NTGD4167CT1G

NTGD4167C Power MOSFET Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual Features • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) N−Ch 30 V 90 mW @ 4.5 V 2.6 A 125 mW @ 2.5 V 2.2 A 170 mW @ −4.5 V −1.9 A 300 mW @ −2.5 V −1.0 A P−Ch −30 V Applications • DC−DC Conversion Circuits • Load/Power Switching with Level Shift Symbol Parameter Drain−to−Source Voltage Gate−to−Source Voltage (N−Ch & P−Ch) N−Channel Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s TA = 25°C P−Channel Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C Pulsed Drain Current Value Unit VDSS 30 V VGS ±12 V ID 2.6 1.9 A PD MARKING DIAGRAM 1 W 0.9 IDM 8.6 TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS ±0.9 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C P−Ch Operating Junction and Storage Temperature P−CHANNEL MOSFET A −1.9 −1.4 1.1 tp = 10 ms S2 S1 −2.2 t≤5s N−Ch G2 G1 N−CHANNEL MOSFET 2.9 ID D2 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) A TSOP−6 CASE 318G STYLE 13 −6.3 TA M G TA MG G 1 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction−to−Ambient – Steady State (Note 1) RqJA 140 °C/W Junction−to−Ambient – t ≤ 5 s (Note 1) RqJA 110 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 1 1 Publication Order Number: NTGD4167C/D NTGD4167C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS N Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ N 21.4 P 22.2 Max Unit OFF CHARACTERISTICS VGS = 0 V P Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS N VGS = 0 V, VDS = 24 V P VGS = 0 V, VDS = −24 V N VGS = 0 V, VDS = 24 V P VGS = 0 V, VDS = −24 V ID = 250 mA 30 ID = −250 mA −30 V mV/°C 1.0 TJ = 25 °C mA −1.0 10 TJ = 85 °C −10 N VDS = 0 V, VGS = ±12 V ±100 P VDS = 0 V, VGS = ±12 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) N VGS = VDS P Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS ID = 250 mA 0.5 0.9 1.5 ID = −250 mA −0.5 −1.1 −1.5 52 90 N VGS = 4.5 V , ID = 2.6 A VGS = 2.5 V , ID = 2.2 A 67 125 P VGS = −4.5 V , ID = −1.9 A 130 170 VGS = −2.5 V, ID = −1.0 A 202 300 N VDS = 15 V, ID = 2.6 A 2.6 P VDS = −15 V , ID = −1.9 A 2.6 V mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 26 Total Gate Charge QG(TOT) 3.7 Threshold Gate Charge QG(TH) 0.6 Gate−to−Source Gate Charge QGS Gate−to−Drain “Miller” Charge 295 N VDS = 15 V 27 f = 1 MHz, VGS = 0 V P N 48 VDS = −15 V VGS = 4.5 V, VDS = 15 V, ID = 2.0 A 51 QGD 0.8 QG(TOT) 3.9 Threshold Gate Charge QG(TH) VGS = −4.5 V, VDS = −15 V, ID = −2.0 A 5.5 0.9 Total Gate Charge P pF 419 6.0 nC 0.6 Gate−to−Source Gate Charge QGS 1.0 Gate−to−Drain “Miller” Charge QGD 1.0 td(ON) 7.0 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr N VGS = 4.5 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W td(OFF) 4.0 14 tf 2.0 td(ON) 8.0 tr td(OFF) VGS = −4.5 V, VDD = −15 V, ID = −1.0 A, RG = 6.0 W P tf 8.0 22 8.0 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. http://onsemi.com 2 ns NTGD4167C 3. Switching characteristics are independent of operating junction temperatures. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol N/P Test Conditions Min Typ Max Unit IS = 0.9 A 0.7 1.2 V IS = −0.9 A −0.8 −1.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD N P Reverse Recovery Time Charge Time Discharge Time VGS = 0 V, TJ = 25 °C tRR ta tb 8.0 N VGS = 0 V, dIS / dt = 100 A/ms, IS = 0.9 A ns 5.0 3.0 Reverse Recovery Charge QRR 3.0 nC Reverse Recovery Time tRR 12 ns Charge Time ta Discharge Time tb Reverse Recovery Charge P VGS = 0 V, dIS / dt = 100 A/ms, IS = −0.9 A QRR 10 2.0 7.0 http://onsemi.com 3 nC NTGD4167C N−CHANNEL TYPICAL CHARACTERISTICS VGS = 4.5 V 3.5 V 2.5 V 7.0 2.0 V 6.0 5.0 4.0 3.0 2.0 1.5 V 1.0 0 7.0 6.0 5.0 4.0 3.0 −55°C 2.0 125°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 25°C 0.12 ID = 2.6 A 0.10 0.08 0.06 0.04 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS, GATE VOLTAGE (V) 1.75 2 2.25 TJ = 25°C 0.09 0.08 VGS = 2.5 V 0.07 0.06 VGS = 4.5 V 0.05 0.04 0.03 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 400 ID = 2.6 A VGS = 4.5 V C, CAPACITANCE (pF) 350 1.3 1.2 1.1 1.0 0.9 0.8 25 50 75 100 125 8.0 9.0 150 TJ = 25°C VGS = 0 V f = 1 MHz CISS 300 250 200 150 100 COSS 50 0.7 0 7.0 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Temperature 1.6 −25 2.5 0.10 Figure 3. On−Region vs. Gate−To−Source Voltage 0.6 −50 1.5 Figure 2. Transfer Characteristics 0.14 1.4 1.25 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.16 1.