤5s Steady State t≤5s N−Ch P−Ch Symbol VDSS VGS ID Value 20 ±8 3.2 2.3 3.5 2.4 1.7 2.7 0.9 1.1 11 8.0 −55 to 150 0.8 260 °C A °C A W A Unit V V A D1 S2 G1 S1 N−CHANNEL MOSFET G2 D2 P−CHANNEL MOSFET MARKING DIAGRAM 1 TSOP−6 CASE 318G STYLE 13 CC MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) CC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION Symbol RqJA RqJA Value 140 110 Unit °C/W °C/W THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – t ≤ 5 s (Note 1) G1 S2 G2 1 2 3 6 D1 5 S1 4 D2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 0 1 Publication Order Number: NTGD3149C/D NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS N P N P N P N P Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On Resistance VGS(TH) RDS(on) N P N P N P N P Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain “Miller” Charge Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain “Miller” Charge CISS COSS CRSS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD P VGS = −4.5 V, VDS = −10 V, ID = −1.0 A RG = 6 W N VGS = 4.5 V, VDS = 10 V, ID = 2.0 A RG = 6 W P N f = 1 MHz, VGS = 0 V VDS = −10 V VDS = 10 V 387 73 43 509 76 40 4.6 0.3 0.7 1.2 5.2 0.4 1.0 1.2 5.5 nC 5.5 pF gFS N P VGS = VDS ID = 250 mA ID = −250 mA 0.4 −0.4 41 83 51 104 67 143 4.7 5.1 1.0 −1.0 60 110 90 145 150 220 S mW V IGSS N P VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = −16 V TJ = 25 °C TJ = 85 °C VGS = 0 V ID = 250 mA ID = −250 mA 20 −20 1.1 1.1 1.0 −1.0 10 −10 ±100 ±100 nA mA mV/°C V Symbol N/P Test Conditions Min Typ Max Unit VDS = 0 V, VGS = ±8 V VDS = 0 V, VGS = ±8 V VGS = 4.5 V , ID = 3.5 A VGS = −4.5 V , ID = −2.7 A VGS = 2.5 V , ID = 2.9 A VGS = −2.5 V , ID = −2.4 A VGS = 1.8 V , ID = 2.2 A VGS = −1.8 V , ID = −1.9 A VDS = 10 V , ID = 3.5 A VDS = −10 V , ID = −2.7 A http://onsemi.com 2 NTGD3149C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Symbol td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VSD tRR ta tb QRR tRR ta tb QRR P VGS = 0 V, dIS / dt = 100 A/ms N VGS = 0 V, dIS / dt = 100 A/ms N P IS = 0.8 A IS = −0.8 A P VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W N VGS = 4.5 V, VDD = 10 V, ID = 1.0 A, RG = 6.0 W N/P Test Conditions Min Typ 6.5 3.8 16.4 2.4 7.0 5.3 33.3 29.5 0.7 −0.7 7.7 4.5 3.2 1.9 11.4 7.5 3.9 4.7 nC nC ns 1.2 −1.2 ns V Max Unit ns SWITCHING CHARACTERISTICS (Note 3) DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, TJ = 25 °C 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTGD3149CT1G Package TSOP6 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD3149C TYPICAL CHARACTERISTICS (N−CHANNEL) 6.0 ID, DRAIN CURRENT (A) 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 1.4 V 4.5 V 2.2 V 1.8 V 6.0 2.5 V 1.6 V ID, DRAIN CURRENT (A) 2.0 V 5.0 4.0 3.0 TJ = 125°C 2.0 TJ = 25°C 1.0 0 TJ = −55°C 0 0.5 1.0 1.5 2.0 2.5 VDS ≥ 10 V VGS = 1.2 V 2.5 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. Nch On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 1.0 Figure 2. Nch Transfer Characteristics 0.38 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 0.02 1.0 2.0 3.0 4.0 5.0 6.0 ID = 3.5 A T = 25°C TJ = 25°C VGS = 2.5 V VGS = 4.5 V 2.0 3.0 4.0 5.0 6.0 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. Nch On−Resistance vs. Gate Voltage 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 2.0 ID = 3.5 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. Nch On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 100 4.0 6.0 8.0 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Nch On−Resistance Variation with Temperature Figure 6. Nch Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTGD3149C TYPICAL CHARACTERISTICS (N−CHANNEL) VGS, GATE−TO−SOURCE VOLTAGE (V) 600 550 500 C, CAPACITANCE (pF) 450 400 350 300 250 200 150 100 50 0 Coss Crss 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Ciss 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 Q1 Q2 ID = 3.5 A TJ = 25°C 4.0 5.0 VGS = 0 V TJ = 25°C QT QG, TOTAL GATE CHARGE (nC) Figure 7. Nch Capacitance Variation 100 IS, SOURCE CURRENT (A) VDD = 10 V ID = 3.5 A VGS = 4.5 V t, TIME (ns) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Figure 8. Nch Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C td(off) 10 td(on) tr 1.0 tf 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Nch Resistive Switching Time Variation vs. Gate Resistance Figure 10. Nch Diode Forward Voltage vs. Current http://onsemi.com 5 NTGD3149C TYPICAL CHARACTERISTICS (P−CHANNEL) 6.0 −ID, DRAIN CURRENT (A) 5.0 4.0 −1.6 V 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 −1.4 V −1.2 V VGS = −1.0 V 2.5 3.0 −4.5 V −2.5 V −2.0 V 6.0 TJ = 25°C −ID, DRAIN CURRENT (A) −1.8 V 5.0 4.0 3.0 2.0 1.0 0 TJ = −55°C TJ = 25°C TJ = 125°C 0 0.5 1.0 1.5 2.0 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (V) VDS ≥ −10 V −3.0 V −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Pch On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1.0 Figure 12. Pch Transfer Characteristics 0.38 0.34 0.30 0.26 0.22 0.18 0.14 0.10 0.06 0.02 1.0 2.0 3.0 4.0 5.0 6.0 ID = −2.7 A T = 25°C TJ = 25°C VGS = −2.5 V VGS = −4.5 V 2.0 3.0 4.0 5.0 6.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 13. Pch On−Resistance vs. Gate Voltage 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 10 2.0 ID = −2.7 A VGS = −4.5 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 14. Pch On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C TJ = 125°C 100 4.0 6.0 8.0 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. Pch On−Resistance Variation with Temperature Figure 16. Pch Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 NTGD3149C TYPICAL CHARACTERISTICS (P−CHANNEL) −VGS, GATE−TO−SOURCE VOLTAGE (V) 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 VGS = 0 V Ciss TJ = 25°C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 Q1 Q2 ID = 2.7 A TJ = 25°C QT C, CAPACITANCE (pF) Coss Crss 0 2.0 4.0 6.0 8.0 10 12 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 17. Pch Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = −10 V ID = −1 A VGS = −4.5 V t, TIME (ns) 100 td(off) tf tr 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Figure 18. Pch Gate−to−Source Voltage vs. Total Charge VGS = 0 V TJ = 25°C 10 td(on) 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 19. Pch Resistive Switching Time Variation vs. Gate Resistance Figure 20. Pch Diode Forward Voltage vs. Current http://onsemi.com 7 NTGD3149C PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 1 0° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 1 0° HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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