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.18 0 1.0 0.0 0.75 Figure 1. On−Region Characteristics 0.02 RDS(on), DRAIN−TO−SOURCE RESISTANCE 25°C 1.0 0.20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS = 5 V 8.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 8.0 9.0 TJ = 25°C ID, DRAIN CURRENT (A) 9.0 0 CRSS 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 30 16 QT 14 4 12 VDS 3 10 VGS 2 8 QGD QGS 6 4 ID = 2.0 A TJ = 25°C VDS = 15 V 1 2 0 0 0 1 10 2 3 IS, SOURCE CURRENT (A) 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) NTGD4167C TJ = 150°C TJ = 25°C 0.1 0.3 4 0.4 0.5 0.6 0.7 0.8 0.9 1.0 QG, TOTAL GATE CHARGE (nC) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 8. Diode Forward Voltage versus Current 1.1 1.1 40 1.2 ID = 250 mA 30 1.0 POWER (W) 0.9 0.8 0.7 20 10 0.6 0.5 0.4 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage Figure 10. Single Pulse Maximum Power Dissipation 100 ID, DRAIN CURRENT (A) VGS(th) (V) 1.0 10 VGS = 12 V Single Pulse TA = 25°C 100 ms 1 ms 1 10 ms 0.1 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 100 1000 NTGD4167C 1 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED Duty Cycle = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 t, TIME (s) Figure 12. FET Thermal Response http://onsemi.com 6 10 100 1000 NTGD4167C P−CHANNEL TYPICAL CHARACTERISTICS 7.0 7.0 VGS = −5.0 V to −3.5 V −3.0 V −ID, DRAIN CURRENT (A) 5.0 −2.5 V 4.0 3.0 2.0 −2.0 V 1.0 0 0 −1.5 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 25°C 0.3 0.25 ID = −1.9 A 0.2 0.15 0.1 0.05 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.0 25°C 125°C 0 0.75 1 1.25 1.5 −55°C 1.75 2 2.25 2.5 2.75 TJ = 25°C 0.45 0.4 0.35 VGS = −2.5 V 0.3 0.25 0.2 VGS = −4.5 V 0.15 0.1 0.05 0 0 1.0 2.0 3.0 4.0 5.0 6.0 −ID, DRAIN CURRENT (A) Figure 15. On−Region vs. Gate−To−Source Voltage Figure 16. On−Resistance vs. Drain Current and Temperature 1.6 550 CISS 450 1.3 1.2 1.1 1.0 0.9 0.8 0.7 400 350 300 250 200 150 100 0 25 50 75 100 125 150 0 COSS CRSS 50 −25 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 17. On−Resistance Variation with Temperature Figure 18. Capacitance Variation http://onsemi.com 7 7.0 TJ = 25°C VGS = 0 V f = 1 MHz 500 ID = −1.9 A VGS = −4.5 V 3 0.5 −VGS, GATE VOLTAGE (V) C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE 2.0 Figure 14. Transfer Characteristics 0.4 0.6 −50 3.0 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.35 1.4 4.0 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.45 1.5 5.0 Figure 13. On−Region Characteristics 0.5 0 1.5 VDS = −5 V 6.0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) −ID, DRAIN CURRENT (A) 6.0 30 NTGD4167C 16 QT 14 4 12 −VGS −VDS 10 3 QGS 8 QGD 2 6 ID = −2.0 A TJ = 25°C VDS = −15 V 1 0 0 1 2 4 2 0 4 3 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V) 5 QG, TOTAL GATE CHARGE (nC) Figure 19. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1.4 10 ID = −250 mA TJ = 150°C 1.2 1.1 −VGS(th) (V) −IS, SOURCE CURRENT (A) 1.3 TJ = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.4 −50 1.2 0 25 50 75 100 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 21. Threshold Voltage 100 −ID, DRAIN CURRENT (A) 30 20 10 0 0.001 −25 Figure 20. Diode Forward Voltage versus Current 40 POWER (W) 1.0 0.01 0.1 1 10 100 10 VGS = −12 V Single Pulse TA = 25°C 1 1 ms 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 1 dc 10 SINGLE PULSE TIME (s) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 22. Single Pulse Maximum Power Dissipation Figure 23. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 8 150 100 ms 0.01 0.1 1000 125 100 NTGD4167C 1 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) Figure 24. FET Thermal Response ORDERING INFORMATION Device NTGD4167CT1G Package Shipping† TSOP6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NTGD4167C PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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